Features
■ Formerly brand
■ Extremely high speed performance
■ Blocks high voltages and currents
■ Two TBU™ protectors in one small package
■ Simple, superior circuit protection
■ Minimal PCB area
■ RoHS compliant*, UL Recognized
Applications
■ POTS linecards
■ VolP equipment
■ Voice and data combo linecards
■ ONU, ONT
■ Gateways
■ Cable and DSL modems
TBU™ P500-G and P850-G Protectors
*RoHS COMPLIANT
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
Transient Blocking Units - TBU™ Devices
Bourns® Model P500-G and P850-G
TBU™ products are high speed, surge
protection components designed to
protect Subscriber Line Interface Circuits
(SLICs) against transients caused by
AC power cross, induction and lightning
surges.
The TBU™ device blocks surges and
provides an effective barrier behind
which sensitive electronics are not
exposed to large voltages or currents
during surge events.
Electrical Characteristics (Tamb = 25 °C)
The P-G series TBU™ devices are bidirectional; specifi cations are valid in both directions.
Symbol Parameter Min. Typ. Max. Unit
Iop Maximum current through the device that will not cause
current blocking
P500-G120-WH
P500-G200-WH
P850-G120-WH
P850-G200-WH
100
200
100
200
mA
Itrigger Typical current for the device to go from normal operating
state to protected state
P500-G120-WH
P500-G200-WH
P850-G120-WH
P850-G200-WH
150
275
150
275
mA
Iout Maximum current through the device
P500-G120-WH
P500-G200-WH
P850-G120-WH
P850-G200-WH
200
400
200
400
mA
RTBU Series resistance of the TBU™ device 50 55 Ω
Rbal Line-to line series resistance difference between two TBU™ devices 2 Ω
tblock Maximum time for the device to go from normal operating
state to protected state 1µs
Iquiescent Current through the triggered TBU™ device with 50 Vdc circuit
voltage 0.7 mA
Vreset Voltage below which the triggered TBU™ device will transition to
normal operating state 22 V
Absolute Maximum Ratings (Tamb = 25 °C)
Symbol Parameter Value Unit
Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec P500-Gxxx-WH
P850-Gxxx-WH
500
850 V
Vrms Maximum protection voltage for continuous Vrms faults P500-Gxxx-WH
P850-Gxxx-WH
300
425 V
Top Operating temperature range -40 to +85 °C
Tstg Storage temperature range -65 to +150 °C
Agency Approval
UL recognized component File # E315805.
Industry Standards
Description Model
Telcordia GR-1089 Port Type 2, 4 P500-G
Port Type 3, 5 P850-G
ITU-T K.20, K.20E, K.21, K.21E, K.45 P850-G
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
Typical Performance Characteristics
TBU™ P500-G and P850-G Protectors
V-I Characteristics Time to Block vs. Fault Current
Trigger Current Temperature
-Itrigger
Vreset
-Vreset
Itrigger
+V
+I
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
0.1 1 10 100 1000
Fault Current (A)
Time to Block (sec)
20
40
60
80
100
120
140
-40 -20 0 20 40 60 80
Temperature (°C)
% of Trigger Current
TBU™ P500-G and P850-G Protectors
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
Operational Characteristics
P500-G Lightning, 500 V P850-G Lightning, 850 V
The graphs below demonstrate the operational characteristics of the TBU™ device. For each graph the fault voltage, protected side voltage,
and current is presented.
P500-G Power Fault, 120 Vrms, 25 A P850-G Power Fault, 230 Vrms, 25 A
Pxxx-G
Equipment
V1 V2
Tip
Ring
TEST CONFIGURATION DIAGRAM
1 µs/div.
100 V/div.
400 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
3
2
1
µ
s/div.
200 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
3
2
4 ms/div.
100 V/div.
200 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
2
3
4 ms/div.
100 V/div.
200 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
2
3
6&6A 4&4A
1&1A 3&3A
64
13
PIN 1
A
B
D
C
4 64A 6A5
3 13A 1A2
EE
JJ
N
N
HH
M
GG
K
F
K
LL
TOP VIEW SIDE VIEW BOTTOM VIEW
PIN 1
A
B
D
C
4
3
6
1
5
2
E
JJ
N
N
H
M
E
K
K
F
TOP VIEW SIDE VIEW BOTTOM VIEW
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
TBU™ P500-G and P850-G Protectors
Product Dimensions
DIMENSIONS: MM
(INCHES)
Dim. P500-G P850-G
Min. Typ. Max. Min. Typ. Max.
A 3.40
(.139)
4.00
(.157)
4.10
(.161)
3.40
(.139)
4.00
(.157)
4.10
(.161)
B5.90
(.232)
6.00
(.236)
6.10
(.240)
8.15
(.321)
8.25
(.325)
8.35
(.329)
C0.80
(.031)
0.85
(.033)
0.90
(.035)
0.80
(.031)
0.85
(.033)
0.90
(.035)
D0.000
(.000)
0.025
(.001)
0.050
(.002)
0.000
(.000)
0.025
(.001)
0.050
(.002)
E1.15
(.045)
1.25
(.049)
1.35
(.053)
1.15
(.045)
1.25
(.049)
1.35
(.053)
F1.05
(.041)
1.15
(.045)
1.25
(.049)
1.05
(.041)
1.15
(.045)
1.25
(.049)
G-- -- --
0.725
(.029)
0.825
(.032)
0.925
(.036)
H1.10
(.043)
1.20
(.047)
1.30
(.051)
1.10
(.043)
1.20
(.047)
1.30
(.051)
J0.375
(.015)
0.425
(.017)
0.475
(.019)
0.375
(.015)
0.425
(.017)
0.475
(.019)
K0.70
(.028)
0.75
(.030)
0.80
(.031)
0.25
(.010)
0.30
(.012)
0.35
(.014)
L-- ----
0.70
(.028)
0.75
(.030)
0.80
(.031)
M0.70
(.028)
0.75
(.030)
0.80
(.031)
0.70
(.028)
0.75
(.030)
0.80
(.031)
N0.375
(.015)
0.425
(.017)
0.475
(.018)
0.375
(.015)
0.425
(.017)
0.475
(.018)
Recommended Pad Layout
Pad # Apply
1 Tip In
2NC
3 Tip Out
4 Ring Out
5NC
6 Ring In
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
Pad Designation
TBU™ devices have matte-tin termination fi nish. Suggested layout should use non-solder mask
defi ne (NSMD). Recommended stencil thickness is 0.10-0.12 mm (.004-.005 in.) with stencil
opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power
device, it is recommended that, wherever possible, extra PCB copper area is allowed. For mini-
mum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the
pads of the device.
P500-Gxxx
P850-Gxxx
Pads 1A and 1 are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6.
This allows for one PCB layout to accommodate the P500 or P850.
P500-Gxxx
P850-Gxxx
1.225
(.048)
0.75
(.030)
1.15
(.045)
1.275
(.050)
0.375
(.015)
1.225
(.048)
1.25
(.049)
0.85
(.033)
0.30
(.012)
0.75
(.030)
1.15
(.045)
0.375
(.015)
Pad # Apply Pad # Apply
1A Tip In 4A Ring Out
1 Tip In 4 Ring Out
2NC5NC
3 Tip Out 6 Ring In
3A Tip Out 6A Ring In
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
Pad Designation
Block Diagram
P500-Gxxx
P850-Gxxx
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
TBU™ P500-G and P850-G Protectors
Thermal Resistances
Part # Symbol Parameter Value Unit
P500-G Rth(j-a)
Junction to leads (package) 113 °C/W
Junction to leads (per TBU™ device) 236 °C/W
P850-G Rth(j-a) Junction to leads (package) 119 °C/W
Junction to leads (per TBU™ device) 215 °C/W
Refl ow Profi le
Profi le Feature Pb-Free Assembly
Average Ramp-Up Rate (Tsmax to Tp) 3 °C/sec. max.
Preheat
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (tsmin to tsmax)
150 °C
200 °C
60-180 sec.
Time maintained above:
- Temperature (TL)
- Time (tL)
217 °C
60-150 sec.
Peak/Classifi cation Temperature (Tp) 260 °C
Time within 5 °C of Actual Peak Temp. (tp) 20-40 sec.
Ramp-Down Rate 6 °C/sec. max.
Time 25 °C to Peak Temperature 8 min. max.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
3312 - 2 mm SMD Trimming Potentiometer
TBU™ P500-G and P850-G Protectors
Typical Part MarkingHow to Order
P 500 - G 120 - WH __
Form Factor
P = Two TBU™ protectors in one device
Impulse Voltage Rating
500 = 500 V
850 = 850 V
Directional Indication for Paired Devices
G = Bidirectional
Iop Indicator
120 = 100 mA
200 = 200 mA
Packaging Indicator
Blank = Packaged in tape and reel (3000 pieces per reel)
X = Packaged in tubes
Packaging Specifi cations (per EIA468-B)
B
A
DC
NF
G (MEASURED AT HUB)
USER DIRECTION OF FEED
K0
B0
P2
D1
CENTER
LINES OF
CAVITY
EMBOSSMENT
tD
P0
TOP
COVER
TAPE
E
W
P
A0
DIMENSIONS: MM
(INCHES)
Device A B C D G N
Min. Max. Min. Max. Min. Max. Min. Max. Ref. Ref.
P500-G, P850-G 326
(12.835) 330.25
(13.002) 1.5
(.059) 2.5
(.098) 12.8
(.504) 13.5
(.531) 20.2
(.795) - 16.5
(.650) 102
(4.016)
Device A0 B
0 D D1 E F
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. max.
P500-G 4.2
(.165) 4.4
(.173) 6.2
(.244) 6.4
(.252) 1.5
(.059) 1.6
(.063) 1.5
(.059) -1.65
(.065) 1.85
(.073) 5.4
(.213) 5.6
(.220)
P850-G 4.2
(.165) 4.4
(.173) 8.45
(.333) 8.65
(.341) 1.5
(.059) 1.6
(.063) 1.5
(.059) -1.65
(.065) 1.85
(.073) 7.4
(.291) 7.6
(.299)
Device K0P P0 P
2 t W
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
P500-G 1.0
(.039) 1.2
(.047) 7.9
(.311) 8.1
(.319) 3.9
(.159) 4.1
(.161) 1.9
(.075) 2.1
(.083) 0.25
(.010) 0.35
(.014) 11.7
(.461) 12.3
(.484)
P850-G 1.1
(.043) 1.3
(.051) 7.9
(.311) 8.1
(.319) 3.9
(.159) 4.1
(.161) 1.9
(.075) 2.1
(.083) 0.25
(.010) 0.35
(.014) 15.7
(.618) 16.3
(.642)
MARKING NUMBER
50GA = P500-G120-WH
50GB = P500-G200-WH
85GA = P850-G120-WH
85GB = P850-G200-WH
MANUFACTURING
DATE CODE
MANUFACTURER’S
TRADEMARK*
PIN 1
*TRANSITION FROM FULTEC TRADEMARK
TO BOURNS TRADEMARK IN 2009.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications
3312 - 2 mm SMD Trimming Potentiometer
500 ns/div.
100 V/div.
400 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
3
2
500 ns/div.
100 V/div.
400 mA/div.
Ch1 V1 Ch2 V2 Ch3 Current
1
3
2
Pxxx-G
-VREF
Equipment
MOVs
or
GDTs
V1 V2
TBU™ P500-G and P850-G Protectors
Reference Designs
A cost-effective protection solution combines the Bourns® TBU™ protection device with a pair of MOVs or Bourns® GDTs and a diode
bridge. The diagram below illustrates a common confi guration of these components. The graphs to the right demonstrate the
operational characteristics of the circuit.
Common Confi guration Diagram
P500-G Solution: 5000 V Lightning 2/10 µsec, 500 A
Asia-Pacifi c: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
COPYRIGHT©2008, BOURNS, INC. LITHO IN U.S.A. e 12/08 FU0801
REV. 12/08
P850-G Solution: 4000 V Lightning 10/700 µsec, 100 A
P500-G Confi guration (GR-1089 Intra-building and 5 kV Lightning)
Product Qty. Part Number Source
TBU™ Device 1 P500-Gxxx-WH Bourns, Inc.
MOV 2 CNR-10D201K
GNR10D201K CNR Centra Science
Ceramate Technical
Diode bridge 2 GSD2004S-V
MMBD2004S Vishay
Diodes Inc.
P850-G Confi guration (ITU-T K.20, K.21, K.20E, K.21E, K.45)
Product Qty. Part Number Source
TBU™ Device 1 P850-G120-WH Bourns, Inc.
MOV 2 CNR-10D361K
GNR10D361K CNR Centra Science
Ceramate Technical
Diode bridge 2 GSD2004S-V
MMBD2004S Vishay
Diodes Inc.
