TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
BUZ905DP
BUZ906DP
VDSX Drain – Source Voltage
VGSS Gate – Source Voltage
IDContinuous Drain Current
ID(PK) Body Drain Diode
PDTotal Power Dissipation @ Tcase = 25°C
Tstg Storage Temperature Range
TjMaximum Operating Junction Temperature
RθJC Thermal Resistance Junction – Case
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
123
0.6
2.8
5.020.0
5.45
5.45
1.2
2.0
3.4
2.0 1.0
3.3 Dia.
P–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905DP
-160V BUZ906DP
-200V
TO–3PBL
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
Case is Source
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
BUZ905DP
BUZ906DP
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSX Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
VGS(OFF) Gate – Source Cut–Off Voltage
VDS(SAT)* Drain – Source Saturation Voltage
IDSX Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
-160
-200
±14
-0.1 -1.5
-12
-10
-10
1.4 4
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤2%.
VGS = 10V BUZ905DP
ID= -10mA BUZ906DP
VDS = 0 IG= ±100µA
VDS = -10V ID= -100mA
VGD = 0 ID= -16A
VDS = -160V
BUZ905DP
VGS = 10V VDS = -200V
BUZ906DP
VDS = -10V ID= -3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
ton Turn–on Time
toff Turn-off Time
1900
900
60
150
110
VDS = 10V
f = 1MHz
VDS = 20V
ID= 7A
pF
ns
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
50
100
150
200
250
300
0025 50 75 100 125 150
T — CASE TEMPERATURE (˚C)
C
CHANNEL DISSIPATION (W)
Derating Chart
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 2/95
BUZ905DP
BUZ906DP
I = -14A
D
I = -5A
D
-1 -2 -3 -4 -5 -6 -7 -8 -9
0
-2
-4
-6
-8
-10
-12
-14
-16
V — GATE – SOURCE VOLTAGE (V)
GS
V — DRAIN – SOURCE VOLTAGE (V)
DS
T = 25˚C
C
I = -9A
D
D
I = -3A
I — DRAIN CURRENT (A)
D
V — GATE – SOURCE VOLTAGE (V)
GS
0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
T = 25˚C
C
V = -10V
DS
T = 100˚C
C
T = 75˚C
C
P
=
2
5
0
W
C
H
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
0
-10 -20 -30 -40 -50 -60 -70
-22
-2
-4
-6
8
-10
-12
-14
-16
-18
-20
0
-
T = 25˚C
C
-4V
-3V
-2V
-1V
-7V
-6V
-5V
Typical Transfer Characteristics
Typical Output Characteristics
P
=
2
5
0
W
C
H
I — DRAIN CURRENT (A)
D
V — DRAIN – SOURCE VOLTAGE (V)
DS
0
-10 -20 -30 -40 -50 -60 -70
-22
-2
-4
-6
8
-10
-12
-14
-16
-18
-20
0
-
-4V
-3V
-2V
-1V
-7V
-6V
-5V
T = 75˚C
C
Typical Output Characteristics
Drain – Source Voltage
vs
Gate – Source Voltage
-200V
-160V
V — DRAIN – SOURCE VOLTAGE (V)
DS
-1 -10 -100 -1000
I — DRAIN CURRENT (A)
D
-0.1
-1
-10
-100
T = 25˚C
C
D
C
O
P
E
R
ATIO
N
BUZ905D BUZ906D
Forward Bias Safe Operating Area
G — TRANSCONDUCTANCE (S)
FS
I — DRAIN CURRENT (A)
D
T = 25˚C
C
T = 75˚C
C
0 2 4 6 8 10 12 14 16
0.1
1
10
100
V = 20V
DS
Transconductance
