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Integrated Silicon Solution, Inc. — www.issi.com 1
Rev. E1
11/1/2016
IS62WV5128ALL
IS62WV5128BLL
®Long-term Support
World Class Quality
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speedaccesstime:55ns,70ns
• CMOSlowpoweroperation
36 mW (typical) operating
9µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply
1.65V–2.2VVdd (IS62WV5128ALL)
2.5V–3.6VVdd (IS62WV5128BLL)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Industrialtemperatureavailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS62WV5128ALL/IS62WV5128BLLarehigh-
speed,4MbitstaticRAMsorganizedas512Kwordsby
8 bits. It is fabricated using ISSI's high-performance
CMOStechnology.Thishighlyreliableprocess coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) the device assumes
a standby mode at which the power dissipation can be
reduceddownwithCMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs.TheactiveLOWWriteEnable
(WE) controls both writing and reading of the memory.
TheIS62WV5128ALLandIS62WV5128BLLarepackaged
in the JEDEC standard 32-pinTSOP (TYPE I), 32-pin
sTSOP(TYPEI),32-pinTSOP(TypeII),32-pinSOPand
36-pinminiBGA.
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 2016
A0-A18
CS1
OE
WE
512K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7