BFP420FE6327 - Infineon Technologies

2005-11-11

BFP420F

NPN Silicon RF Transistor*

• For high gain low noise amplifiers

• Smallest Package 1.4 x 0.8 x 0.59 mm

• Noise figure F = 1.1 dB at 1.8 GHz

outstanding Gms = 20 dB at 1.8 GHz

• Transition frequency fT = 25 GHz

• Gold metallization for high reliability

• SIEGET  25 GHz fT - Line

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP420F AMs 1=B 2=E 3=C 4=E - - TSFP-4

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

TA > 0 °C

≤ 0 °C

VCEO

4.5

4.1

Collector-emitter voltage VCES 15

Collector-base voltage VCBO 15

Emitter-base voltage VEBO 1.5

Collector current IC35 mA

Base current IB3

Total power dissipation1)

TS ≤ 111 °C Ptot 160 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature Tst

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point2) RthJS ≤ 240 K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

2005-11-11

BFP420F

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V

Collector-emitter cutoff current

VCE = 15 V, VBE = 0 ICES - - 10 µA

Collector-base cutoff current

VCB = 5 V, IE = 0 ICBO - - 100 nA

Emitter-base cutoff current

VEB = 0.5 V, IC = 0 IEBO - - 10 µA

DC current gain

IC = 5 mA, VCE = 4 V, pulse measured hFE 60 95 130 -

2005-11-11

BFP420F

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 2 GHz fT18 25 - GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.15 0.3 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.33 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 0.5 -

Noise figure

IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt

F- 1.1 - dB

Power gain, maximum available1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt,

f = 1.8 GHz

Gma - 19.5 -

Insertion power gain

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 Ω

|S21|2- 16.5 - dB

Third order intercept point at output2)

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 Ω

IP3- 24 - dBm

1dB Compression point at output

IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,

f = 1.8 GHz

P-1dB - 10.5 -

1Gma = |S21e / S12e| (k-(k²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

2005-11-11

BFP420F

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transitor Chip Data:

IS = 0.20045 fA

VAF = 28.383 V

NE = 2.0518 -

VAR = 19.705 V

NC = 1.1724 -

RBM = 3.4849 Ω

CJE = 1.8063 fF

TF = 6.7661 ps

ITF = 1mA

VJC = 0.81969 V

TR = 2.3249 ns

MJS = 0-

XTI = 3-

NF = 1.2432 -

ISE = 19.049 fA

NR = 1.3325 -

ISC = 0.019237 fA

IRB = 0.72983 mA

RC = 0.10105 Ω

MJE = 0.46576 -

VTF = 0.23794 V

CJC = 234.53 fF

XCJC = 0.3 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

BF = 72.534 -

IKF = 0.48731 A

BR = 7.8287 -

IKR = 0.69141 A

RB = 8.5757 Ω

RE = 0.31111 -

VJE = 0.8051 V

XTF = 0.42199 -

PTF = 0 deg

MJC = 0.30232 -

CJS = 0 F

XTB = 0 -

FC = 0.73234

C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10 Ω

All parameters are ready to use, no scalling is necessary.

Package Equivalent Circuit: LBO = 0.22 nH

LEO = 0.28 nH

LCO = 0.22 nH

LBI= 0.42 nH

LEI = 0.26 nH

LCI = 0.35 nH

CBE =34 fF

CBC = 2fF

CCE = 33 fF

KBO-EO=0.1 -

KBO-CO=0.01 -

KEO-CO=0.11 -

KCI-EI=-0.05 -

KBI-CI= -0.08 -

KBI-EI= 0.2 -

RLBI = 0.15 Ω

RLEI = 0.11 Ω

I = 0.13 Ω

EHA07389

LBI

LEO

LCO

Transistor

C'-E'-

Diode

C'B'

Chip

Valid up to 6GHz

The TSFP-4 package has two emitter leads. To avoid high

complexity fo the package equivalent circuit, both leads are

combined in one electrical connection.

RLXI are series resistors for the inductances LXI and Kxa-by are the

coupling coefficients between the inductances Lax and Lyb. The

referencepin for the couple ports are B, E, C, B`, E`, C

For examples and ready to use parameters please contact

your local Infineon Technologies distributor or sales office to

obtain a InfineonTechnologies CD-ROM or see Internet:

http//www.infineon.com/silicondiscretes

2005-11-11

BFP420F

For non-linear simulation:

· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

· If you need simulation of the reverse characteristics, add the diode with the

C'-E'- diode data between collector and emitter.

· Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

· This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

· Higher gain because of lower emitter inductance.

· Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

2005-11-11

BFP420F

Package TSFP-4

Package Outline

Foot Print

Marking Layout

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

Manufacturer

Type code BFP420F

Example

Pin 1

0.35

0.45

0.9

0.5 0.5

40.2

1.55 0.7

1.4

Pin 1

±0.05

0.2

±0.05

1.4

10˚ MAX.

±0.05

0.8

1.2

±0.05

±0.04

0.55

±0.05

0.2

±0.05

0.15

±0.05

0.2

0.5

±0.05

0.5

±0.05

2005-11-11

BFP420F

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München

Attention please!

The information herein is given to describe certain components and shall not be

considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of

non-infringement, regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.Infineon.com).

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Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon

Technologies Office.

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device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.