IPM-R3 series 600V / 150A 7 in one-package
7MBP150RTB060
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
Bus voltage
(between terminal P and N)
Collector-Emitter voltage
Collector current DC
1ms
Duty=68.2%
Collector power dissipation One transistor
Collector current DC
1ms
Forward Current of Diode
Collector power dissipation One transistor
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES *1
IC
ICP
-IC *2
PC *3
IC
ICP
IF
PC *3
VCC *4
Vin *5
Iin
VALM *6
IALM *7
Tj
Top
Tstg
Viso *8
Item
0
0
200
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
450
500
400
600
150
300
150
431
50
100
50
198
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2.5
3.5 *9
3.5 *9
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
kV
N·m
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,
N and U or V or W or DB.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6)x100=68.2%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
Fig.1 Measurement of case temperature
DC
Surge
Shortoperating
Item Symbol Min. Typ. Max. Unit
Weight
Weight Wt - 450 - g
*9 : (For 1 device, Case is under the device)
Inverter
Brake
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7MBP150RTB060 IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Limiting resistor for alarm
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Iccp
ICCN
Vin(th)
VZ
tALM
RALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
18
65
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
ton VDC=300V,Tj=125°C
toff IC=150A Fig.1, Fig.6
trr VDC=300V, IC=150A Fig.1, Fig.6
PAV Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Thermal characteristics( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- - 0.29
- - 0.47
- - 0.63
- 0.05 -
°C/W
°C/W
°C/W
°C/W
INV IGBT
FWD
Brake IGBT
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
VDC
VCC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Level of brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=600V Vin terminal open.
Ic=150A
Ic=150A
VCE=600V Vin terminal open.
Ic=50A
-Ic=50A
- - 1.0 mA
- - 2.3 V
- 1.8 -
- - 2.6 V
- 1.6 -
- - 1.0 mA
- - 2.2 V
- 1.75 -
- - 3.3 V
- 1.9 - V
1.2 - - µs
- - 3.6
- - 0.3
170 - - mJ
Terminal
Chip
Terminal
Chip
Terminal
Chip
Terminal
Chip
IOC
tDOC
tSC
TjOH
TjH
TCOH
TCH
VUV
VH
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
surface of IGBT chips
VDC=0V, Ic=0A, Case temperature
225 - - A
75 - -
-5-
--8
150 - -
-20 -
110 - 125
-20 -
1 1 .0 - 12.5
0.2 0.5 -
A
µs
µs
°C
°C
°C
V
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0 - -
±5.0 - -
Item Symbol Condition Min. Typ. Max. Unit
Item Condition Min. Typ. Max. Unit
kV
kV
- - 400 V
13.5 15.0 16.5 V
2.5 - 3.0 Nm
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Inverter
Brake
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7MBP150RTB060 IGBT-IPM
Vin
Ic
Vin(th) Vin(th)
ton toff
trr
on
90%
50%
90% 10%
Figure 1. Switching Time Waveform Definitions
/Vin
Vge (Inside IPM)
Fault (Inside IPM)
/ALM
on on
off off
Gate on Gate off
normal
alarm
tALM>Max. tALM>Max. tALM 2ms(typ.)
Fault : Over-current, Over-heat or Under-voltage
Figure 2. Input / Output Timing Diagram
Ic
IALM IALM IALM
Ic Ic
tsc
Figure. 4 Definition of tsc
DC
15V
DC
15V
VccU
VinU
GNDU
20k
20k
Vcc
VinX
GND
P
U
V
W
N
CT
AC200V
Noise
4700p
Cooling
Fin
Earth
+
Sw1
Sw2
Figure 5. Noise Test Circuit
Vcc
20k
Vin
GND
P
IPM L DC
300V
Ic
N
+
DC
15V
HCPL-
4504
Icc Vcc P
I PM U
DC Vin
15V V
P.G W
+8V fsw GND
N
Figure 6. Switching Characteristics Test Circuit
Figure 7. Icc Test Circuit
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7MBP150RTB060 IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 450g
VccU 3
VinU 2
GNDU 1
VccV 6
VinV 5
GNDV 4
VccW 9
VinW 8
GNDW 7
Vcc 11
VinX 13
GND 10
VinY 14
VinZ 15
12
ALM 16
P
U
V
W
B
NPre-driver include following functions
1 Amplifier for drive
2 Short circui t protection
3 Under voltage lockout ci rcuit
4 Over current protection
5 IGBT chip over heating protection
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-DriverPre-Driver
Pre-Driver
RALM
1.5k
Over heating protection
circuit
Pre-Driver
VinDB
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IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
7MBP150RTB060
Power supply current vs. Switching frequency
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
Power supply current Icc (mA)
Input signal threshold voltage
Vin (ON), Vin (OFF), (V)
Input signal threshold voltage
vs. Power supply voltage
14
12
10
8
6
4
2
0
Under voltage VUVT (V)
Under voltage vs. Junction temperature
Undervoltage hysterisis VH (V)
Under voltage hysterisis vs. Junction temperature
Alarm hold time tALM (msec.)
Alarm hold time vs. Power supply voltage
Overheating protection TCOH,TjOH (°C)
OH hysterisis TCH,TjH (°C)
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
Tc=125°C
20 40 60 80 100 120 140
Junction temperature Tj (°C)
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
N-side
P-side
·········
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0
1.0
0.8
0.6
0.4
0.2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
200
150
100
50
0
·········
20 40 60 80 100 120 140
Junction temperature Tj (°C)
12 13 14 15 16 17 18
Power supply voltage Vcc (V)
0 5 10 15 20 25
Switching frequency fsw (kHz)
Tj=25°C
Tj=125°C
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7MBP150RTB060 IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Forward current vs. Forward voltage
(Chip)
Forward current IF (A)
300
250
200
150
100
50
0
Tj=25°C(Chip)
240
200
160
120
80
40
0
Tj=25°C(Terminal)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Tj=125°C(Chip)
Collector current vs. Collector-Emitter voltage
Collector current Ic (A)
Tj=125°C(Terminal)
Forward current vs. Forward voltage
(Terminal)
Forward current IF (A)
0 0.5 1 1.5 2 2.5
Foeward voltage VF (V)
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE (V)
240
200
160
120
80
40
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE (V)
240
200
160
120
80
40
0
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE (V)
0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage VCE (V)
240
200
160
120
80
40
0
0 0.5 1 1.5 2 2.5
Foeward voltage VF (V)
300
250
200
150
100
50
0
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7MBP150RTB060 IGBT-IPM
Transient thermal resistance
1
0.1
0.01
Thermal resistance Rth(j-c) (°C/W)
Reverse biased safe operating area
Collector current Ic (A)
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
Collector power dissipation Pc (W)
Power derating for FWD (per device)
Collector power dissipation Pc (W)
0 100 200 300 400 500 600 700
Collector-Emitter voltage VCE (V)
400
300
200
100
0
<
=
Vcc=15V, Tj 125°C
Power derating for IGBT (per device)
Switching loss Eon,Eoff, Err (mJ/cycle)
16
14
12
10
8
6
4
2
0
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
Switching loss Eon,Eoff, Err (mJ/cycle)
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
300
250
200
150
100
50
0
500
400
300
200
100
0
25
20
15
10
5
0
0 60 120 180 240
Collector current IC (A)
0 60 120 180 240
Collector current IC (A)
0.001 0.01 0.1 1
Pulse width Pw (sec.)
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
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7MBP150RTB060 IGBT-IPM
0 50 100 150 200 250
Collector current Ic (A)
Switching time ton,toff,tf (nsec.)
10000
1000
100
10
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
Reverse recovery current Irr (A)
Reverse recovery time trr (nsec.)
Reverse recovery characteristics
trr, Irr, vs. IF
100
10
1 0 50 100 150 200 250
Foeward current IF (A)
Switching time ton,toff,tf (nsec.)
10000
1000
100
10
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
0 50 100 150 200 250
Collector current Ic (A)
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7MBP150RTB060 IGBT-IPM
Dynamic brake characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=25°C (Terminal)
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage VCE (V)
Collector current Ic (A)
80
60
40
20
0
Collector current vs. Collector-Emitter voltage
Tj=125°C (Terminal)
Collector current Ic (A)
0 0.5 1 1.5 2 2.5 3
Collector-Emitter voltage VCE (V)
Transient thermal resistance Reverse biased safe operating area
1
0.1
0.01
Thermal resistance Rth(j-c) (°C/W)
<
=
Vcc=15V, Tj 125°C
Collector current Ic (A)
0 100 200 300 400 500 600 700
Collector-Emitter voltage VCE (V)
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case temperature Tc (°C)
250
200
1 50
100
50
0
Collector power dissipation Pc (W)
Power derating for IGBT (per device)
80
60
40
20
0
0.001 0.01 0.1 1
Pulse width Pw (sec.)
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