2009-12-02
BFP420
1
1
2
3
4
NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding Gms = 21 dB at 1.8 GHz
• Transition frequency fT = 25 GHz
• Gold metallization for high reliability
• SIEGET 25 GHz fT - Line
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420 AMs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
T
A
≤ 0 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC35 mA
Base current IB3
Total power dissipation2)
TS ≤ 107 °C
Ptot 160 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 260 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 3 µA
DC current gain
IC = 20 mA, VCE = 4 V, pulse measured
hFE 60 95 130 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.15 0.3 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.37 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
F- 1.1 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|214 17 -
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3- 22 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 12 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Simulation Data
For SPICE-model as well as for S-parameters including noise parameters refer
to our internet website: www.infineon.com/rf.models. Please consult our website
and download the latest version before actually starting your design.
The simulation data have been generated and verified up to 10 GHz using typical
devices. The BFP420 nonlinear SPICE-model reflects the typical DC- and RF-device
performance with high accuracy.
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 1 2 V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
Ccb
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Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
fT
2 to 4
1.5
1
0.75
0.5
Power gain Gma, Gms, |S21|² = ƒ (f)
VCE = 2 V, IC = 20 mA
0 1 2 3 4 5 6
0
4
8
12
16
20
24
28
32
36
40
44
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 4 8 12 16 20 24 28 32 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
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Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 4 8 12 16 20 24 28 32 mA 38
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 4 8 12 16 20 24 28 mA 36
IC
0
0.5
1
1.5
2
dB
3
F
ZS = 50 Ohm
ZS = ZSopt
Noise figure F = ƒ(f)
VCE = 2 V, ZS = ZSopt
01234GHz 6
f
0
0.5
1
1.5
2
dB
3
F
IC = 20 mA
IC = 5 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 5 mA / 20 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
0.45GHz
0.9GHz
1.8GHz
2.4GHz
6GHz
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2009-12-02
BFP420
9
Edition 2009-12-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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or system.
Life support devices or systems are intended to be implanted in the human body,
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