TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
Qualified Level
2N6676 2N6678 2N6691 2N6693
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N6676
2N6691 2N6678
2N6693 Unit
Collector-Emitter Voltage VCEO 300 400 Vdc
Collector-Base Voltage VCBO 450 650 Vdc
Collector-Base Voltage VCEX 450 650 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 5.0 Adc
Collector Current IC 15 Adc
2N6676
2N6678 2N6691
2N6693
Total Power Dissipation @ TA = 250C
@ TC = 250C(1) PT 6.0(2)
175 3.0(3)
175 W
W
Operating & Storage Junction Temperature Range Top; Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.0 0C/W
1) Derate linearly 1.0 W/0C for TC > 250C
2) Derate linearly 34.2 mW/0C for TA > 250C
3) Derate linearly 17.1 mW/0C for TA > 250C
2N6676, 2N6678
TO-3 (TO-204AA)*
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N6676, 2N6691
2N6678, 2N6693
V(BR)CEO
300
400
Vdc
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = 1.5 Vdc 2N6676, 2N6691
VCE = 650 Vdc, VBE = 1.5 Vdc 2N6678, 2N6693
ICEX
0.1
0.1
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 8.0 Vdc IEBO
2.0 mAdc
Collector-Base Cutoff Current
VCB = 450 Vdc 2N6676, 2N6691
VCB = 650 Vdc 2N6678, 2N6693 ICBO
1.0
1.0 mAdc
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1.0 Adc; VCE = 3.0 Vdc
IC = 15 Adc; VCE = 3.0 Vdc hFE
15
8.0
40
20
Collector-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc VCE(sat) 1.0 Vdc
Base-Emitter Saturation Voltage
IC = 15 Adc; IB = 3.0 Adc VBE(sat) 1.5 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc; VCE = 10 Vdc, f = 5 MHz hfe 3.0 10
Output Capacitance
VCB = 10 Vdc; IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 150 500 pF
SWITCHING CHARACTERISTICS
Delay Time td 0.1 µs
Rise Time tr 0.6 µs
Storage Time ts 2.5 µs
Fall Time tf 0.5 µs
Cross-Over Time
See Figure 3 of MIL-PRF-19500/538
tc 0.5 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 11.7 Vdc, IC = 15 Adc All Types
Test 2
VCE = 30 Vdc, IC = 5.9 Adc 2N6676, 2N6678
Test 3
VCE = 100 Vdc, IC = 0.25 Adc All Types
Test 4
VCE = 25 Vdc, IC = 7.0 Adc 2N6691, 2N6693
Test 5
VCE = 300 Vdc, IC = 20 mAdc 2N6676, 2N6691
VCE = 400 Vdc, IC = 10 mAdc 2N6678, 2N6693
Clamped Switching
TA = 250C; VCC = 15 Vdc
IC = 15 Adc; Clamped Voltage = 350 Vdc 2N6676, 2N6691
IC = 15 Adc; Clamped Voltage = 450 Vdc 2N6678, 2N6693
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
