VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 * * * * Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 150 A 300 A 20 V 10 s 150 C 5SMX 12M1274 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 25 C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) Gate charge Qge Input capacitance Cies 1.9 2.15 IC = 150 A, VCE = 600 V, VGE = -15 ..15 V 450 4.5 6.5 V 1110 0.46 Internal gate resistance RGint 3 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 10.9 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Cres td(off) A nA Reverse transfer capacitance Turn-off delay time A 200 Coes tr V -200 Output capacitance Rise time Unit V 100 Tvj = 125 C IC = 6 mA, VCE = VGE, Tvj = 25 C 2.4 2.4 Tvj = 25 C ICES max V Tvj = 125 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ 0.72 VCC = 600 V, IC = 150 A, RG = 5.6 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 180 Tvj = 125 C 200 Tvj = 25 C 60 Tvj = 125 C 70 VCC = 600 V, IC = 150 A, RG = 8.2 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 410 Tvj = 125 C 460 Tvj = 25 C 50 Tvj = 125 C 60 Tvj = 25 C 10.6 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 5.6 , L = 60 nH, inductive load, FWD: 3x 5SLX 12E1200 VCC = 600 V, IC = 150 A, VGE = 15 V, RG = 8.2 , L = 60 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 16.9 Tvj = 25 C 9.4 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 14.2 620 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1305-00 May 08 page 2 of 5 5SMX 12M1274 Mechanical properties Parameter Unit Dimensions Overall die L x W 13.6 x 13.6 mm exposed L x W (except gate pad) front metal 12.0 x 12.0 mm 1.19 x 1.19 mm 130 20 m 4 m 1.8 m gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1305-00 May 08 page 3 of 5 5SMX 12M1274 300 300 VCE = 20 V 250 250 25 C 125 C 200 IC [A] IC [A] 200 150 150 100 100 50 50 125 C 25 C VGE = 15 V 0 0 0 1 2 3 0 4 1 2 3 4 5 VCE [V] Fig. 1 7 8 9 10 11 12 VGE [V] Typical on-state characteristics Fig. 2 0.06 Typical transfer characteristics 0.07 VCC = 600 V RGon = 5.6 ohm RGoff = 8.2 ohm VGE = 15 V Tvj = 125 C L = 60 nH 0.04 VCC = 600 V IC = 150 A VGE = 15 V Tvj = 125 C L = 60 nH 0.06 0.05 Eon, Eoff [J] 0.05 Eon, Eoff [J] 6 Eon 0.03 Eon 0.04 0.03 0.02 Eoff 0.02 Eoff 0.01 0.01 0.00 0 0 50 100 150 200 250 300 0 IC [A] Fig. 3 Typical switching characteristics vs collector current 10 20 30 40 50 RG [ohm] Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1305-00 May 08 page 4 of 5 5SMX 12M1274 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 Cies 10 C [nF] VGE [V] VCC = 800 V 10 Coes 1 5 Cres IC = 150 A Tvj = 25 C 0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Qg [C] Fig. 5 Typical gate charge characteristics 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1305-00 May 08