03/13/06
Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
Ceramic Eyelets
Features
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
FRED
VR = 200V
IF(AV) = 16A
trr = 30ns
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
HFB16HY20CC
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Parameter Max. Units
VRCathode to Anode Voltage ( Per Leg ) 200 V
IF(AV) Continuous Forward Current, TC = 132°C 16
IFSM Single Pulse Forward Current, TC = 25°C ( Per Leg ) 130
PD @ TC = 25°C Maximum Power Dissipation 84 W
TJ, TSTG Operating Junction and Storage Temperature Range -55 to +150 °C
A
Absolute Maximum Ratings
CASE STYLE
TO-257AA
(ISOLATED BASE)
ANODE COMMON ANODE
CATHODE
PD - 94223B
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HFB16HY20CC
A/µs
nC
A
Dynamic Recovery Characteristics ( Per Leg ) @ T J = 25°C (unless otherwise specified)
A/µs
nC
A
Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time 30 ns IF = 1.0A,VR = 30V, dif/dt = 200A/µs
trr1 Reverse Recovery Time 30 ns TJ = 25°C See Fig.
trr2 — 55 T
J = 125°C 5 IF = 16A
IRRM1 Peak Recovery Current 4.0 TJ = 25°C See Fig.
IRRM2 7.7 TJ = 125°C 6 VR = 160V
Qrr1 Reverse Recovery Charge 66 TJ = 25°C See Fig.
Qrr2 224 TJ = 125°C 7 dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current 620 TJ = 25°C See Fig.
di(rec)M/dt2 During tb 1560 TJ = 125°C 8
Thermal - Mechanical Characteristics
Parameter Typ. Max. Units
RthJC Junction-to-Case, Single Leg Conducting 1.49
Wt Weight 4.3 g
°C/W
See Fig. 2
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 200 V IR = 100µA
Electrical Characteristics ( Per Leg ) @ TJ = 25°C (unless otherwise specified)
LSSeries Inductance 6.9 nH Measured from anode lead to cathode
lead, 6mm ( 0.025 in. ) from package
CTJunction Capacitance, See Fig. 3 72 pF V R = 200V
IRReverse Leakage Current 10 µA VR = VR Rated
See Fig. 2 100 µA VR = V R Rated, TJ = 125°C
VFForward Voltage 1.09 IF = 8.0A, TJ = -55°C
See Fig. 1 0.98 IF = 8.0A, TJ = 25°C
— — 1.15 IF = 16A, TJ = 25°C
— — 1.06 IF = 16A, TJ = 125°C
V
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HFB16HY20CC
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics ( Per Leg )
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage ( Per Leg )
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage ( Per Leg )
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current ( Per Leg )
040 80 120 160 200
Reverse Voltage - VR (V)
10
100
1000
Junction Capacitance - C T (pF)
TJ = 25°C
040 80 120 160 200
Reverse Voltage - VR (V)
0.0001
0.001
0.01
0.1
1
10
100
Reverse Current - IR ( uA )
125°C
75°C
25°C
100°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - IF (A)
Tj = -55°C
Tj = 125°C
Tj = 25°C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal R esponse (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPO NSE)
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HFB16HY20CC
Fig. 7 - Typical Stored Charge Vs. dif/dt ( Per Leg ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt ( Per Leg )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,( Per Leg ) Fig. 6 -Typical Recovery Current Vs. dif/dt ( Per Leg )
100 1000
dif / dt - ( A / µs )
20
30
40
50
60
70
80
trr - ( ns )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 8.0A
IF = 32A
IF = 16A
100 1000
dif / dt - ( A / µs )
1
10
100
IRRM - ( A )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 8.0A
IF = 32A
IF = 16A
100 1000
dif / dt - ( A / µs )
10
100
1000
Qrr - ( nC )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 8. 0A
IF = 32A
IF = 16A
100 1000
dif / dt - ( A / µs )
100
1000
10000
di ( rec )M / dt - ( A / µs )
VR = 160V
TJ = 125°C
TJ = 25°C
IF = 8.0A
IF = 32A
IF = 16A
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HFB16HY20CC
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
Case Outline and Dimensions — TO-257AA
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PIN ASSIGNMENT S ( CERAMIC EYE LETS )
1 = ANODE 1
2 = COMMON CATHODE
3 = ANODE 2
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2006