2SK3591-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings Unit V 150 V 120 A Continuous drain current 57 Equivalent A Pulsed drain current 228 V Gate-source voltage 30 A Non-repetitive Avalanche current 57 mJ Maximum Avalanche Energy 272.5 kV/s Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/s Max. power dissipation 2.16 W Gate(G) 95 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation voltage VISO *6 2 kVrms *1 L=123H, Vcc=48V, See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS < = -ID, -di/dt=50A/s, Vcc < = 150V *5 VGS=-30V *6 t=60sec f=60Hz circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=30V VDS=0V ID=20A VGS=10V Typ. 150 3.0 Tch=25C Tch=125C ID=20A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V 13 RGS=10 VCC =75V ID=40A VGS=10V L=123H Tch=25C IF=40A VGS=0V Tch=25C IF=40A VGS=0V -di/dt=100A/s Tch=25C 10 31 26 1940 310 24 20 26 50 20 52 15 18 Max. 5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 57 1.10 0.14 0.77 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.316 58.0 Units C/W C/W 1 2SK3591-01MR FUJI POWER MOSFET Characteristics 1000 80 800 60 600 EAS [mJ] PD [W] 100 Allowable Power Dissipation PD=f(Tc) 40 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=23A IAS=35A 400 IAS=57A 200 20 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 160 20V 100 10V 120 80 ID[A] ID [A] 8V 7.5V 7.0V 40 10 1 6.5V 6.0V 0.1 VGS=5.5V 0 0 2 4 6 8 10 0 12 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS[V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 0.15 100 VGS= 5.5V 6.0V 0.12 6.5V 7.0V 7.5V gfs [S] RDS(on) [ ] 10 8V 0.09 10V 20V 0.06 1 0.03 0.1 0.1 0.00 1 10 100 0 40 80 120 160 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3591-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 7.0 100 6.5 90 5.5 70 5.0 VGS(th) [V] RDS(on) [ m ] 6.0 80 60 50 max. max. 4.5 4.0 3.5 3.0 40 typ. 30 min. 2.5 2.0 1.5 20 1.0 10 0.5 0 -50 -25 0 25 50 75 100 125 0.0 150 -50 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=40A, Tch=25C 10 1 14 12 Ciss 10 Vcc= 75V 0 Coss C [nF] VGS [V] 10 8 6 10 -1 4 Crss 2 0 0 20 40 60 10 80 -2 10 -1 10 0 Qg [nC] 10 1 10 2 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 3 10 100 t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 2 10 td(off) t [ns] IF [A] 10 td(on) 1 0.1 0.00 tr 10 1 0 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 -1 10 VSD [V] 10 0 10 1 2 10 ID [A] http://store.iiic.cc/ 3 2SK3591-01MR 10 2 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4