APTGT200A120D3G
APTGT200A120D3G – Rev 1 September, 2008
www.microsemi.com 1-5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 300
IC Continuous Collector Current TC = 80°C 200
ICM Pulsed Collector Current TC = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1050 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
APTGT200A120D3G
APTGT200A120D3G – Rev 1 September, 2008
www.microsemi.com 2-5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 500 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 200A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 8mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 14
Crss Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz 0.6 nF
QG Gate charge VGE=±15V, IC=200A
VCE=600V 1.9 µC
Td(on) Turn-on Delay Time 250
Tr Rise Time 90
Td(off) Turn-off Delay Time 550
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 3.6Ω 130
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 3.6Ω 180
ns
Eon Turn on Energy Tj = 125°C 15
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 200A
RG = 3.6Ω Tj = 125°C 35
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C 800 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 750
IRRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 1000 µA
IF DC Forward Current Tc = 80°C 200 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 200A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time
Tj = 125°C 280
ns
Tj = 25°C 22
Qrr Reverse Recovery Charge
Tj = 125°C 40
µC
Tj = 25°C 9
Err Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =3500A/µs
Tj = 125°C 16 mJ
APTGT200A120D3G
APTGT200A120D3G – Rev 1 September, 2008
www.microsemi.com 3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.12
RthJC Junction to Case Thermal Resistance Diode 0.20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
For terminals M6 3 5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 350 g
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
APTGT200A120D3G
APTGT200A120D3G – Rev 1 September, 2008
www.microsemi.com 4-5
Typical Performance Curve
Output Character istics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
100
200
300
400
00.511.522.533.5
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
100
200
300
400
00.511.522.533.54
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
100
200
300
400
5 6 7 8 9 10 11 12
V
GE
(V)
I
C
(A)
Energy losses vs Co l lector Cur re n t
Eon
Eoff
Err
0
15
30
45
60
75
0 100 200 300 400
I
C
(A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 3.6 Ω
T
J
= 125°C
Eon
Eoff
Err
0
10
20
30
40
50
60
70
0 4 8 12162024
Gate Resistance (ohms)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 200A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
100
200
300
400
500
0 300 600 900 1200 1500
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=3.6 Ω
maximum Effectiv e Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT200A120D3G
APTGT200A120D3G – Rev 1 September, 2008
www.microsemi.com 5-5
Forward Characteristic of di od e
T
J
=25°C
T
J
=125°C
0
100
200
300
400
00.40.81.21.622.4
V
F
(V)
I
F
(A)
Hard
Switching
ZCS
ZVS
0
10
20
30
40
50
0 40 80 120 160 200 240 280
I
C
(A)
Fmax, O pe rating Freque nc y (kHz )
V
CE
=600V
D=50%
R
G
=3.6 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maxim u m E ffec tiv e Trans i en t Thermal Imp eda nce, Junction to Case vs Pu l s e Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
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