MPSH10 NPN E PITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R201-022,Ea
ABSOLUTE MAXIMUM RATING (Ta=25°C,u nless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 3 V
Total Power Dissipation Pc 350 mW
Collector Current Ic 50 mA
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=100μA 30 V
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA 25 V
Emitter-Base Breakdown Voltage BVEBO I
E=10μA 3 V
Collector Cut-Off Current ICBO V
CB=25V 100 nA
Emitter Cut-Off Current IEBO V
EB=2V 100 nA
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA 500 mV
Base-Emitter On Voltage VBE(ON) VCE=10V, IC=4mA 950 mV
DC Current Gain hFE V
CE=10V, IC=4mA 60
Output Capacitace COB V
CB=10V, f=1MHZ 0.7 pF
Current Gain Bandwidth Product fT V
CE=10V, IC=4mA, f=100MHZ 650 MHZ
CLASSIFICATION OF hFE
RANK A B C
RANGE 60-100 90-130 120 -200