Single Diode Schottky Barrier Diode DG1H3A SOV 1.5A Ultra-small SMD Ultla-thin PKRG=0.8mm Low VrF=0.36V Reverse connect protection for LE aed @/)\2SMD @792/=0.8mm @(EVF=0.36V eNy 7 U eI DC power source #DC/DCIYI\-9 Mew RATINGS DC/DG Converter MS+@iE OUTLINE Package : G1F Unit-mm Weight 0.011g(Typ) be) AYE r7 Cathode mark AR Type No. pry 5 (OA) Date cade 0.8 (ae SEEM IOv Titer Webtt 4 bit CER de) & OB F Su. $eRIZeAR LOM TC SIRE CHEF Bu. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection". @i@xtHATH Absolute Maximum Ratings (HED TI=25C) A ms | 4 ff in % MAE Item Symbol] Conditions Type No. DG1H3A Unit CAE mI Storage Temperature Tstg 55~125 C fede bia E : Operation Junction Temperature Tj 125 C 2 TE T Maximurn Reverse Voltage Vem 30 V Haine I 50Hz IEE, HTL Fae 2ee 0.85 A Average Rectified Forward Current 9 50Hz sine wave, Resistance load| . cgi Tr=107C 15 eA YMA HE I 50H 2 aki, EM LA oA HH, T]= 25 30 A Peak Surge Forward Current FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C @BAN- MASH Electrical Characteristics G#zOe T/=25C) _ J ASE WAR Ve Ir = 0.5A, Pulse measurement MAX 0.30 Vv Forward Voltage 2 _ AL Ase Ir=15A, _ puise measurement MAX 0.36 He 7 4 23 A le Reverse Current Tr Vr=VrM, Pulse measurement MAX 1 mA Teer ik . = r r . ns Junction Capacitance Cj f=1MHz, Vr=10V ryP 70 pF | MAX 210 . ei PAM] i SMa Gja | Sunction to ambient Z MAX 120 c/w Thermal Resistance 4 MAX 70 . ai FA eg Oil | junction to lead 5 MAX 20 "L YF & bE 8 Y + 32.6mm) Measured on 1 x 1 inch substrate (pattern area : 32.6mm) be lf vt TU Y PIER VF > 160mm) Measured on 1 x 1 inch substrate (pattern area : 160mm) "3 24 RPM 2 PIM (4 9 + 2.100mm) . Measured on 2 x 2 inch alumina substrate (pattern area : 2,100mnr) 18 (J532-1) www.shindengen.co.jp/product/semi/Single SBD Small SMD DG1H3A Miistt) CHARACTERISTIC DIAGRAMS I AE MBAR AHR CARAS UR Tie et Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 1 o- t-- kL _ f--f -lo Sine wave rt D=tp/T | ; r Tewscht4 | i a lOms 1Oms' i leyele Non-repetit ive] Tj=ac | 25C(N 25C(TYP) -i Forward Current Ir (A) = 25C(TYP) ~j-4- Forward Power Dissipation Pr (W) Peak Surge Forward Current Irsm [A) : [Pulse measurement] Forward Voltage Vr (VJ Average Rectified Forward Current lo (A) Number of Cycles (cycle) EAE RIAA HR Hosk Reverse Current Reverse Power Dissipation Junction Capacitance . - 1000 Terie! oe Te eectryP) = eT D=ip/T Hie te < Bi BES a . ret Gy = T= 1OOC(T YP) TH=125C : = 5 Lad oO & a a . = = E Z = 100 = ti e o a z T= 25C(TYP) S = 5 aay a 5 = = o = & g 2 2 = t oe +4 [Pulse measurement] Ei i i or a2 10 aa Reverse Voltage Vr (V) Reverse Voltage Vr (V) Reverse Voltage Vr [V) F4l-F4/7NF Ta-lo Derating Curve Ta-lo F4L-F4yFh7 Telo Derating Curve Tilo pre: On alumina substrate O- ="Ezlo = VR aT Veo 15V ea D=1p/T DC. Average Rectified Forward Current Io (A) Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) Lead Temperature Tf (C) #14 YET PER NY 4 32.6mm) Measured on 1 x 1 inch substrate (pattern area 32.6mm)) * Sine wave (i 50Hz Cillig LT E . * 50Hz sine wave is used for measurements. EMER LOPHES MM o8 9 7 A hfs TB) ET. Typical lt#iatin ede LTE TF. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ Ges2-1) 19