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Model 1615-30
Features:
• RoHS Compliant
• 100 Watts
• DC – 2.3 GHz
• AlN Ceramic
• Non-Nichrome Resistive
Element
• Low VSWR
• 100% Tested
Chip Attenuator
100 Watts, 30 dB
Description
The 1615-30 is high performance Aluminum Nitride (AlN) chip attenuator
intended as a cost competitive alternative to Beryllium Oxide (BeO). The
attenuator is well suited to all cellular frequency bands such as; AMPS, GSM,
DCS, PCS, PHS and UMTS. The Attenuator is also RoHS compliant!
General Specifications
Resistive Element Thick film
Substrate AlN Ceramic
erminal Finish Matte Tin over Nickel Barrier
Operating Temperature -55 to +200°C (see de rating chart)
Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable
portions of MIL-E-5400. All dimens ions in inches.
Electrical Specifications ±0.5 dB, DC - 960 MHz
ttenuation Value: 30 dB +0.5, -1 dB, 960 MHz - 2.3 GHz
Power: 100 Watts
Frequency Range: DC – 2.3 GHz
Input Return Loss 19dB
Specification based on unit properly installed using suggested mounting instructions and a
50 ohm nominal impedance. Specifications s ubject to change.
Outline Drawing
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES.
TOLERANCES ON DECIMALS .XXX ± .010 1615-30 pg.1 of 2