NE5531079A-A - Renesas Electronics

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April 1st, 2010

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Document No. PU10752EJ01V0DS (1st edition)

Date Published April 2009 NS

Printed in Japan

SILICON POWER MOS FET

NE5531079A

7.5 V OPERATION SILICON RF POWER LDMOS FET

FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

DATA SHEET

2009

DESCRIPTION

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission

power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a

surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz

under the 7.5 V supply voltage.

FEATURES

• High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

• High power added efficiency :

add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

• High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)

• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

• Single supply : VDS = 7.5 V MAX.

APPLICATIONS

• 460 MHz band radio systems

• 900 MHz band radio systems

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

NE5531079A NE5531079A-A 79A (Pb-Free) W5 • 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

NE5531079A-T1 NE5531079A-T1-A • 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

NE5531079A-T1A NE5531079A-T1A-A • 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Part number for sample order: NE5531079A

Data Sheet PU10752EJ01V0DS

NE5531079A

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

Drain to Source Voltage VDS Note 1 30 V

Gate to Source Voltage VGS 6.0 V

Drain Current IDS 3.0 A

Drain Current (Pulse Test) IDS Note 2 6.0 A

Total Power Dissipation Ptot 35 W

Channel Temperature Tch 125 °C

Storage Temperature Tstg −55 to +125 °C

Note 1. VDS will be used under 12 V on RF operation.

2. Duty Cycle ≤ 50%, Ton ≤ 1 s

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Drain to Source Voltage VDS − 6.0 7.5 V

Gate to Source Voltage VGS 1.15 1.55 2.05 V

Drain Current IDS − 2.0 − A

Input Power Pin f = 460 MHz, VDS = 6.0 V − 25 30 dBm

ELECTRICAL CHARACTERISTICS

(TA = +25°C, unless otherwise specified, using our standard test fixture)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Gate to Source Leakage Current IGSS VGS = 6.0 V − − 100 nA

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

IDSS VDS = 25 V − − 10 nA

Gate Threshold Voltage Vth VDS = 7.5 V, IDS = 1.0 mA 0.8 1.15 1.55 V

Thermal Resistance Rth Channel to Case − 2.9 − °C/W

Transconductance gm VDS = 7.5 V, IDS = 700±100 mA 2.5 3.2 4.0 S

Drain to Source Breakdown Voltage BVDSS IDSS = 10

A 25 35

− V

Output Power Pout f = 460 MHz, VDS = 7.5 V, 39.0 40.0 − dBm

Drain Current IDS Pin = 25 dBm, − 2.0 − A

Power Added Efficiency

add IDset = 200 mA (RF OFF) − 68 − %

Linear Gain GL Note − 20.5 − dB

Note P

in = 10 dBm

DC performance is 100% testing. RF performance is testing several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

Data Sheet PU10752EJ01V0DS 3

NE5531079A

TEST CIRCUIT (f = 460 MHz)

123 nH

RFout

C20

27 pF

C10

10 pF

C11

24 pF

1 000 pF

C21

1.8 pF

C22

100 pF

1 F

50 Ω

4.7 kΩ

RFin

1 F

150 Ω

50 Ω

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol Value Type Maker

C1 1

F GRM31CR72A105KA01B Murata

C2 1 000 pF GRM1882C1H102JA01 Murata

C10 10 pF GRM1882C1H100JA01 Murata

C11 24 pF ATC100A240JW American Technical Ceramics

C20 27 pF ATC100A270JW American Technical Ceramics

C21 1.8 pF ATC100A1R8BW American Technical Ceramics

C22 100 pF ATC100A101JW American Technical Ceramics

R1 4.7 kΩ 1/8W Chip Resistor −

R2 150 Ω 1/8W Chip Resistor −

L1 123 nH

0.5 mm,

D = 3 mm, 10 Turns Ohesangyou

PCB − R4775, t = 0.4 mm,

r = 4.5, size = 30 × 48 mm −

Data Sheet PU10752EJ01V0DS

NE5531079A

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

C11

C10

C20

C21

C22

IN OUT

USING THE NEC EVALUATION BOARD

Symbol Value

C1 1

C2 1 000 pF

C10 10 pF

C11 24 pF

C20 27 pF

C21 1.8 pF

C22 100 pF

R1 4.7 kΩ

R2 150 Ω

L1 123 nH

Data Sheet PU10752EJ01V0DS 5

NE5531079A

TYPICAL CHARACTERISTICS (TA = +25°C, IDset = 200 mA, unless otherwise specified)

3rd/5th Order Intermodulation Distortion IM

/IM

(dBc)

2 Tones Output Power P

out

(dBm)

/IM

vs. 2 TONES OUTPUT POWER

2nd Harmonics 2f

(dBc)

3rd Harmonics 3f

(dBc)

Output Power P

out

(dBm)

, 3f

vs. OUTPUT POWER

f = 460 MHz

out

Output Power P

out

(dBm)

Drain Current I

(A)

Input Power P

(dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

3530201510–505 25

= 3.6 V

4.5 V

6.0 V

7.5 V

add

Power Gain G

(dB)

Power Added Efficiency

add

(%)

Input Power P

(dBm)

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

f = 460 MHz

3530201510–505 25

= 3.6 V

4.5 V

6.0 V

7.5 V

f = 460 MHz

–10

–20

–30

–40

–50

–60

–70

4035301520 25 45

= 3.6 V

4.5 V

6.0 V

7.5 V

f1 = 460 MHz

f2 = 461 MHz

–10

–20

–30

–40

–50

–60

–70

3530251015 20 40

= 3.6 V

4.5 V

6.0 V

7.5 V

Remark The graphs indicate nominal characteristics.

Data Sheet PU10752EJ01V0DS

NE5531079A

S-PARAMETERS

S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import

of the parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.necel.com/microwave/en/

Data Sheet PU10752EJ01V0DS 7

NE5531079A

PACKAGE DIMENSIONS

79A (UNIT: mm)

0.9±0.2

0.2±0.1

0.4±0.15

5.7 MAX.

0.6±0.15

0.8±0.15

4.4 MAX.

4.2 MAX.

Source

Gate Drain

(Bottom View)

3.6±0.2

1.5±0.2

1.2 MAX.

0.8 MAX.

1.0 MAX.

Source

Gate Drain

W 5

21001

79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)

1.7

4.0

0.5

1.0

5.9

1.2

Gate

Source

Drain

0.5

6.1

0.5

Through Hole: 0.2 × 33

Stop up the hole with a rosin or

something to avoid solder flow.

Data Sheet PU10752EJ01V0DS

NE5531079A

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Infrared Reflow Peak temperature (package surface temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Time at temperature of 220°C or higher : 60 seconds or less

Preheating time at 120 to 180°C : 120±30 seconds

Maximum number of reflow processes : 3 times

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

IR260

Wave Soldering Peak temperature (molten solder temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Preheating temperature (package surface temperature) : 120°C or below

Maximum number of flow processes : 1 time

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

WS260

Partial Heating Peak temperature (pin temperature) : 350°C or below

Soldering time (per pin of device) : 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

HS350-P3

Caution Do not use different soldering methods together (except for partial heating).

NE5531079A

The information in this document is current as of April, 2009. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or

data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all

products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from the use of NEC Electronics products listed in this document

or any other liability arising from the use of such products. No license, express, implied or otherwise, is

granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of a customer's equipment shall be done under the full

responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by

customers or third parties arising from the use of these circuits, software and information.

While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,

customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To

minimize risks of damage to property or injury (including death) to persons arising from defects in NEC

Electronics products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment and anti-failure features.

NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and

"Specific".

The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-

designated "quality assurance program" for a specific application. The recommended applications of an NEC

Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of

each NEC Electronics product before using it in a particular application.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC

Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications

not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to

determine NEC Electronics' willingness to support a given application.

(Note)

•

M8E 02. 11-1

(1)

(2)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

majority-owned subsidiaries.

"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

defined above).

Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots.

Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support).

Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

"Standard":

"Special":

"Specific":