BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control. Features D D D D D D D D D Hermetically sealed TO-18 case Lens window Angle of half sensitivity = 15 94 8402 Exact central chip alignment Base terminal available Very high photo sensitivity High linearity Suitable for visible and near infrared radiation Selected into sensitivity groups Applications Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range light barriers with additional optics, optical switches, alarm systems. Absolute Maximum Ratings Tamb = 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Document Number 81534 Rev. 2, 20-May-99 Test Conditions x tp 10 ms Tamb 25 C x x y t 5 s, distance from touching border 2 mm Symbol VCBO VCEO VEBO IC ICM Ptot Tj Top Tstg Tsd Value 80 70 7 50 200 250 125 -55...+125 -55...+125 260 Unit V V V mA mA mW C C C C RthJA RthJC 400 150 K/W K/W www.vishay.com 1 (6) BPX43 Vishay Semiconductors Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Emitter Base Capacitance Collector Base Capacitance Collector Light Current Temp. Coefficient of Ica Base Light Current Test Conditions IC = 1 mA Symbol V(BR)CE Min 70 Typ Max Unit V 10 23 47 41 200 nA pF pF pF mA O VCE = 25 V, E = 0 VCE = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 Ee = 0.5 mW/cm2, = 950 nm, VCE = 5 V = 950 nm Ee = 0.5 mW/cm2, = 950 nm, VCB = 5 V l l l Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 0.5 mW/cm2, Voltage = 950 nm, IC = 0.1 mA l ICEO CCEO CEBO CCBO Ica 0.8 TKIca Iba 1 10 %/K A 15 920 630...1040 0.15 0.3 deg nm nm V Max Unit 1.0 1.6 mA mA mA s s s lp l0.5 VCEsat m Type Dedicated Characteristics Tamb = 25_C Parameter Current Gain Test Conditions VCE= 5 V, IC = 1 mA Collector Light g Current Ee=0.5 mW/cm2, =950nm, VCE=5V l Rise Time/ Fall Time www.vishay.com 2 (6) VCE=5V, IC=1mA, RL=1k =820nm Wl Type BPX38-4 BPX38-5 BPX38-6 BPX38-4 BPX38-5 BPX38-6 BPX38-4 BPX38-5 BPX38-6 Symbol B B B Ica Ica Ica tr, tf tr, tf tr, tf Min 0.5 0.8 1.25 Typ 330 520 650 0.7 1.25 2 15 20 25 m m m Document Number 81534 Rev. 2, 20-May-99 BPX43 Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified) 100 Ica - Collector Light Current ( mA ) P tot - Total Power Dissipation ( mW ) 800 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 5 10 4 1 0.1 105 104 103 102 VCE=20V E=0 Ee=1 mW/cm2 BPX 43-5 l=950nm Ica - Collector Light Current ( mA ) I CEO - Collector Dark Current ( nA ) 10 101 10 1 Figure 4. Collector Light Current vs. Irradiance 106 0.5 mW/cm2 0.2 mW/cm2 1 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 100 0.1 20 50 100 150 Tamb - Ambient Temperature ( C ) 94 8343 0.1 1 100 10 VCE - Collector Emitter Voltage ( V ) 94 8370 Figure 2. Collector Dark Current vs. Ambient Temperature Figure 5. Collector Light Current vs. Collector Emitter Voltage 800 3.5 6 3.0 VCE=5V Ee=1mW/cm2 l=950nm 2.5 B - Amplification I ca rel - Relative Collector Current 0.1 Ee - Irradiance ( mW / cm2 ) 94 8369 Figure 1. Total Power Dissipation vs. Ambient Temperature 2.0 1.5 1.0 600 5 400 4 200 VCE=5V 0.5 0 0.01 0 0 94 8344 VCE=5V l=950nm 0.01 0.01 150 Tamb - Ambient Temperature ( C ) 94 8342 6 50 100 150 Tamb - Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature Document Number 81534 Rev. 2, 20-May-99 94 8363 0.1 1 100 10 IC - Collector Current ( mA ) Figure 6. Amplification vs. Collector Current www.vishay.com 3 (6) BPX43 Vishay Semiconductors 40 S ( l ) rel - Relative Spectral Sensitivity CCBO - Collector Base Capacitance ( pF ) 50 f=1MHz 30 20 10 0 0.1 1 10 0.8 0.6 0.4 0.2 0 400 100 VCB - Collector Base Voltage ( V ) 94 8364 1.0 600 Figure 7. Collector Base Capacitance vs. Collector Base Voltage 800 Figure 10. Relative Spectral Sensitivity vs. Wavelength 0 S rel - Relative Sensitivity CEBO - Emitter Base Capacitance ( pF ) 80 f=1MHz 60 40 20 1000 l - Wavelength ( nm ) 94 8367 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0.1 VEB - Emitter Base Voltage ( V ) 93 8365 0.4 0.2 0 0.2 0.4 0.6 94 8371 Figure 8. Emitter Base Capacitance vs. Emitter Base Voltage C CEO - Collector Emitter Capacitance ( pF ) 0.6 10 1 Figure 11. Relative Radiant Sensitivity vs. Angular Displacement 50 f=1MHz 40 30 20 10 0 0.1 94 8366 1 10 100 VCE - Collector Emitter Voltage ( V ) Figure 9. Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.com 4 (6) Document Number 81534 Rev. 2, 20-May-99 BPX43 Vishay Semiconductors Dimensions in mm 96 12178 Document Number 81534 Rev. 2, 20-May-99 www.vishay.com 5 (6) BPX43 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 6 (6) Document Number 81534 Rev. 2, 20-May-99