HN27512 Series Maintenance Only 512K (64K x 8-bit) UV and OTP EPROM @ DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed programming. Hitachi's HN27512 is offered in JEDEC-Standard Byte-Wide EPROM pinouts in a 28-pin Ceramic and Plastic DIP packages. @ FEATURES + Fast Access Times: (DG-28) 250 ns/300 ns (max) + Single Power Supply: Vog = 5 V + 10% + Low Power Dissipation: Active Mode: 45 mA (typ) Standby Mode: 40 mA (max) * High Speed Programming * Programming Power Supply: Vop = 12.5V40.3V (DP-28) * Pin Arrangement: JEDEC Standard Byte-Wide EPROM * Package: 28-pin Ceramic DIP 28-pin Plastic DIP B ORDERING INFORMATION @ PIN ARRANGEMENT Type No. Access Time Package HN27512G-25 250 ns 28-pin Ceramic DIP HN27512G/P Series HN27512G-30 300 ns (DG-28) Ly HN27512P-25 250 ns 28-pin Plastic DIP A 4 1 a Voc 1202 Al4 HN27512P-30 300 ns (DP-28) A743 2615 Ai3 ABC] 4 2517] As @ PIN DESCRIPTION AS oI 5 24 5 AQ A4 6 28-PIN 23 Alt Pin Name Function A307 DIP - 22. |") OE/Vpp 28-LEAD A.A Address At o 5 SOP 0 5 a TOP VIEW VO, - VO, Input/Output Ao (10 1911/07 = voo [11 181711/06 CE Chip Enable voi C12 7WAt/os OE Output Enable voz (113 16 [1/04 Vsg 7114 15[11/03 Vin Power Supply Vop Programming Supply (PinD28.HN27C512) 5s Ground me G49b2e03 002537b 429 HITACHI Hitachi America, Ltd. 2000 Sierra Point Pkwy. + Brisbane, CA 94005-1819 (415) 589-8300 4-21HN27512 Series m BLOCK DIAGRAM AI1-A15 ce Sever Veg O- OENer gg O- Input Data Control 1.024 X 512 Memory Matnx Y ~ Gating Y - Decoder ~ A0-A4, AID. [Bbe - High Threshold Invener (BD.HN27512) m@ MODE SELECTION Mode Voc CE OEM, A, vO Read Veo Vv, L V, L x" Dour Output Disable Voc Vie Vin xX High-Z Standby Voc Vig X X High-Z Program Voc vi Vop Xx Dy Program Verify Voc Vie Vie xX Dour Program Inhibit Vee Vin Vop x High-Z2 Identifier Vee Vip Vie VA? ID Notes: 1. X= Don't Care. 2 11.5VSV,s125V @ ABSOLUTE MAXIMUM RATINGS Item Symbol Value Unit Supply Voltage ' Voc -0.6 to +7.0 v Programming Voltage ' Vop -0.6 to +13.5 Vv All Input and Output Voitage ' Vin. Vour -0.6 to +7.0 Vv A, Input Voltage Vo -0.6 to +13.5 V Operating Temperature Range Tope 0 to +70 C Storage Temperature Range Tsr0 -65 to +125 ? C -56 to +125? Storage Temperature Under Bias Taras -10 to +80 c Notes: 1. Relative to V,.. 2. HN27512G. 3. HN27512P. MB 4496203 0025377 345 HITACHI 4-22 Hitachi America, Ltd. 2000 Sierra Point Pkwy. Brisbane, CA 94005-1819 + (415) 589-8300 CAPACITANCE (T, = 25C, f = 1MHz) HN27512 Series Item Symbol Typ. Max. Unit Test Condition Input Capacitance Cin 4 6 pF Vy = OV, all pins except OE/V,, Output Capacitance | C,,,, 8 12 pF Vour = OV m DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (Veg = BV + 10%, T, = 0 to 70C) Item Symbol | Min. Typ. | Max. | Unit | Test Condition Input Leakage Current I, - - 10 HA |V,,=OVtOV, Output Leakage Current lo - - 10 HA Vi, =0VtoV. Operating V,, Current loo - 45 | 100 | mA |CE=OE=V, Standby V,,. Current Ise - - 40 | mA |CE=V,, Input Voltage Vu 2.2 Veo+ 1 *] V Vv, | 0.1! - 0.8 v Output Voltage Von 2.4 - - Void, = 1.0 mA Vo. - - | 045 | Vo |i =2.1mA Notes: 1. V,, min =-0.6 V for pulse width < 20 ns. 2. V,,max = V,,. + 1.5 V for pulse width < 20 ns. If V,,is over the specified maximum value, Read operation can not be guaranteed. @ AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (Veg = SV + 10%, T, = 0 to 70C) Test Conditions * Input pulse levels: * Input rise and fall times: * Output load: 0.45V/2.4V <20ns 1 TTL Gate + 100 pF (including scope and jig) * Reference levels for measuring timing: 0.8V/2.0V 25 30 Test Item Symbol] Min. |Max. | Min. | Max. Unit Condition Address Access Time tece | - [250] - | 300] ns CE =OE=V,, Chip Enable Access Time! t,. | - [250] - | 300] ns OE=V,, Output Enable Access toe | - [100] - [120] ns CE=V,, Time Output Disable to High-Z') t,, 60 | O | 105 ns CE=V,, Output Hold to Address to | Of - | a] - ns CE=OE=V, Change Note: 1. longer driven. Me 4496203 0025378 cTl Hitachi America, Ltd. * 2000 Sierra Point Pkwy. + Brisbane, CA 94005-1819 + (415) 589-8300 HITACHI tp, is defined as the time at which the output becomes an open circuit and data is no 4-23HN27512 Series @ READ TIMING WAVEFORM Address x CE | Standby Mode Data Out a Active Mode /) Standby Mode ___'cE J toe tbr tacc ton { Data Out Valid (TD.R.HN27512) @ DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS (Veq = 6.0 V + 0.25 V, Vp, = 12.5 V + 0.3 V, T, = 25C + 5 C) Item Symbol} Min. | Typ. | Max. | Unit | Test Condition Input Leakage Current ho - - 10 pA | V,,=5.25 V Operating V,,, Current bec - - 100 | mA Operating V,, Current lp - 35 50 | mA | CE=V,, Input Voltage ' Via 2.0 - [Veg 4-5 7} V Vv, | -o1' | - 08 | V Output Voltage Vou 2.4 - - Vi] by, = -400 pA , Vo - - 0.45 | V | 14,=2.1 mA Notes: 1. V,, min = -0.6 V for pulse width < 20 ns. 2. If V,, is over the specified maximum value, programming operation can not be guaranteed. Me 44596203 0025379 136 4-24 Hitachi America, Ltd.-- 2000 Sierra Point Pkwy. Brisbane, CA 94005-1819 + (415) 589-8300 HITACHIHN27512 Series M AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS (Veg = 6 V + 0.25 V, V,, = 12.5 + 0.5 V, T, = 25C + 5C) Test Conditions Input pulse levels: 0.45V/2.4V Input rise and fall times: <20 ns * Reference levels for measuring timing: 0.8 V/2.0V Item Symbol} Min. | Typ. | Max. Unit | Test Condition Address Setup Time tas 2 - - Ls Address Hold Time tay 0 - - ys Data Setup Time tos 2 - - BS Vop Setup Time typs 2 - - us Veg Setup Time tres 2 - - ps Output Enable Hold Time ton 2 - - ps Output Disable Time toe 0 - 130 ns CE initial Programming Pulse Width toy | 0.95 | 1.0 | 1.05 ms CE Overprogramming Pulse Width topyw | 2-85 - 78.75 ms Data Hold Time tou 2 - - us Vp Recovery Time top 2 - - ps Data Valid from Chip Enable toy - > 1 ps Note: 1. t,,is defined as the time at which the output becomes an open circuit and data is no tonger driven. ME 4496203 0025380 55T mm HITACHI Hitachi America, Ltd. 2000 Sierra Point Pkwy. Brisbane, CA 94005-1819 + (415) 589-8300 4-25HN27512 Series @ HIGH PERFORMANCE PROGRAMMING FLOWCHART The Hitachi HN27512 can be programmed with the High Performance Programming algorithm shown in the following flowchart. This algorithm provides a fast programming time without voltage stress to the device or deterioration in reliability of programmed data. SET PROG/VERIFY MODE Vpp = 12.5 20.3 V, Voc = 6.0 20.25 V SET READ MODE Veco= 5.0 V 0.25 V C FAIL_) (FC.P.HN27512) @ HIGH PERFORMANCE PROGRAMMING TIMING WAVEFORM Program Program Verify Address x | t | tas AH Data * Data In Stable >_~< Data Out Valid tos tou tov TOF EVep Oe \ PP Lf * vps | Vv 1 Veo yoC*" ae toeH va tvcs' _____, _____- CE , tpw (TD.PP.HN27512) M8 4496203 0025381 696 Mo atacni 4-26 Hitachi America, Ltd. 2000 Sierra Point Pkwy. * Brisbane, CA 94005-1819 (415) 589-8300HN27512 Series @ ERASING THE HN27512 The Hitachi HN27512 Ceramic DIP package allows the device to be erased by exposure to ultraviolet light of 25374. All of the data is changed to "1" after this erasure procedure. The minimum integrated dose (UV intensity x exposure time) for erasure is 15 W-sec/cm?. @ DEVICE IDENTIFIER MODE DESCRIPTION The Device Identifier Mode allows binary codes to be read from the outputs that identify the manufacturer and the type of device. Using this mode with programming equipment, the device will automatically match its own erase and programming algorithm. @ HN27512 SERIES IDENTIFIER CODE Identifier A, VO, VO, VO, VO, VO, VO, WO, WO, Hex Data ManufacturerCode V,, 0 0 0 0 0 1 1 1 07 Device Code Vi 1 0 0 1 0 1 0 0 94 Notes; 1. A,=12.0V+L0.5V 3. A,-Ag, AirA,,, CE, OE/V,, = V,, @ HN27512P RECOMMENDED SCREENING CONDITIONS Before mounting the HN27512P package, please make the following screening (baking without bias) shown below: Program and Verify with Programmer Bake at 125 to 150C for 24 to 48 hrs Verify Read Out Mount (RSC.EPROM) MM 4496203 0025342 722 HITACHI Hitachi America, Ltd. 2000 Sierra Point Pkwy. Brisbane, CA 94005-1819 + (415) 589-8300 4-27