IGBT Module IC25 = 49 A
VCES = 1200 V
VCE(sat)typ. = 3.1 V
Features
•Package with DCB ceramic base plate
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL registered, E 148688
Applications
•AC and DC motor control
•AC servo and robot drives
•power supplies
•welding inverters
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
•Leads with expansion bend for
stress relief
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSIG 50/12
PSI 50/12*
PSIS 50/12*
PSSI 50/12*
PSSI
PSIS
PSIS 50/12*
PSSI 50/12*
PSIG
*NTC optional
Short Circuit SOA Capability
Square RBSOA
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 49 A
IC80 TC = 80°C 33 A
ICM VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 50 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 208 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C 3.1 3.7 V
TVJ = 125°C 3.5 V
VGE(th) IC = 1 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 1.1 mA
TVJ = 125°C 4.2 mA
IGES VCE = 0 V; VGE = ± 20 V 180 nA
td(on) 100 ns
tr70 ns
td(off) 500 ns
tf70 ns
Eon 4.6 mJ
Eoff 3.4 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 1.65 nF
RthJC (per IGBT) 0.6 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.2 K/W
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
VGE = 15/0 V; RG = 47 Ω
PSI 50/12*
PSIG 50/12
T 16
L 9
X 16
NTC
X 15
IK 10
RS 18
AC 1
A1 JK 10S18LN 9
L 9
F 1
X 16
X 15
NTC
AC 1
RS 18
IK 10
G H 1 0
V X 1 8
K 1 0
X 1 6
X 1 3
X 1 5
N T C
E 2
L 9
O P 9
PSI
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PSIG PSI PSIS PSSI 50/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and
dimensions
PSIS
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
Reverse diodes (FRED)
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 49 A
IF80 TC = 80°C 31 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 30 A; TVJ = 25°C 2.4 2.7 V
TVJ = 125°C 1.77 V
IRM IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C 27 A
trr VR = 600 V; VGE = 0 V 150 ns
RthJC 1.3 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 K/W
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+150 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
PSIG
PSSI
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PSIG PSI PSIS PSSI 50/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
0 200 400 600 800 1000
0
10
20
30
40
50
0
40
80
120
160
200
01234567
0
20
40
60
80
04080120160
0
5
10
15
20
01234567
0
20
40
60
80
TVJ = 125°C
VCE
V
IC
VCE
A
IC
V
nC
QG-di/dt
V
VGE
IRM
trr
A/µs
IRM
trr
9V
11V
VGE = 17V
15V
13V
A
9V
11V
A
4 6 8 10121416
0
20
40
60
80
V
VGE
A
IC
TVJ = 25°C
TVJ = 125°C
01234
0
10
20
30
40
50
V
VF
IF
TVJ = 25°CTVJ = 125°C
A
ns
42T120
42T120
42T120 42T120
42T120 42T120
VGE = 17 V
15 V
13 V
TVJ = 25°C
VCE = 20V
VCE = 600V
IC = 25A
TVJ = 125°C
VR = 600 V
IF = 15 A
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PSIG PSI PSIS PSSI 50/12
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 204060
0
5
10
15
0
50
100
150
0204060
0
4
8
12
0
200
400
600
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 20406080100
0
2
4
6
8
0
200
400
600
800
0 20406080100
0
1
2
3
4
0
40
80
120
160
single pulse
VCE = 600 V
VGE = ±15 V
RG = 47 Ω
TVJ = 125°C
0 200 400 600 800 1000 1200 1400
0
20
40
60
VCE = 600V
VGE = ±15V
RG = 47Ω
TVJ = 125°C
Eon
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
42T120 42T120
42T120
42T120
42T120
VCE = 600 V
VGE = ±15 V
IC = 25 A
TVJ = 125°C
RG = 47 Ω
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 25 A
TVJ = 125°C
MDI...50-12P1
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