BUL1403ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■INTEGRATED ANTISATURATION AND
PROTECTION NETWOR K
■INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
■HIGH VOLTAGE CAPABILITY
■LOW SPREAD OF DYNAMIC PARAMETERS
■MINIM UM LO T- TO- LO T SPR E AD FO R
RELIABLE OPERATION
■VERY HIGH SWITCHING SPEED
■ARCING TEST SELF PROTECTED
APPLICATIONS
■2/4 LAMPS ELEC TRONI C BA LLAS T FOR
FLUORESCENT LIGHTI NG 277 VAC
PUSH- PULL CO NF IGURA TION
DESCRIPTION
The BUL1403ED is a new device, designed for
fluorescent electronic ballast 277 VAC push-pull
applications (up to 4 lamps).
This device, it can be used without baker clamp
and transil protection, reducing greatly the
compon ent count.
INTERNAL SCHEMATI C DI AG RAM
September 2002
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (V BE = 0) 1400 V
VCEO Collector-Emitter Voltage (I B = 0) 650 V
VEBO Emitter-Base Voltage (IC = 0) 11 V
ICCollector Current 3 A
ICM Collector Peak C urrent (tp <5 ms) 6 A
IBBase Current 2 A
IBM Base Peak Current (tp <5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC80W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 1.56
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 1400 V 1 mA
IEBO Base-Emitter Leakage
Current VEB = 9 V 100 µA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA L = 25 mH 650 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 mA 11 18 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 0.5 A IB = 0.05 A
IC = 0.25 A IB = 0.025 A 2.5
1.5 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 0.5 A IB = 0.1 A
IC = 1 A IB = 0.1 A
IC = 2 A IB = 0.4 A
1.0
1.1
1.2
V
V
V
hFE∗DC Current Gain IC = 5 mA VCE = 10 V
IC = 0.4 A VCE = 3 V
IC = 0.8 A VCE = 5 V
18
15
440
td
tr
ts
tf
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
IC = 0.5 A VCC = 125 V
IB1 = 0.05 A IB2 = -0.25 A
D.C. = 2% P.W. = 300 µs
(see figure 1)
0.3
0.8
1.2
0.35
µs
µs
µs
µs
Ear Repetitive Avalanche
Energy L = 2 mH C = 1.8 nF
VCC = 50 V VBE = -5 V
(see figure 2)
6mJ
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
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Safe O perat ing Areas
Out put Charact eris tics
DC Current Gai n
Derating Curve
DC Current Ga in
Collector Em itt er Saturation Volt a ge
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Base Em itt er Sat uration Volt age
Figure 1: Resistive Load Switching Test Circuit
Figure 2: Energy Rat ing Test Circuit
Rev erse B iased SO A
1) Fast electronic switch
2) Non-inductive Resistor
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t from i ts use. N o li cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publicati on are
subject t o cha nge without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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