2013-07-02Rev.2.3 Page 1
IDB30E120
Fast Switching Emitter Controlled Diode Product Summary
VRRM 1200 V
IF30 A
VF1.65 V
T
j
max 150 °C
Feature
• 1200 V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
PG-TO263-3-2
Pin 1 PIN 2 PIN 3
NC C A
Marking
D30E120
Type Package Ordering Code
IDB30E120 PG-TO263-3-2 -
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage VRRM 1200 V
Continous forward current
TC=25°C
TC=90°C
IF50
30
A
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
IFSM 102
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax,D=0.5
IFRM 76.5
Power dissipation
TC=25°C
TC=90°C
Ptot 138
66
W
Operating and storage temperature T
j
,Tst
g
-55...+150 °C
Soldering temperature
reflow soldering, MSL1 TS260 °C
1
3
2
* RoHS compliant
2013-07-02Rev.2.3 Page 2
IDB30E120
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.9 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA -
--
35 62
-
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
IR-
--
-100
2500
µA
Forward voltage drop
IF=30A, Tj=25°C
IF=30A, Tj=150°C
VF-
-1.65
1.7 2.15
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2013-07-02Rev.2.3 Page 3
IDB30E120
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
VR=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
VR=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
trr -
-
-
243
355
380
-
-
-
ns
Peak reverse current
VR=800V, IF = 30 A, diF/dt=850A/µs, Tj=25°C
VR=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
VR=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
Irrm -
-
-
23.7
28.3
29.5
-
-
-
A
Reverse recovery charge
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
VR=800V, IF =30A, diF/dt=850A/µs, Tj=125°C
VR=800V, IF =30A, diF/dt=850A/µs, Tj=150°C
Qrr -
-
-
2630
4700
5200
-
-
-
nC
Reverse recovery softness factor
VR=800V, IF=30A, diF/dt=850A/µs, Tj=25°C
VR=800V, IF=30A, diF/dt=850A/µs, Tj=125°C
VR=800V, IF=30A, diF/dt=850A/µs, Tj=150°C
S-
-
-
6
7.4
7.5
-
-
-
2013-07-02Rev.2.3 Page 4
IDB30E120
2 Diode forward current
IF = f(TC)
parameter: T j≤ 150°C
25 50 75 100 °C 150
TC
0
5
10
15
20
25
30
35
40
45
A55
IF
1 Power dissipation
Ptot = f(TC)
parameter: T
j
≤ 150°C
25 50 75 100 °C 150
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
Ptot
3 Typ. diode forward current
IF = f (VF)
0 0.5 1 1.5 2 V 3
VF
0
10
20
30
40
50
60
70
A
90
IF
-55°C
25°C
100°C
150°C
4 Typ. diode forward voltage
VF = f(Tj)
-60 -20 20 60 100 °C 160
Tj
1.2
1.4
1.6
1.8
2
V
2.4
VF
15A
30A
60A
2013-07-02Rev.2.3 Page 5
IDB30E120
5 Typ. reverse recovery time
trr = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
200 300 400 500 600 700 800 A/µs 1000
diF/dt
200
300
400
500
600
700
800
900
ns
1100
trr
60A
30A
15A
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR= 800V, Tj = 125 °C
200 300 400 500 600 700 800 A/µs 1000
diF/dt
2500
3000
3500
4000
4500
5000
5500
nC
6500
Qrr
15A
30A
60A
7 Typ. reverse recovery current
Irr =f(diF/dt)
parameter: VR = 800V, Tj = 125°C
200 300 400 500 600 700 800 A/µs 1000
diF/dt
5
10
15
20
25
A
35
Irr
60A
30A
15A
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 800V, Tj = 125°C
200 300 400 500 600 700 800 A/µs 1000
diF/dt
4
6
8
10
12
14
18
S
60A
30A
15A
2013-07-02Rev.2.3 Page 6
IDB30E120
9 Max. transient thermal impedance
ZthJC = f(tp)
parameter : D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDP30E120
ZthJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2013-07-02Rev.2.3 Page 7
IDB30E120
2013-07-02Rev.2.3 Page 8
IDB30E120
Published by
Infineon Technologies AG ,
81726 München
© 2009 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types
in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
