CMA80PD1600NA
advanced
Phase leg
Thyristor
4 3 21
Part number
CMA80PD1600NA
Backside: isolated
TAV
T
VV1.29
RRM
80
1600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20110607Data according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
CMA80PD1600NA
advanced
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
V
IA
V
T
1.30
R0.45 K/W
min.
80
VV
100T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
80
P
tot
270 WT = 25°C
C
80
1600
forward voltage drop
total power dissipation
Conditions Unit
1.64
T = 25°C
VJ
125
V
T0
V0.86T = °C
VJ
150
r
T
5.5 mΩ
V1.29T = °C
VJ
I = A
T
V
80
1.72
I = A160
I = A160
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA126
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
54
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
1.07
1.16
4.14
4.00
kA
kA
A
A
910
980
5.73
5.55
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150°C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage V= 6 V T = °C25
(dv/dt) T=150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
IA;V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
150 A
T
P
G
=0.3
di /dt A/µs;
G
=0.3
DDRM
cr
V = ⅔ V
D DRM
GK
1000
1.5 V
T= °C-40
VJ
I
GT
gate trigger current V= 6 V T = °C25
DVJ
95 mA
T= °C-40
VJ
1.6 V
200 mA
V
GD
gate non-trigger voltage T= °C
VJ
0.2 V
I
GD
gate non-trigger current 10 mA
V = ⅔ V
D DRM
150
latching current T= °C
VJ
450 mAI
L
25tµs
p
=10
IA;
G
= 0.3 di /dt A/µs
G
=0.3
holding current T= °C
VJ
200 mAI
H
25V= 6 V
D
R = ∞
GK
gate controlled delay tim e T= °C
VJ
2µst
gd
25
IA;
G
= 0.5 di /dt A/µs
G
=0.3
V = ½ V
D DRM
turn-off time T= °C
VJ
150 µst
q
di/dt = A/µs;10 dv/dt = V/µs;20
V =
R
100 V; I A;
T
= 120 V = ⅔ V
D DRM
tµs
p
= 200
non-repet., I = 80 A
T
150
R
thCH
thermal resistance case to heatsink K/W
Rectifier
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. re pe titive reverse/forward bl ocking volt a ge
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20110607Data according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
CMA80PD1600NA
advanced
Ratings
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
C
M
A
80
PD
1600
NA
Part number
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
CMA80PD1600NA 509041Tube 10CMA80PD1600NAStandard
2500
3000
ISOL
threshold voltage V0.86
mΩ
V
0 max
R
0 max
slope resistance *
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Thyristor
150°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20110607Data according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
CMA80PD1600NA
advanced
4 3 21
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20110607Data according to IEC 60747and per semiconductor unless otherwise specified
© 2011 IXYS all rights reserved
