5SNR10H2501 - Abb Switzerland Ltd. Semiconductors

VCE = 2500 V

IC= 1000 A

ABB StakPak™ H Series

Press-pack IGBT

5SNR 10H2501

PRELIMINARY

Doc. No. 5SYA1580-03 May. 07

• High SOA

• Fails into stable shorted state

• High tolerance to uneven

mounting pressure

• Designed for series connection

• Explosion resistant package

• Modular design concept,

available for a wide range of

current ratings

• SPT chip set

Maximum Rated Values1)

Parameter2) Symbol Conditions min max Unit

Collector-emitter voltage VCES 2500 V

DC collector current ICTc = 75 °C 1000 A

Repetitive peak collector

current ICM 2000 A

Gate-emitter voltage VGES

± 20 V

Total power dissipation Ptot Tc = 25 °C, (IGBT) 10000 W

DC forward current IFTc = 75 °C 1000 A

Repetitive peak forward

current IFM 2000 A

Surge current IFSM VR = 0 V, tp = 10 ms, Tvj = 125 °C,

half-sinewave 12.4 kA

IGBT short circuit SOA tpsc VCC = 1500 V, VCEM ≤ 2500 V,

VGE ≤15V 10 µs

Junction temperature Tvj 5 125 °C

Storage temperature Tstg -40 70 °C

Mounting force 2)

FM 40 75 kN

1)Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9

2)For detailed mounting instructions refer to ABB document no. 5SYA 2037-02

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5SNR 10H2501

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1580-03 May. 07 page 2 of 4

IGBT Characteristic Values3)

Parameter Symbol Conditions min typ max Unit

Tvj = 25°C 2.20 2.60 V

Collector-emitter saturation

voltage VCEsat IC = 1000 A,

VGE = 15 V Tvj = 125°C 2.70 3.00 V

Collector cut-off current ICES VCE = 2500 V, VGE = 0 V, Tvj = 125 °C 18 50 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA

Gate-emitter threshold voltage VGE(TO) IC = 180 mA, VCE = VGE, Tvj = 25 °C 5 7 8.5 V

Tvj = 25°C 1 J

Turn-on energy Eon

VCC = 1250 V,

IC = 1000 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 1.5 J

Tvj = 25°C 1.4 J

Turn-off energy Eoff

VCC = 1250 V,

IC = 1000 A,

RG = 5.6 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 1.8 J

3)Characteristic values according to IEC 60747-9

Diode Characteristic Values4)

Parameter Symbol Conditions min typ max Unit

Tvj = 25°C 1.95 2.20 V

Forward voltage VFIF = 1000 A Tvj = 125°C 1.90 2.20 V

Tvj = 25°C 760 A

Reverse recovery current Irr Tvj = 125°C 950 A

Tvj = 25°C 560 µC

Reverse recovery charge Qrr Tvj = 125°C 950 µC

Tvj = 25°C 1.3 µs

Reverse recovery time trr Tvj = 125°C 1.8 µs

Tvj = 25°C 0.52 J

Reverse recovery energy Erec

VCC = 1250 V,

IF = 1000 A,

RG = 3.9 Ω,

VGE = ±15 V,

Lσ = 200 nH

inductive load

Tvj = 125°C 0.86 J

4)Characteristic values according to IEC 60747-2

Thermal Properties

Parameter Symbol Conditions min typ max Unit

IGBT thermal resistance

junction to case Rth(j-c)

IGBT 11 K/kW

Diode thermal resistance

junction to case Rth(j-c)

Diode 22 K/kW

IGBT thermal resistance case

to heatsink Rth(c-h)

IGBT 2 K/kW

Diode thermal resistance

case to heatsink Rth(c-h)

Diode

Heatsink flatness :

Complete module area < 100 µm

Each submodule area < 20 µm

Roughness : < 1.6 µm 4 K/kW

Operating junction

temperature Tvjop 5 125 °C

5SNR 10H2501

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1580-03 May. 07 page 3 of 4

Mechanical Properties

Parameter Symbol Conditions min typ max Unit

Dimensions L* W* H Typical , see outline drawing 236*150*26 mm

Clearance distance DCacc. IEC 60664-1 and EN50124-1 10 mm

Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm

Weight 1.9 kg

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

t/-

ic)-(jth i

∑

i 1 2 3 4

Ri(K/kW) 4.569 4.611 0.945 0.804

IGBT

τi(ms) 580.8 53.11 3.286 0.609

Ri(K/kW) 9.137 9.223 1.889 1.607

DIODE

τi(ms) 580.8 53.11 3.286 0.609

10-3 10-2 10-1 100101

2 3 4 56789 2 3 4 56789 2 3 4 56789 2 3 4 56789

t [s]

100

101

ZthIC [K/kW]

Fm = 40...75 kN

Double Si de Cooling

IGBT

Diode

Fig.15 Maximum thermal imped ance of IGBT

and diode versus time

Environmental class according to IEC 60721

Mode Class Document - no.

Storage IE 11 5 SZK 9101-01

Transportation IE 23 5 SZK 9102-01

Operation IE 33 5 SZK 9103-01

5SNR 10H2501

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Electrical configuration

AE (Aux. Emitter)G (Gate)

C (Collector) E (Emitter)

Outline drawing

5SNR 20H2501 ABCD 01

StakPak H3

This is an electrostatic sensitive dev ice.

Please observe the international standard IEC 60 747-1, chapter IX.

This product has been designed and qualified for Industrial Le vel

ABB Switzerland Ltd Doc. No. 5SYA1580-03 May. 07

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors