MOTOROLA ecu SEMICONDUCTOR TECHNICAL DATA by MHPM7AZ0AGOAID Hybrid Power Module Integrated Power Stage for 2.0 hp Motor Drives MHPM7A20AG0A (This device is not recommended for new designs) (This device is replaced by MHPM7A20E60DC3) This module integrates a 3-phase input rectifier bridge, 3~phase 20 AMP, 600 VOLT output inverter, brake transistor/diode, current sense resistor and HYBRID POWER MODULE temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the users control board. DC Bus Current Sense Resistor Included Short Circuit Rated 10 ps @ 25C, 300V Temperature Sensor Included Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) Convenient Package Outline uLSAL Recognized * Access to Positive and Negative DC Bus Visit our website at http:/Avwww.mot-sps.com/tsg/ PLASTIC PACKAGE CASE 440-02, Style 1 MAXIMUM DEVICE RATINGS (Ty = 25C unless otherwise noted) Rating | Symbol Value | Unit | INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (Ty = 25C) VRRM 600 Average Output Rectified Current lo 20 Peak Non-repatitive Surge Current (1/2 cycle)(1) lIFSM 240 A OUTPUT INVERTER IGBT Reverse Voltage VCES 600 v Gate-Emitter Voltage VGES +20 Vv Continuous IGBT Collector Current ICmax 20 A Peak Repetitive IGBT Collector Current (PW = 1.0 ms)(2) lo(pk) 40 A Continuous Free-Wheeling Diode Current lFmax 20 A Peak Repetitive Free-Wheeling Diode Current (PW = 1.0 ms)(2) IF (pk) 40 A IGBT Power Dissipation per die (TC = 95C) Pp 78 Ww Free-Wheeling Diode Power Dissipation per die (TC = 95C) Pp 39 Ww Junction Temperature Range Ty 40 to +125 C Short Circuit Duration (Voge = 300V, Ty = 25C) tse 10 ps (1) 1 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle REV2 Motorola, Inc. 1998 Book= 00098579. 24UF MM 6367255 0100222 344 (M) MOTOROLAMHPM7A20AG0A MAXIMUM DEVICE RATINGS (continued) (Tj = 25C unless otherwise noted) | Rating Symbol Value | Unit BRAKE CIRCUIT IGBT Reverse Voltage VcES 600 Vv Gate-Emitter Voltage VGES +20 Vv Continuous IGBT Collector Current ICmax 20 A Peak Repetitive |GBT Collector Current(2) Ic(pk) 40 A IGBT Power Dissipation (Tc = 95C) PD 78 Ww Peak Repetitive Output Diode Reverse Voltage (Ty = 125C) VRRM 600 Vv Continuous Output Diode Current lFmax 20 A Peak Output Diode Current(2) IF(pk) 40 A TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Viso 2500 Vac Operating Case Temperature Range Tc ~ 40 to +90 C Storage Temperature Range Tstg 40 to +125 C Mounting Torque - 6.0 Ib-in ELECTRICAL CHARACTERISTICS (Ty = 25C unless otherwise noted) Characteristic Symbol | Min Typ Max Unit | INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRiy = 600 V) IR - 5.0 50 HA Forward Voltage (I= = 20 A) VF - 11 1.5 Vv Thermal Resistance (Each Die) Rac - - 2.9 C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VcE = 0 V, Vag = + 20 V) IGES - - +20 pA Collector-Emitter Leakage Current (VcE = 600 V, Vee = 0 V) IcES pA Ty = 25C - 6.0 100 Ty = 125C - 2000 Gate-Emitter Threshold Voltage (VoE = Vag, Ic = 1.0 mA) VGE(th) 40 6.0 8.0 Vv Collector-Emitter Breakdown Voltage (Ic = 10 mA, Vag = 0) V(BR)CES 600 - - Vv Collector-Emitter Saturation Voltage (Ic = 20 A, VGE = 15 V) VCE(SAT) - 2.5 3.5 Vv Input Capacitance (VGE =0 V, VcE = 10 V, f = 1.0 MHz) Cijes - 4400 - pF Input Gate Charge (VcE = 300 V, Ic = 20 A, Vag = 15 V) Qr - 145 - nc Fall Time ~ Inductive Load tf - 210 500 ns (VCE = 300 V, Ic = 20 A, VGeE = 15 V, Raoffy = 20 2) Tum-On Energy Eon - - 25 mJ (VCE = 300 V, Ic = 20 A, VGE = 15 V, Reon) = 47 2) Turn-Off Energy Eott - - 2.5 mJ (VCE = 300 V, Ic = 20 A, Ve = 15 V, Ravoff) = 20 2) Free Wheeling Diode Forward Voltage (IF = 20 A, Vae = 0 V) VE - 1.3 2.0 Vv Free Wheeling Diode Reverse Recovery Time ter - 170 200 ns (IF = 20 A, V = 300 V, di/dt = 100 A/us) Free Wheeling Diode Stored Charge Qr - 1060 1600 nG (IF = 20 A, V = 300 V, di/dt = 100 A/us) Thermal Resistance IGBT (Each Die) Rac - ~- 15 C/W Thermal Resistance Free-Wheeling Diode (Each Die) Reic - - 29 CIV (2) 1.0 ms = 1.0% duty cycle 2 Book= 00098579. ayF gm b3b7255 0100223 240 Motorola IGBT Device DataELECTRICAL CHARACTERISTICS (continued) (Ty = 25C unless otherwise noted) MHPM7A20AGO0A | Characteristic Symbol Min Typ Max | Unit | BRAKE CIRCUIT Gate-Emitter Leakage Current (VcE = 0 V, Vae = + 20 V) IGES - - +20 pA Collector-Emitter Leakage Current (VCE = 600 V, VgE = 0 V) ICES pA Ty = 25C - 6.0 100 Ty = 125C - 2000 - Gate-Emitter Threshold Voltage (VCE = VGE, Ico = 1.0 mA) VGE(th) 4.0 6.0 8.0 v Collector-Emitter Breakdown Voltage (Ic = 10 mA, VGE = 0) V(BR)CES 600 ~ - Collector-Emitter Saturation Voltage (V@eE = 15 V, Ic = 20 A) VCE(SAT) - 2.5 3.5 Input Capacitance (VGE = 0 V, VcE = 25 V, f = 1.0 MHz) Cies - 4400 - pF Input Gate Charge (VCE = 300 V, Ic = 20 A, Vag = 15 V) Qr - 145 - nc Fall Time Inductive Load tf - 210 500 ns (VCE = 300 V, Io = 20 A, VaE = 15 V, RG(off) = 20 ) Turn-On Energy Eon - - 2.5 mJ (VCE = 300 V, Iq = 20 A, VgeE = 15 V, Rajon) = 47 2) Turn-Off Energy Eott - - 2.5 mJ (VCE = 300 V, I = 20 A, VE = 15 V, RG(off) = 20 ) Output Diode Forward Voltage (IF = 20 A) Ve - 1.3 2.0 Vv Output Diode Reverse Leakage Current IR - - 50 pA Thermal Resistance iGBT Rec - - 15 C/W Thermal Resistance Output Diode Rac - - 2.9 C/W SENSE RESISTOR Resistance Rsense - 5.0 - mQ Resistance Tolerance Riol -1.0 - +1.0 % TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) VE - 0.660 - Vv Forward Voltage Temperature Coefficient (@ Ip = 1.0 mA) TCyF - -1.95 - mv/C Motorola IGBT Device Data 3 Book= 00098579 24uF MM 6367255 0100224 117Book= 000985789 . MHPM7A20A60A Ic, COLLECTOR CURRENT (AMPS) lr, FORWARD CURRENT (AMPS) Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 8 25 20 Typical Characteristics ff Lf [ Ty = 125C Y 7 25C LY 0.2 0.4 0.6 0.8 1.0 1.2 Ve, FORWARD VOLTAGE (VOLTS) 1.4 Figure 1. Forward Characteristics Input Rectifler 1.6 20 16 4 1 2 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Characteristics, Ty = 25C Ig=10A 10 12 14 3 16 VGe, GATE-EMITTER VOLTAGE (VOLTS) Figure 5. CollectorEmitter Voltage versus GateEmitter Voltage 4 18 If, FORWARD CURRENT (AMPS) I, COLLECTOR CURRENT (AMPS) Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) o8 SB R3BR 8 8B = on oa 40 35 30 25 18 Qo Lif y / Lk [ Ty= 125F 25C | 02 04 08 O08 10 Vp FORWARD VOLTAGE (VOLTS) 1.2 Figure 2. Forward Characteristics FreeWheeling Diode 1 2 3 4 Voe, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.4 Figure 4. Forward Characteristics, Ty = 125C 3 40 60 80 Qg, TOTAL GATE CHARGE (nC) 100 Ig=20A Ty = 25C 120 140 1 Figure 6. Collector-Emitter and GateEmitter Voltages versus Total Gate Charge 8 6 4 2 0 60 1.6 eo 3 = Lu So 3 => fv Ww E = 4 uu = S w 2 4 24uF MM 6367255 0100225 053 Motorola IGBT Device DataMHPM7A20AG0A Typical Characteristics 1000 1000 z e iw = = Ww VCE = 300 V VgE=15V RE (off) = 20.2 Ty = 125C 100 100 0 10 20 30 40 50 0 10 20 30 40 50 Ic, COLLECTOR CURRENT (AMPS) Io, COLLECTOR CURRENT (AMPS} Figure 7. Inductive Swliching Times Figure 8. Inductive Switching Times versus Collector Current, Ty = 25C versus Collector Current, Ty = 125C 10000 10000 VcE = 300 V VgE=15V Ic =20A Ty= 125C z 2 = 1000 = 1000 - 5 100 10 100 1000 1009 100 1000 Re (ott) GATE RESISTANCE (OHMS) Rg (off). GATE RESISTANCE (OHMS) Figure 9. Inductive Switching Times Figure 10. Inductive Switching Times versus Gate Resistance, Ty = 25C versus Gate Resistance, Ty = 125C 250 10000 VcE = 300 V VGE=15V 200 RG (on) =47Q0 25C Ty =125C 1000 @ 150 z tu att Ty =125C = = Fe e + 100 100 50 0 10 0 10 20 30 40 50 10 100 1000 Ic, COLLECTOR CURRENT (AMPS) RG (on): GATE RESISTANCE (OHMS) Figure 12. Inductive Switching Times Figure 11. Inductive Switching Times versus Gate Reslstance versus Collector Current Motorola IGBT Device Data Book= 00098579 aur gg 4967255 0100226 TOT aMHPM7A20AG0A Typical Characteristics 10000 2 oo Ty =128C 4 cS} 1000 > ra Ls = ty Zz 100 = VCE = 300 V = VGE=15V uw? Rg (otf) = 20.2 10 0 10 20 30 40 50 Ic, COLLECTOR CURRENT (AMPS) Figure 13. TurnOff Energy Losses versus Collector Current 1000 Ty = 125C 25C 100 Ty = 125C 25C 10 PEAK REVERSE RECOVERY CURRENT I, (A) REVERSE RECOVERY TIME t,; (ns) ~dildt = 100 Aus 20 30 40 Ig, FORWARD CURRENT (AMPS) 10 Figure 15. Reverse Recovery Characteristics FreeWheeling Diode Woe = 15 V Voge =0V RG(on) = 47 Q Ty = 25C Ic, COLLECTOR CURRENT (AMPS) 200 400 600 800 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Reversed Blased Safe Operating Area (RBSOA) : VcE = 300 V Voe = 15 V lb =20A Eq: TURN-OFF ENERGY LOSSES (J) = oe o 100 RG (otf), GATE RESISTANCE (OHMS) = =) Figure 14. TurnOff Energy Losses versus Gate Resistance 3 eo C, CAPACITANCE (pF) 8 Cres 10 50 20 #630060 (400 50s 80s 70 )S 0sis10 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 Figure 16. Capacitance Variation 1.0 Ss = RESISTANCE (NORMALIZED) o So rt), EFFECTIVE TRANSIENT THERMAL 0.001 1.0 100 10 1000 t, TIME (ms) Figure 18. Thermal Response 6 Book= 00098579 2yF MM 6367255 0100ee7 eb Motorola IGBT Device Data |MHPM7A20AGO0A tt 90% 50% ton Mt toff d(on) > tr ld(ott} > 90% -L INVERTED r VCE 10% 90% JUL owl, INPUT, Vin 50% 10% J -_ PULSE WIDTH Figure 19. Inductive Switching Time Test Circult and Timing Chart Motorola IGBT Device Data Book= 00098579 . 24uF MM b3b7255 0100e2c8 4bcMHPM7A20AGO0A NOILVHS3LNI ADIAIG | asueg | ainjejadwie] pue | aBoug waund Uy 9poiq sanoayy comics | 2% | 1 eyeig eng | Ey ome of] a | | ! 1 o%s[] ( ASNAS dW3al NOLLWOISLLNAGI HASWNN Nid = [] a Lint a _Z & 093 4 a. sD 9 \ fH} ta [| Figure 20. Integrated Power Stage Schematic Motorola IGBT Device Data 24F MM b3b7255 0100229 774 = Book= 00098579 -MHPM7A20AGO0A PACKAGE DIMENSIONS m OQ < OTT Ann me | ae tH a AA 3PL A Nr, DETAIL Z The NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G. AA...) ARE TO THE CENTER OF THE LEAD. pot fee 1 J 7PL 25 PL Cea | 1 1 f == | DETAIL Z CASE 440-02 ISSUE A Motorola IGBT Device Data 9 Book= 00098579 C4UF MM 6367255 0100230 410