G E SOLID STATE sae genanrenmer rm np OP er 3875081 G E SOLID STATE Silicon Controlled Rectifiers O1 ef 3875081 OOL7718 7 i $2600B, S2600D, S2600M, S2600N High Voltage, Medium Current Silicon Controlled Rectifiers For Power Switching, Power Control and Ignition Applications Features: = 800V, 125 Deg. C Ts Operating = High dv/dt and di/at Capability = Low Switching Losses = High Pulse Current Capability = Low Forward and Reverse Leakage = Sipos Oxide Glass Multilayer Passivation System = Advanced Unisurface Construction = Precise lon Implanted Diffusion Source The $2600 series are high voltage, medium current silicon controlled rectifiers designed for switching AC and DC currents. The types within the series differ in their voltage ratings: the voltage ratings are identified by suffix letters in the type designations. All types utilize the low-profile TO-205 package. MAXIMUM RATINGS, Absolute-Maximum Values: oie 17718 DR 25-43 ; File Number 1693 TERMINAL DESIGNATIONS GATE ANODE CATHODE: sacs. 2724 Low-Profile TO-205 These Thyristors feature an advanced unisurface construc- tion with a multilayer glass passivation system for improved reliability performance at high junction operating tempera- tures. Their dv/dt, di/dt capability and low switching losses make them suitable for applications such as lighting, power- switching, motor speed control and crowbars. _$26008_ _S2600D_ _S2600M_ _S2600N_ VDRM oo cce cece cece eee ee ccc en eee reece eae eeneeeeee ens 200 400 600 sco OU VRRM .... see e reese 200 400 600 800 OV IT (RMS) (Tc = 65C) 7 A IT (av) (Te = 65C, @ = 180 Deg.) 0... .2 0. eee ense 45 A ITSM (for 1 full cycle) 100 A Gifdt .... 2c cee ee ee eee reece ees 200 Alps PT (at 8.3 ms) .. 40 As {at 1.5 ms) 30 As PGM (for 10s max.) 15 Ww PG (av) (Averaging time 10ms max.) ....0s-eeesees 05 Ww T Storage 2.2... cc cence nce eee e etn eee etree terees sae -65 to 150 __- G TS ccc ccc cet e ree teneaeeeeesseseeneeeeereneeeaneeegiee 65 to 125 . C 724 1261 F~-10G E SOLID STATE 3875081 GE SOLID STATE Oo. Dey 3375081 0017719 49 r O1E 17719 dp T-25/35 Silicon Controlled Rectifiers $2600B, $2600D, S2600M, S2600N ELECTRICAL CHARACTERISTICS, at Case Temperature (T,) = 25C Unless Otherwise Specified CHARACTERISTIC LIMITS SYMBOL $2600 FAMILY UNITS MIN. | TYP. | MAX. Repetitive Peak Forward and Reverse Blocking Current Rated VDRM and VRRM, Gate Open at TC = 125C [DROM _ - 50 uA IRROM _ _ 2 mA Forward On State Voltage (TM = 30A Gate Trigger Current (de) VD = 12 Vde RL = 30 Ohms IGT - 10 15 mA Gate Trigger Voltage (dc) VD = 12 Vde, RL = 30 Ohms VD = VDRM, RL = 500 Ohms, TC = 125C VGT - 1 15 Vv Holding Current VD = 12 Vdc, IT (initial) = 200mA Critical Rate of Rise of Off-State Voltage (Exponential Waveform) TG = 125C, Gate Open, VD = VORM $2600B, S2600D S2600M S2600N dv/dt - _ _ VipS - 150 _ - 125 _- = 75 _ Turn-On Time IT = 2A, VD = VDRM IG = 80mMA tgt _ 1.2 _ us Turn-Off Time VD = VDRM, TC = 75C, dv/dt = 20V/uS IT = 2A for 50 uS, di/dt = 10A/uS IG = 80mA at Turn-On Thermal Resistance Junction to Case Junction to Ambient ReJC -_ - 7 C/W RJA _ = 150 (NORMAL IZE0) IN | PL 12 La i bate elt edeaaaneteedttetenteal > 50 2a 2 50 we 100 425 JUNCTION TEMPERATURE (Td) -degC GATE TAIGGEA CURRENT (IGT) 4 Fig. 1 - Typical Gate Trigger Current Vs, Temperature (NORMALIZED) GATE TRIGGER VOLTAGE (VGT) JUNCTION TEMPERATURE (TJ) ~degl Fig. 2- Typical Gate Trigger Voltage Vs. Temperature 725 F-11ld G E SOLID STATE 3875081 G E SOLID STATE Siltcon Controlled Rectifiers O1 DE 3a7s081 go1u7720 5 I O1E 17720 dp 72-13 $2600B, S2600D, S2600M, S2600N 3 JT (INITIAL) =2008A BIN Z N BTN 3 IN p ~~ 2 [+] 2 te a 2 50 foo 125 JUNCTION TEMPERATURE (TJ) -dego THG28CAS1 Fig. 3 - Typical Holding Current Vs. Temperature 40 AT INDICATED CONCUCTION ANGLES 480 YA Y POWER DISSIPATION -WATTS i AVERAGE ON STATE CURRENT {ITav)-A Pos2soasi fete Fig. 5 - Maximum Power Dissipation Vs. Average Current 420 ~ PEAK SURGE CURRENT (ITS) ~A g ON STATE CURRENT (IT) =A ra a ON STATE VOLTAGE (VT}-V VIS@GOASL Fig. 4- Typical On State Voltage Vs. Current #2 8 2 8 & st o CASE TEMPERATURE (TC)dege 3 AVERAGE ON STATE CURRENT (ITav)-A TOS2604S1 Fig. 6- Maximum Gase Temperature Vs. Average Current NUMBER OF CYCLES OF SURGE DURATION ISS2S0AS41 Fig. 7 - Peak Surge Current Vs. Duration