HMC714LP5E - Hittite Microwave Corporation

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 126

HMC714LP5 / 714LP5E

DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

v07.1109

Features

Functional Diagram

Typical Applications

• Crest Factor (Peak-to-Average Power Ratio)

Measurement

• Envelope-to-Average Power Ratio Measurement

• Dual channel and channel difference

output ports

• Excellent Channel Matching and Channel

Isolation

• RF Signal Wave Shape & Crest Factor

Independent

• Supports Controller Mode[1]

• ± 1 dB Detection Accuracy to 3.9 GHz

• Input Dynamic Range -55 dBm to +15 dBm

• +5V Operation from -40° C to +85° C

• Excellent Temperature Stability

• Integrated Temperature Sensor

• Power-Down Mode

• 32 Lead 5x5mm SMT Package: 25mm

• Log -> Root - Mean - Square (RMS)

Conversion

• Transmitter Power Control

• Receiver Automatic Gain Control

• Antenna VSWR Monitor

• Received Signal Strength Indication (RSSI)

• Transmitter Signal Strength Indication (TSSI)

• Dual Channel wireless infrastructure radio

[1] For more information regarding controller mode operation, please contact your Hittite sales representative or email sales@hittite.com

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 127

General Description

Electrical Speci cations I, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 μF

The HMC714LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement

and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having

RMS values from -55 dBm to +15 dBm referenced to 50 Ω and large crest factors with no accuracy degradation.

Each RMS detection channel is fully speci ed for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. The

HMC714LP5E operates from a single +5V supply and provides two linear-in-dB detection outputs at the RMSA and

RMSB pins with scaled slopes of 37 mV/dB. The RMSA and RMSB channel outputs provide RMS detection perfor-

mance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite’s HMC614LPE RMS

Detector. The RMSA and RMSB outputs provide a read of average input signal power, or true-RMS power. Frequency

detection up to 5.8 GHz is possible, with excellent channel matching of less than 0.5 dB (for the single-ended con gu-

ration), over a wide range of input frequencies and with low temperature drift.

The HMC714LP5E also provides “channel difference” output ports via pins OUTP and OUTN, permitting measure-

ments of the input signal power ratio between the two power detection channels. These outputs may be used in

single-ended or differential con gurations. An input voltage applied to the VLVL input pin is used to set the common

mode voltage reference level for OUTP and OUTN. On the Hittite evaluation board, the VLVL pin is shorted to VREF2

output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL.

The HMC714LP5E also features INSA and INSB pins which provide a measurement of instantaneous signal power

normalized to average power level in each channel. Reading both the INSA/INSB and RMSA/RMSB output voltage

signals provides a very informative picture of the RF input signal; providing peak power, average power, peak-to-

average power, and RF wave shape.

The device also includes a buffered PTAT temperature sensor output with a temperature scaling factor of 2.2 mV/°C

yielding a typical output voltage of 600 mV at 0°C.

The HMC714LP5E operates over the -40 to +85°C temperature range, and is available in a compact, 32-lead 4x4 mm

leadless QFN package.

Parameter Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units

Dynamic Range (± 1 dB measurement error)

Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz

Differential Input Con guration, Channel A 68 68 69 72 71 66 47 42 dB

Differential Input Con guration, Channel B 68 69 69 71 71 64 45 41 dB

Input Signal Frequency 100 900 1800 ± 300 2200 ± 300 3600 ± 300 5800 ± 300 MHz

Single-Ended Input Con guration, Channel A 70 62 71 69 61 32 dB

Single-Ended Input Con guration, Channel B 70 62 71 69 61 33 dB

Channel Isolations

Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 5800 MHz

Input A to Input B Isolation

(Baluns Macom ETC1-1-13 at both channels) 72 70 69 53 51 56 48 47 dB

Input A to RMSB Isolation

(PINB = -45 dBm, RMSB = RMSBINB ±1 dB) 60+ 56 46 44 47 dB

Input B to RMSA Isolation

(PINA = -45 dBm, RMSA = RMSAINA ±1 dB) 60+ 58 46 44 48 dB

Input A to RMSB Isolation

(PINB = -40 dBm, RMSB = RMSBINB ±1 dB) 47 39 dB

Input B to RMSA Isolation

(PINA= -40 dBm, RMSA=RMSAINA ±1 dB) 43 28 dB

Input A to RMSB Isolation [1]

(PINB = -30 dBm, RMSB = RMSBINB ±1 dB) 38 dB

Input B to RMSA Isolation [1

(PINA= -30 dBm, RMSA=RMSAINA ±1 dB) 37 dB

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] Single-Ended Input Con guration with 5800 MHz tune

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 128

Parameter Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Typ. Units

Deviation vs Temperature: (Over full temperature range -40°C to 85°C. Deviation is measured from reference, which is CW input at 25°C

Differential Input Interface with 1:1 Balun Transformer (over full input frequency range) ± 0.6 dB

Wideband Single-Ended Input Interface suitable for input signal frequencies below 1000 MHz ± 0.5 dB

Tuned Single-Ended Input Interface Suitable for input signal frequencies 1000 MHz <f <3900 MHz ± 0.6 dB

Single-Ended Input Interface with 5800 MHz tune suitable for input signal frequencies 5500 MHz

< f < 6100 MHz ± 3.9 dB

Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power,

VTGT=2V)

Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz

256QAM (2 Mbps, 8dB Crest Factor) -0.13 -0.1 -0.1 -0.1 -0.1 -0.1 -0.3 -0.3 mV/dB

WCDMA Single Carrier

(Test Model 1 with 64DPCH) -0.3 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 dBm

WCDMA 2 Carrier

(Test Model 1 with 64DPCH) -0.5 -0.5 -0.4 -0.4 -0.3 -0.4 -0.4 -0.4 dBm

Modulation Deviation (Deviation measured from reference, which is measured with CW input at equivalent input signal power,

VTGT=1V)

Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz

256QAM (2 Mbps, 8dB Crest Factor) 0.1 0.1 0.1 0.1 0.1 0.1 -0.2 -0.1 dB

WCDMA Single Carrier

(Test Model 1 with 64DPCH) -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 dB

WCDMA 2 Carrier

(Test Model 1 with 64DPCH) -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 dB

Differential Input Con guration Logarithmic Slope and Intercept

Input Signal Frequency 100 500 900 1900 2200 3000 3500 3900 MHz

Logarithmic Slope 37.3 37.1 37 36 36 36.1 36.2 38.2 mV/dB

Logarithmic Intercept -70 -70 -69.5 -72 -71.5 -68.5 -68.5 -64 dBm

Max. Input Power at +-1dB Error 12 14 13 15 15 13 -5 -8 dBm

Min. Input Power at +-1dB Error -56 -55 -56 -56 -56 -52 -52 -49 dBm

Single Ended Input Con guration Logarithmic Slope and Intercept

Input Signal Frequency 100 900 1800 ± 300 2200 ± 300 3600 ± 300 5800 ± 300 MHz

Logarithmic Slope 38.2 37.9 36.6 35.4 36.8 52.5 mV/dB

Logarithmic Intercept -67 -67.5 -67 -67 -64.5 -44 dBm

Max. Input Power at +-1dB Error 14 6 15 15 12 0 dBm

Min. Input Power at +-1dB Error -56 -56 -56 -54 -49 -32 dBm

iPAR Feature: INS[A,B] outputs follow Amplitude Modulated Envelope Power, scaled to Average (RMS) Signal Power

INS[A,B] and IREF[A,B] are measured with Rext = 3.9 k and 50 k active scope probe

IREF[A,B] Output Voltage 1.6 V

INS[A,B] Output Voltage, with CW Input Signal (EAR = 1: Reference Condition)[1] 1.6 V

INS[A,B] Scaling Factor (SF) with VTGT = 2V 190 mV

INS[A,B] Scaling Factor (SF) with VTGT = 1V 95 mV

INS[A,B] Output: Variation over Temperature (-40C to 85C) ± 2 %

INS[A,B] Output: 3 dB Video BW 35 MHz

[1] EAR: Amplitude Modulated Envelope Signal Power-to-Average (RMS) Signal Power Ratio; EAR = 1 for CW signals

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

Electrical Speci cations II, TA = +25°C, VCCA = VCCB = VCCBIAS = 5V, CINT = 0.1 μF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 129

Logarithmic Error wrt to CW Response

@ 1900 MHz for Different Modulation

Schemes, VTGT= 1V [1]

RMS [A,B] vs. Pin with Different

Modulations @ 1900 MHz, VTGT= 1V [1]

Logarithmic Error wrt to CW Response

@ 1900 MHz for Different Modulation

Schemes, VTGT= 2V [1]

RMS [A,B] Error vs. Pin with Different

Modulations @ 1900 MHz, VTGT= 1V [1]

-2

-1.5

-1

-0.5

0.5

1.5

-60 -50 -40 -30 -20 -10 0 10

WCDMA 1 Carrier

WCDMA 2 Carrier

256QAM

ERROR (dB)

INPUT POWER (dBm)

0.5

1.5

2.5

3.5

-60 -50 -40 -30 -20 -10 0 10

Ideal

WCDMA1 Carrier

WCDMA 2 Carrier

256QAM

RMSA (RMSB) (V)

INPUT POWER (dBm)

0.2

0.4

0.6

0.8

1.2

-60 -50 -40 -30 -20 -10 0 10

WCDMA 1 Carrier

WCDMA 2 Carrier

256QAM

ERROR (dB)

INPUT POWER (dBm)

0.5

1.5

-60 -50 -40 -30 -20 -10 0 10

WCDMA 1 Carrier

WCDMA 2 Carrier

256QAM

ERROR (dB)

INPUT POWER (dBm)

Parameter Conditions Min. Typ. Max. Units

Differential Input Con guration

Input Network Return Loss up to 2.5 GHz[1] > 10 dB

Input Resistance between INPA and INNABetween pins 2 and 3 220 Ohms

Input Resistance between INPB and INNBBetween pins 6 and 7 220 Ohms

Input Voltage Range VDIFFINA = VINPA - VINNA and

VDIFFINB = VINPB-VINNB 2.25 V

RMSOUT [A,B] Output

Output Voltage Range RL = 1kOhm, CL = 4.7pF [2] 0.4 to 3.2 V

Openloop Output Voltage Range RMS-VSET disconnected for control

applications

0.4 to

Vcc-1 V

Source/Sink Current Compliance Measured with 900 MHz input RF signal at

-30 dBm power 10/1.1 mA

Output Slew Rate (rise/fall) With CINT=0, Cofs=0 110/6 106 V/sec

Table 3: Electrical Speci cations III,

HMC714LP5E Differential Con guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF,

unless otherwise noted

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] Differential Input Con guration with baluns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 130

Parameter Conditions Min. Typ. Max. Units

VSET [A,B] Outputs

Input Voltage Range [2] For control applications with nominal

slope/intercept settings 0.4 to 3.2 V

Input Resistance 15 kOhm

OUTP and OUTN Outputs

Output Voltage Range RL=1kOhm, CL=4.7pF [2] 1 to 3.9 V

Openloop Output Voltage Range OUTP-FBKA and OUTN-FBKB disconnected

for control applications

0.1 to

Vcc-0.9 V

Source/Sink Current Compliance Measured with 900 MHz input RF signal at

-30 dBm power 20/4.2 mA

VLVL, Common Mode Reference Level for OUT[P,N]

Voltage Range OUT[P,N]=FBK[A,B] 0 5 V

Input Resistance 6kOhm

VREF2, Voltage Reference Output

Output Voltage 2.43 V

Temperature Sensitivity 0.15 mV/°C

Source/Sink Current Compliance 5.5 / 2.6 mA

VREF3, Voltage Reference Output

Output Voltage 2.94 V

Temperature Sensitivity 0.15 mV/°C

Source/Sink Current Compliance 0.15 / 0.7 mA

TEMP, Temperature Sensor Output

Output Voltage measured at 0°C 0.6 V

Temperature Sensitivity 2.2 mV/°C

Source/Sink Current Compliance 1.7 / 0.5 mA

ENX Logic Input, Power Down Control

Input High Voltage 0.7*VCC V

Input Low Voltage 0.3*VCC V

Input Capacitance 0.5 pF

Power Supply

Supply Voltage 4.5 5 5.5 V

Supply Current with no input power 115 mA nominal at -40°C; 153mA nominal

at 85°C 138 mA

Supply Current with 0dBm at one channel 128 mA nominal at -40°C; 166mA nominal

at 85°C 150 mA

Supply Current with 0dBm at both

channels 164 mA

Standby Mode Supply Current 6.5 mA

[1] Performance of differential input con guration is limited by the balun. Baluns used are M/A-COM ETC1-1-13 speci ed 4.5 MHz to

3000 MHz

[2] For nominal slope/intercept setting, please see application section to change this range

Table 3: Electrical Speci cations III,

HMC714LP5E Differential Con guration, TA=25°C, VCCA = VCCB = VCCBIAS = 5V, Cint = 0.1 uF,

unless otherwise noted

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 131

[1] CW Input Waveform, Differential Input Con guration with baluns

RMSA & Error vs. Pin @ 500 MHz [1] RMSB & Error vs. Pin @ 500 MHz [1]

RMSA & Error vs. Pin @ 900 MHz [1] RMSB & Error vs. Pin @ 900 MHz [1]

RMSA & Error vs. Pin @ 100 MHz [1] RMSB & Error vs. Pin @ 100 MHz [1]

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 132

RMSA & Error vs. Pin @ 2200 MHz [1]

RMSA & Error vs. Pin @ 3000 MHz [1]

RMSB & Error vs. Pin @ 2200 MHz [1]

RMSB & Error vs. Pin @ 3000 MHz [1]

RMSA & Error vs. Pin @ 1900 MHz [1] RMSB & Error vs. Pin @ 1900 MHz [1]

[1] CW Input Waveform, Differential Input Con guration with baluns

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 133

[1] CW Input Waveform, Differential Input Con guration with baluns

RMSA & Error vs. Pin @ 3500 MHz [1] RMSB & Error vs. Pin @ 3500 MHz [1]

RMSA & Error vs. Pin @ 3900 MHz [1] RMSB & Error vs. Pin @ 3900 MHz [1]

OUT [P,N] & Error vs. Pin @ 100 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 500 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSB +25C

RMSB +85C

RMSB - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSB (V)

ERROR (dB)

INPUT POWER (dBm)

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 134

OUT [P,N] & Error vs. Pin @ 3000 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 3900 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 3500 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 900 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 2200 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

OUT [P,N] & Error vs. Pin @ 1900 MHz,

INPA Power Swept, INPB Fixed Power @

-25 dBm [1]

[1] CW Input Waveform, Differential Input Con guration with baluns

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N] (V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40 C

Out N Err +25C

Out N Err +85C

Out N Err -40 C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40 C

Out N Err +25C

Out N Err +85C

Out N Err -40 C

OUT[P,N] (V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

-4

-2

-60 -50 -40 -30 -20 -10 0 10

Out P Err +25C

Out P Err +85C

Out P Err -40C

Out N Err +25C

Out N Err +85 C

Out N Err -40C

OUT[P,N](V)

ERROR (dB)

INPUT POWER (dBm)

Out P

Out N

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 135

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 500 MHz [1]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 900 MHz [1]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 1900 MHz [1]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 3000 MHz [1]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 2200 MHz [1]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 100 MHz [1]

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] CW Input Waveform, Differential Input Con guration. Baluns selected for matching performance, mismatch between channels is limited by the

input baluns.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 136

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 3900 MHz [1][2]

RMSA-RMSB, Channel Matching vs. Pin

over Temperature @ 3500 MHz [1][2]

Interference to an Input Signal (INB

Power Fixed) with Interfering Signal on

the other Channel (INA Power Swept) [1][3]

Interference to an Input Signal (INA

Power Fixed) with Interfering Signal on

the other Channel (INB Power Swept) [1][3]

RMSA Out vs. Pin over Frequency,

with SE Wideband Tune [1]

RMSA Out Error vs. Pin over Frequency,

with SE Wideband Tune [1]

-80

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-80

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

+25C

+85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-30 -25 -20 -15 -10 -5 0 5 10 15

0.5GHz

0.9GHz

1.9GHz

2.2GHz

3.0GHz

3.9GHz

Error (dB)

Input Power (dBm)

Channel B fixed at

-45dBm for f<3GHz

-40dBm for f=3.9GHz

-30 -25 -20 -15 -10 -5 0 5 10 15

0.5GHz

0.9GHz

1.9GHz

2.2GHz

3.0GHz

3.9GHz

Error (dB)

Input Power (dBm)

Channel A fixed at

-45dBm for f<3GHz

-40dBm for f=3.9GHz

0.5

1.5

2.5

3.5

-60 -50 -40 -30 -20 -10 0 10

Ideal

100MHz

300MHZ

500MHz

700MHz

900MHz

RMSA(V)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

100MHz

300MHz

500MHz

700MHz

900MHz

ERROR (dB)

INPUT POWER (dBm)

[1] CW Input Waveform

[2] Differential Input Con guration. Baluns selected for matching performance, mismatch between channels is limited by the input baluns.

[3] Differential Input Con guration with baluns

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 137

RMSA-RMSB, Channel Matching vs.

Pin over Frequency, with SE Wideband

Tune [1]

RMSA-RMSB, Channel Matching vs.

Pin over Temperature @ 500 MHz, with SE

Wideband Tune [1]

RMSA Out & Error vs. Pin over

Temperature @ 500 MHz with SE Wide-

band Tune [1]

RMSA Out vs. Pin over Frequency, with

2200 MHz SE Tune [1]

RMSA Out Error vs. Pin over Frequency

with 2200 MHz SE Tune [1]

RMSA-RMSB, Channel Matching vs. Pin

over Frequency, with 2200 MHz SE Tune [1]

[1] CW Input Waveform

-60

-40

-20

-50 -40 -30 -20 -10 0 10

100MHz

300MHz

500MHz

700MHz

900MHz

RMSA-RMSB (mV)

INPUT POWER (dBm)

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

0.5

1.5

2.5

3.5

-60 -50 -40 -30 -20 -10 0 10

Ideal

1900MHz

2000MHZ

2100MHz

2200MHz

2300MHz

2400MHz

2500MHz

RMSA (V)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

1900MHz

2000MHz

2100MHz

2200MHz

2300MHz

2400MHz

2500MHz

ERROR (dB)

INPUT POWER (dBm)

-60

-40

-20

-50 -40 -30 -20 -10 0 10

1900MHz

2000MHz

2100MHz

2200MHz

2300MHz

2400MHz

2500MHz

RMSA-RMSB (mV)

INPUT POWER (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 138

RMSA-RMSB, Channel Matching vs. Pin

over Temperature, with 2200 MHz SE

Tune [1]

RMSA Out & Error vs. Pin

over Temperature @ 2200 MHz, with

2200 MHz SE Tune [1]

RMSA Out vs. Pin over Frequency, with

1800 MHz SE Tune [1]

RMSA-RMSB, Channel Matching vs.

Pin over Frequency, with 1800 MHz SE

Tune [1]

RMSA Out vs. Pin over Frequency, with

3600 MHz SE Tune [1]

RMSA Out Error vs. Pin over Frequency,

with 1800 MHz SE Tune [1]

[1] CW Input Waveform

-60

-40

-20

-55 -45 -35 -25 -15 -5 5 15

85C

-40C

RMSA-RMSB (mV)

Input Power (dBm)

0.5

1.5

2.5

3.5

-60 -50 -40 -30 -20 -10 0 10

Ideal

1500MHz

1600MHZ

1700MHz

1800MHz

1900MHz

2000MHz

2100MHz

RMSA (V)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

1500MHz

1600MHz

1700MHz

1800MHz

1900MHz

2000MHz

2100MHz

ERROR (dB)

INPUT POWER (dBm)

-60

-40

-20

-50 -40 -30 -20 -10 0 10

1500MHz

1600MHz

1700MHz

1800MHZ

1900MHz

2000MHz

2100MHz

RMSA-RMSB (mV)

INPUT POWER (dBm)

0.5

1.5

2.5

3.5

-60 -50 -40 -30 -20 -10 0 10

Ideal

3300MHz

3400MHZ

3500MHz

3600MHz

3700MHz

3800MHz

3900MHz

RMSA (V)

INPUT POWER (dBm)

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

Ideal

RMSA +25C

RMSA +85C

RMSA - 40C

ERR +25C

ERR +85C

ERR - 40C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 139

RMSA Out Error vs. Pin over Frequency,

with 3600 MHz SE Tune [1]

RMSA Out vs. Pin over

Frequency, with 5800 MHz SE Tune [1]

RMSA Output Error vs. Pin over

Frequency, with 5800 MHz SE Tune [1]

RMSA - RMSB, Channel Matching vs. Pin

over Temperature, with 5800 MHz SE Tune [1]

RMSA - RMSB, Channel Matching vs. Pin

over Frequency, with 3600 MHz SE Tune [1]

RMSA - RMSB, Channel Matching vs. Pin

over Frequency, with 5800 MHz SE Tune [1]

-4

-3

-2

-1

-60 -50 -40 -30 -20 -10 0 10

3300MHz

3400MHz

3500MHz

3600MHz

3700MHz

3800MHz

3900MHz

RMSA ERROR (dB)

INPUT POWER (dBm)

0.5

1.5

2.5

3.5

-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15

Ideal

5500 MHz

5600 MHZ

5700 MHz

5800 MHz

5900 MHz

6000 MHz

6100 MHz

RMSA (V)

INPUT POWER (dBm)

-60

-40

-20

-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15

5500 MHz

5600 MHz

5700 MHz

5800 MHZ

5900 MHz

6000 MHz

6100 MHz

RMSA-RMSB (mV)

INPUT POWER (dBm)

-60

-40

-20

-50 -40 -30 -20 -10 0 10

3300MHz

3400MHz

3500MHz

3700MHz

3600MHZ

3800MHz

3900MHz

RMSA-RMSB (mV)

INPUT POWER (dBm)

-4

-3

-2

-1

-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15

5500 MHz

5600 MHz

5700 MHz

5800 MHz

5900 MHz

6000 MHz

6100 MHz

ERROR (dB)

INPUT POWER (dBm)

-60

-40

-20

-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15

+25 C

+85 C

-40 C

RMSA-RMSB (mV)

INPUT POWER (dBm)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] CW Input Waveform

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 140

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] CW Input Waveform [2] Differential Input Con guration with baluns

Intercept vs. Frequency Over Supply

Voltage [1] [2]

Intercept vs. Frequency Over

Temperature [1] [2]

Slope vs. Frequency Over Temperature[1] [2]

Slope vs. Frequency Over Supply

Voltage [1] [2]

0 500 1000 1500 2000 2500 3000 3500 4000

4.5V

5.0V

5.5V

SLOPE (mV/dB)

FREQUENCY (MHz)

0 500 1000 1500 2000 2500 3000 3500 4000

+25C

+85C

-40C

SLOPE (mV/dB)

FREQUENCY (MHz)

-80

-75

-70

-65

-60

-55

-50

0 500 1000 1500 2000 2500 3000 3500 4000

4.5V

5.0V

5.5V

INTERCEPT (dBm)

FREQUENCY (MHz)

-80

-75

-70

-65

-60

-55

-50

0 500 1000 1500 2000 2500 3000 3500 4000

+25C

+85C

-40C

INTERCEPT (dBm)

FREQUENCY (MHz)

RMSA Out & Error vs. Pin Over Temperature

@ 5800 MHz, 5800 MHz SE Tune [1]

-4

-3

-2

-1

-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15

Ideal

RMSA +25 C

RMSA +85 C

RMSA -40 C

ERR +25 C

ERR +85 C

ERR -40 C

RMSA (V)

ERROR (dB)

INPUT POWER (dBm)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 141

RMS Error vs. Crest Factor Over VTGT [1] Input Return Loss [1] [2]

[1] Differential Input Con guration with baluns

[2] CW Input Waveform

[3] RF Input Power @ -20 dBm

-3

-2.5

-2

-1.5

-1

-0.5

0 2 4 6 8 10 12 14

VTGT=0.5V

VTGT=1V

VTGT=2V

VTGT=3V

CREST FACTOR (dB)

RMSA/RMSB ERROR (dB)

iPAR Output & Input RF Signal Envelope

vs. Time for an Input Crest Factor of

9.03 dB @ 1900 MHz [1] [3]

iPAR Output with an Input Crest Factor of

9.03 dB, Channel [A,B] @ 1900 MHz [1] [3]

iPAR Output & Input RF Signal Envelope

vs. Time for an Input Crest Factor of

12.04 dB @ 1900 MHz [1] [3]

iPAR Output with an Input Crest Factor of

12.04 dB, Channel [A,B] @ 1900 MHz [1] [3]

1.5

2.5

0 1.6 3.2 4.8 6.4 8

CHANNEL A

CHANNEL B

INS [A,B] (V)

TIME (us)

1.5

2.5

012345

CHANNEL A

CHANNEL B

INS [A,B] (V)

TIME (us)

0.25

0.75

1.25

1.75

2.25

-0.5

0.5

1.5

012345

INS [A,B] (V)

INPUT RF SIGNAL ENVELOPE (V)

Time (usec)

IPAR Output

Input RF Signal Envelope

0.4

0.8

1.2

1.6

2.4

2.8

-1.4

-0.6

0.2

1.8

2.6

3.4

4.2

012345678

INS [A,B] (V)

INPUT RF SIGNAL ENVELOPE (V)

TIME (μs)

IPAR Output

Input RF Signal Envelope

-40

-35

-30

-25

-20

-15

-10

-5

01234

+85C

RETURN LOSS (dB)

FREQUENCY (GHz)

Defined in large part by balun:

4.5MHz to 3000MHz

M/A-Com balun#ETC1-1-113;

-40C

25C

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 142

iPAR Output with an Input Crest Factor of

9.03 dB, Channel A over Temp

@ 1900 MHz [1] [2]

iPAR Output with an Input Crest Factor of

12.04 dB, Channel B over Temp

@ 1900 MHz [1] [2]

iPAR Output with an Input Crest Factor of

12.04 dB, Channel A over Temp

@ 1900 MHz [1] [2]

iPAR Output with an Input Crest Factor of

9.03 dB, Channel B over Temp

@ 1900 MHz [1] [2]

iPAR Feature Peak-to-Average Power

Detection Con guration (REXT = 500kΩ,

CEXT = 100 nF) [2]

iPAR Feature Peak-to-Average Power

Detection Con guration (CEXT = 100 nF) [2]

1.5

2.5

3.5

0 1.6 3.2 4.8 6.4 8

+25C

+85C

-40C

INSB (V)

TIME (us)

1.5

2.5

012345

+25C

+85C

-40C

INSA (V)

TIME (us)

1.5

2.5

3.5

0 1.6 3.2 4.8 6.4 8

+25C

+85C

-40C

INSA (V)

TIME (us)

1.5

2.5

012345

+25C

+85C

-40C

INSB (V)

TIME (us)

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

123456789101112

INSA

Linear Fit

PEAK TO AVERAGE POWER RATIO (PAR)

INSA (V)

VTGT=2V

VTGT=1V

Single Tone (CW) Inputs

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

2 3 4 5 6 7 8 9 10 11 12 13 14

VTGT=2V Rext=100kohm

VTGT=2V Rext=500kohm

VTGT=1V Rext=500kohm

INPUT CREST FACTOR (dB)

INSA (V)

256QAM (1Mbps)

Crest Factor~7.8dB

Single Tone

(CW) Inputs

[1] RF Input Power @ -20 dBm [2] Differential Input Con guration with baluns

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 143

Output Response

Rise Time @ 1900 MHz, CINT [A,B] = Open [1]

Output Response

Rise Time @ 1900 MHz, CINT [A,B] = 10 nF [1]

Output Response

Fall Time @ 1900 MHz, CINT [A,B] = Open [1]

Output Response

Fall Time @ 1900 MHz, CINT [A,B] = 10 nF [1]

0.5

1.5

2.5

0 20 40 60 80 100 120 140 160 180 200

10dBm

0dBm

-10dBm

-20dBm

-30dBm

RMS[A,B] (V)

TIME (μs)

0.5

1.5

2.5

012345678910

10dBm

0dBm

-10dBm

-20dBm

-30dBm

RMS[A,B] (V)

TIME (μs)

0.5

1.5

2.5

0 5 10 15 20 25 30 35 40 45 50

10dBm

0dBm

-10dBm

-20dBm

-30dBm

RMS[A,B] (V)

TIME (μs)

0.5

1.5

2.5

3.5

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

10dBm

0dBm

-10dBm

-20dBm

-30dBm

RMS[A,B] (V)

TIME (μs)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] Differential Input Con guration with baluns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 144

Outline Drawing

Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]

HMC714LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H714

XXXX

HMC714LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H714

XXXX

[1] Max peak re ow temperature of 235 °C

[2] Max peak re ow temperature of 260 °C

[3] 4-Digit lot number XXXX

Package Information

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS].

3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.

7. REFER TO HMC APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Supply Voltage 5.6V

RF Input Power 20 dBm

Channel / Junction Temperature 125 °C

Continuous Pdiss (T = 85°C)

(Derate 50 mW/°C above 85°C) 2 Watts

Thermal Resistance (Rth)

(junction to ground paddle) 20 °C/W

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

ESD Sensitivity (HBM) Class 1A

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 145

Pin Descriptions

Pin Number Function Description Interface Schematic

1, 5, 8

VCCA,

VCCBIAS,

VCCB

Bias Supply. Connect supply voltage to these pins

with appropriate  ltering.

GND Package bottom has an exposed metal paddle

that must be connected to RF/DC ground.

2, 3

6, 7

INPA, INNA

INNB, INPB

Channel A RF Inputs, Connect RF to INNA

through a 1:1 balun for differential con guration.

Channel B RF Inputs, Connect RF to INNB

through a 1:1 balun for differential con guration.

4ENX

Disable pin. Connect to GND for normal

operation. Applying voltage V > 0.8 Vcc

will initiate power saving mode.

9, 32 COFB, COFA

Input high pass  lter capacitor. Connect to

common via a capacitor to determine 3 dB point of

input signal high-pass  lter. See Application Note

section.

10, 11 N/C These pins are not connected internally.

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 146

Pin Descriptions (Continued)

Pin Number Function Description Interface Schematic

12 VREF2 2.5V Reference voltage output.

13 VLVL Reference level input for OUTP and OUTN.

Connect to VREF for normal operation.

14, 27 CINTB,

CINTA

Connection for ground referenced loop  lter

integration capacitor for channels A and B.

See application schematic.

15, 26 IREFB,

IREFA

Reference DC Voltage for INSB - INSA to replicate

voltage at no input modulation case.

16, 25 INSB, INSA Instantaneous Power Output for channels A and B

continuous tracking of Input Power Envelope.

17, 26 VSETB,

VSETA VSET inputs. Set point inputs for controller mode.

18, 23 RMSB,

RMSA

Logarithmic outputs that convert the input power

to a DC level for channel A and channel B.

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 147

Pin Descriptions (Continued)

Pin Number Function Description Interface Schematic

19 FBKB Feedback through 3.5K Ohms to the negative

terminal of the integrated Op Amp driving OUTN

20 OUTN

Output providing the difference of RMS outputs

using an Op Amp. For normal operation,

connected to FBKB to provide the function:

OUTN = RMSB - RMSA + VLVL

21 OUTP

Output providing the difference of RMS outputs

using an Op Amp. For normal operation,

connected to FBKA to provide the function:

OUTP = RMSA - RMSB + VLVL

22 FBKA Feedback through 3.5K Ohms to the negative

terminal of the integrated Op Amp driving OUTP

28 VTGT

This voltage input changes the logarithmic

intercept point. Use of lower target voltage

reduces error for complex signals with large crest

factors. Normally connected to VREF3 via resistor

voltage divider. See Application Note section.

29 VREF3 3V Reference voltage output for use with VTGT.

See Application Note section.

30 TEMP Temperature sensor output. See Application Note

section.

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 148

Evaluation PCB - Wideband Single-Ended

The circuit board used in the  nal application should

use RF circuit design techniques. Signal lines should

have 50 ohm impedance while the package ground

leads and exposed paddle should be connected

directly to the ground plane similar to that shown. A

sufficient number of via holes should be used to con-

nect the top and bottom ground planes. The evalua-

tion circuit board shown is available from Hittite upon

request.

List of Materials for Evaluation PCB 121864 [1]

Item Description

J2, J5, J9, J11,

J13, J14, J16, J18 SMA Connector

J3, J4, J6 - J8,

J10, J17, J19 - J25 DC Pin

C1, C2, C5, C6, C9, C28 1 nF Capacitor, 0402 Pkg.

C3, C8, C10, C29 100 pF Capacitor, 0402 Pkg.

C4, C7, C11, C26, C27, C30 100 nF Capacitor, 0402 Pkg.

R1, R3 68 Ohm Resistor, 0402 Pkg.

R2 10K Ohm Resistor, 0402 Pkg.

R4, R7, R15 - R18, R27,

R31, R34 0 Ohm Resistor, 0402 Pkg.

R10, R12, R20, R23 3.92K Ohm Resistor, 0402 Pkg.

R24 61.9K Ohm Resistor, 0402 Pkg.

R25 33K Ohm Resistor, 0402 Pkg.

R26 1K Ohm Resistor, 0402 Pkg. [1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

Item Description

U1 HMC714LP5(E) Single-Ended

Dual RMS Power Detector

PCB [2] 121862 Evaluation PCB

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 149

Application Circuit - Wideband Single-Ended

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 150

Evaluation PCB - Differential

The circuit board used in the  nal application should

use RF circuit design techniques. Signal lines should

have 50 ohm impedance while the package ground

leads and exposed paddle should be connected

directly to the ground plane similar to that shown. A

sufficient number of via holes should be used to con-

nect the top and bottom ground planes. The evalua-

tion circuit board shown is available from Hittite upon

request.

List of Materials for Evaluation PCB 120339 [1]

Item Description

J2, J5, J9, J11,

J13, J14, J16, J18 SMA Connector

J3, J4, J6 - J8,

J10, J17, J19 - J25 DC Pin

C1, C2, C5, C6, C9, C28 1 nF Capacitor, 0402 Pkg.

C3, C8, C10, C29 100 pF Capacitor, 0402 Pkg.

C4, C7, C11, C26,

C27, C30 100 nF Capacitor, 0402 Pkg.

R1, R3 68.1 Ohm Resistor, 0402 Pkg.

R2 10K Ohm Resistor, 0402 Pkg.

R4, R7, R15 - R18, R27 0 Ohm Resistor, 0402 Pkg.

R10, R12, R20, R23 3.92K Ohm Resistor, 0402 Pkg.

R24 61.9K Ohm Resistor, 0402 Pkg.

R25 33K Ohm Resistor, 0402 Pkg.

R26 1K Ohm Resistor, 0402 Pkg. [1] Reference this number when ordering complete evaluation PCB

[2] Circuit Board Material: Rogers 4350

Item Description

T1, T2 Transformer, E-Series RF 1:1,

U1 HMC714LP5(E) Differential

Dual RMS Power Detector

PCB [2] 120336 Evaluation PCB

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 151

Application Circuit - Differential

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 152

Application Information

Principle of Operation

Monolithic true-RMS detectors are in-effect analog calculators,

calculating the RMS value of the input signal, unlike other

types of power detectors which are designed to respond to the

RF signal envelope. At the core of an RMS detector is a full-

wave recti er, log/antilog circuit, and an integrator. The RMS

output signal is directly proportional to the logarithm of the

time-averaged VIN2. The bias block also contains temperature

compensation circuits which stabilize output accuracy over the

entire operating temperature range. The DC offset cancellation

circuit actively cancels internal offsets so that even very small

input signals can be measure accurately.

The iPAR feature tracks the RF envelope and provides a signal

which is directly proportional to signal power, normalized to

average real power calculated by the RMS circuitry. Reading

both the iPAR and RMS output voltage signals provides a

very informative picture of the RF input signal: peak power,

average power, peak-to-average power, and RF wave-shape.

Simultaneous measurement of signal power and average

power is essential for taking full advantage of a receive signal

chain’s available dynamic range, while avoiding saturation, or

to maximize transmitter efficiency.

Where ß is op-amp gain set via resistors on the Vset pin.

Pin = VRMS/[log-slope]+[log-intercept], dBm

VRMSOUT = 1 ln(ßkG2∫VIN2dt)

ViPAR = m VIN2 -1 + iREF

ßk ∫VIN2dt

-65 -55 -45 -35 -25 -15 -5 5 15

Measured

Ideal

RMS OUTPUT VOLTAGE (V)

INPUT POWER (dBm)

VRMS vs. PIN

0.25

0.75

1.25

1.75

2.25

-0.5

0.5

1.5

012345

INS [A,B] (V)

INPUT RF SIGNAL ENVELOPE (V)

Time (usec)

IPAR Output

Input RF Signal Envelope

iPAR Output & Input RF Signal Envelope

vs. Time for an Input Crest Factor of

9.03 dB @ 1900 MHz [1]

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] Differential Input Con guration with baluns, RF Input Power @ -20 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 153

The HMC714LP5E integrates two HMC614LP4E RMS detection channels with shared bias and control circuitry. The

linear-in-dB channel outputs at the RMSA and RMSB pins provide RMS detection performance in terms of dynamic

range, temperature stability, and logarithmic linearity similar to Hittite’s HMC614LP4E with improved frequency

detection range extending up to 5.8 GHz. Proprietary design techniques enable extremely good matching between

channels (within less than 0.5 dB with single-ended cn guration) over a wide range of input frequencies with low

temperature drift.

HMC714LP5E als o provides “channel difference” outputs vi a pins OUTP and OUT N that can be either used dif ferentially

or single-ended. The VLVL input is used to set the common mode reference level for those outputs. On the Hittite

evaluation board, the VLVL pin is shorted to VREF2 output to provide a nominal bias voltage of 2.5V; but any external

bias voltage can be used to set VLVL.

A ratio of two signal powers is a simple difference in the log domain. The OUTP and OUTN outputs can provide a

direct read of input signal power ratio between the signals presented to the two power detection channels.

When OUTP is connected directly to FBKA

OUTP = RMSA - RMSB + VLVL

And when OUTN is connected directly to FBKB

OUTN = RMSB - RMSA+VLVL

With the channels of HMC714LP5E having very low mismatch, channel outputs RMSA and RMSB track very closely

over temperature. The difference operation also allows the OUTP and OUTN to reject common-mode changes in

channels A and B.

HMC714LP5E also features iPAR output on each power detector. The RMSA and RMSB outputs provide a read of

average input signal (i.e True RMS power). The INSA and INSB pins are iPAR outputs providing a simultaneous read

of input signal Peak Power, Peak-to-Average Ratio, and RF waveshape. Refer to the section under “iPAR – Envelope

Power Normalized To Average Power” for more details on iPAR measurements.

0.5

1.5

2.5

3.5

-65 -55 -45 -35 -25 -15 -5 5 15

OUTP

OUTN

RMSA

RMSB

CHANNEL A INPUT POWER (dBm)

OUTPUT (V)

Channel Difference Outputs @ 1900 MHz,

Channel A Power Swept,

Channel B @ -25 dBm

Dual RMS Detection Channels

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 154

Single channel RMS detectors exhibit part-to-part

variations that tend to complicate simultaneous power

readings. Simultaneous signal power measurements are

particularly useful for automatic gain/level control and VSWR

measurements. When separate power detectors are used, the

lack of an accurate match between the power detectors will

produce measurement errors. Calibration and compensation

methods are required to counteract the differences between

the separate power detectors. The Dual RMS detector package

greatly simpli es that activity, and will reliably produce more

accurate measurements.

The HMC714LP5E provides industry leading channel

matching performance with the use of proprietary techniques.

The channel mismatch is typically less than 20 mV over the

speci ed temperature and frequency range when the single-

ended input interface is used. Hittite “differential” evaluation

kits use M/A Com’s ETC1-1-13 balun, which are designed

to work up to 3 GHz. At frequencies lower than 3 GHz, the

mismatch between the two input baluns cause a larger variation

between the channels when compared to the single-ended

interface (typically ±25 mV up to 900 MHz and ±50 mV up to

2700 MHz). The input impedance mismatch presented by the

balun at signal frequencies beyond 3 GHz will further increase

the channel-to-channel variation. The “single-ended” input

interface does not have this limitation. The “single-ended”

interface can utilize the full input signal bandwidth of the power

detector; however the “single-ended” input interface is tuned.

The differential or balun input interface is best suited to very

wideband power measurements (100 MHz to 3 GHz), whereas

the single-ended input interface is best suited to signal power

measurement over bandwidths up to ±300 MHz (for ±1 dB

error tolerance) in the hole RF frequency range.

-0.16

-0.12

-0.08

-0.04

0.04

0.08

0.12

0.16

-50 -40 -30 -20 -10 0 10

0.1 GHz

0.5 Ghz

0.9 GHz

1.4 GHz

1.9 GHz

INPUT POWER (dBm)

RMSA-RMSB (V)

Using wideband single-ended input interface

-0.16

-0.12

-0.08

-0.04

0.04

0.08

0.12

0.16

-50 -40 -30 -20 -10 0 10

INPUT POWER (dBm)

RMSA-RMSB (V)

Using balun input interface

-0.16

-0.12

-0.08

-0.04

0.04

0.08

0.12

0.16

-50 -40 -30 -20 -10 0 10

3.3 GHz

3.4 GHz

3.5 GHz

3.6 GHz

3.7 GHz

3.8 GHz

3.9 GHz

INPUT POWER (dBm)

RMSA-RMSB (V)

Using single-ended interface tuned for 3.6 GHz

-0.16

-0.12

-0.08

-0.04

0.04

0.08

0.12

0.16

-50 -40 -30 -20 -10 0 10

INPUT POWER (dBm)

RMSA-RMSB (V)

Using balun input interface

Channel Matching [RMSA-RMSB] in

Wideband Single Ended Con guration

Channel Matching [RMSA-RMSB]

@ 900 MHz

Channel Matching [RMSA-RMSB] in

Single Ended Con guration tuned

@ 3.6 GHz

Channel Matching [RMSA-RMSB]

@ 3.5 GHz

Channel Matching

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 155

Channel isolation/interference is grouped into two

categories:

On-chip inter-channel interference, and

Off-chip inter-channel interference.

Off-chip interference between channels should be

considered, especially at small signal levels, since

HMC714LP5E is capable of detecting a signal over a

very wide dynamic range (70 dB+). There are two main

mechanisms through which the interference between the

channels may affect measurement accuracy. The  rst

one is the direct coupling of the RF signal from one RF

channel input to the other RF channel input. Baluns on the

detector inputs usually contribute to inter-channel coupling,

as does PC board design and the quality of the soldered

connections.

On-chip inter-channel interference, herein referred to as

“input-output channel isolation”, usually manifests itself as

drift on one detector output due to a relatively strong signal

present at the other detector input. Quantitatively, the input-

output channel isolation is de ned as the difference between

the input power levels at both channels when the interfering

(higher power level) channel causes a 1 dB measurement

drift in the interfered (lower power level) channel. Worst

case channel interference occurs when one channel has an

input signal level just over its detection threshold.

Input-Output Channel isolation for HMC714LP5E is:

55+ dB input-output isolation at 900 MHz

45 dB input-output isolation up to 2.7 GHz

35 dB input-output isolation up to 5.8 GHz.

If the same signal frequency is injected into both channels

for this Input-Output Channel Isolation measurement, the

interference will manifest as a phase delay. A slight offset in

signal frequency between the two channels can be seen as a

ripple at the output of the channel with the lower power level

applied at its input. Peaks in the output ripple correspond

to the worst-case phase shift for input-output interference.

The frequency of the output ripple will be equal to the “beat”

frequency between the two channels. The magnitude of

the output ripple will depend on the integration and offset

capacitors connected to CINT and COFS pins, respectively.

The output ripple is reduced by increasing the value of

the integration capacitance (CINT), thereby decreasing

the integrator bandwidth. The data was collected using a

100kHz offset between the channels.

0.5

1.5

2.5

-30 -25 -20 -15 -10 -5 0 5 10 15

0.5 GHz

0.9 GHz

1.9 GHz

2.7 GHz

3.9 GHz

5.8 GHz

CHANNEL B INPUT POWER (dBm)

ERROR IN CHANNEL A (dB)

0.5

1.5

2.5

-30 -25 -20 -15 -10 -5 0 5 10 15

0.5 GHz

0.9 GHz

1.9 GHz

2.7 GHz

3.9 GHz

5.8 GHz

CHANNEL A INPUT POWER (dBm)

ERROR IN CHANNEL B (dB)

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

Input A->Input B

Input B->Input A

FREQUENCY (GHz)

ISOLATION (dB)

Input to Input Isolations with

ETC1-1-13 Baluns

Interference to an Input Signal (INB

Power Fixed) with Interfering Signal on

the other Channel (INA Power Swept) [1]

Interference to an Input Signal (INA

Power Fixed) with Interfering Signal on

the other Channel (INB Power Swept) [1]

Channel Isolation/Interface

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] CW Input Waveform, Differential Input Con guration with baluns

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 156

The RF inputs can be connected in either a differential or single-ended con guration: see “RF Input Interface” section

for details on each input con guration. With the appropriate input tuning components, the part can provide the full

performance with a single-ended input.

The RMSA & RMSB output signals are typically connected directly to VSETA & VSETB inputs, providing a Pin->VRMS

transfer characteristic slope of 36.5 mV/dBm at both channels; however the RMS output can be re-scaled to “magnify”

a speci c portion of the input sensing range, and to fully utilize the dynamic range of the RMS output. Refer to the

section under the “log-slope and intercept” for details.

The INSA & INSB pins are the instantaneous peak-to-average ratio (iPAR) outputs; on each detector. This iPAR

measurement pulls it’s signal from the internals of the RMS detector, just before the RMS calculation is processed.

Each iPAR output (INSA & INSB) produces a voltage signal which provides a direct read of the RF signal AM envelope.

So between the simultaneous measurement of RMS power and iPAR on each power detector, a system can monitor

average power, peak power, peak-to-average power, and the RF waveshape. See the section under “iPAR Envelope

Power Normalized to Average Power” for application details.

VTGT with a nominal value of 2V is typically generated from the VREF reference output of 3V; however the VTGT

voltage can be adjusted to optimize measurement accuracy, especially when measurement at higher crest factors is

important: see “Adjusting VTGT for greater precision” section for technical details.

Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy

absolute accuracy requirements: refer to the “System Calibration” section for more details.

The HMC714LP5E requires a single 5V supply connected to three pins: VCCA, VCCB, and VCCBIAS. Adequate power

supply decoupling is required on these pins. The supply pins should be decoupled to ground using two parallel

capacitors with the values shown in the application schematic. The capacitors should be placed close to the part (with

the smaller value as close as possible to the supply pin) and must provide a low impedance path to RF GND over the

entire input frequency range.

Temperature Sensor Interface

The HMC714LP5E provides a buffered PTAT temperature sensor output that provides a temperature scaling factor

of 2.2 mV/°C with a typical output voltage of 600 mV at 0°C. The output is capable of sourcing 1.5 mA.

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90

TEMP

Ideal

TEMPERATURE (Celcius)

TEMP (V)

TEMP Output

Con guration for the Typical Application

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 157

The INPA and INNA pins are differential inputs on one of two power detectors, which we will refer to as channel A.

INPB and INNB pins are differential inputs on the other power detector, channel B. The inputs for both channels can

be externally con gured with differential or single-ended input. Power match components are placed on these input

terminals, along with DC blocking capacitors. The coupling capacitor values also set the lower spectral boundary of

the input signal bandwidth. The inputs can be reactively matched (refer to input return loss graphs), but a resistor

network should be sufficient for good wideband performance.

Differential Input Interface:

The value of RD (=RDA=RDB) depends on the balun used; if the balun is

50Ω on both sides of the SE-Diff conversion,

then RD where

RM = the desired power match impedance in ohms.

For RM = 50Ω, RD = 67Ω ≈ 68Ω

Single-Ended Input Interface:

Tuned SE-interface: for signal frequencies > 900MHz

Choose L and C elements from the following graph for narrowband tuning of

the SE-interface:

R31/34 = 30Ω, R32/35 = 50Ω, C1/6 =1 nF

R30/33 = 270Ω,

Wideband SE-interface: for signal frequencies < 900 MHz

R31/34 = 0Ω, R32/35 = OPEN, R1/R3 = 68Ω,

R30/33 = Open

C2, C5 is 1 nF decoupling caps.

For wideband (un-tuned) input interfaces, choose the input decoupling capacitor values by  rst determining the

lowest spectral component the power detector is required to sense, ƒL.

Input decoupling capacitor value

farads, where ƒL is in Hertz.

Ex. If the power detector needs to sense down to 10 MHz, the decoupling capacitor value should be

1/(π*10E6*3.2) = 10 nF

A DC bias (Vcc-1.5V) is present on the INP[A,B] and IN[A,B] pins, and should not be overridden.

13.2







RF Input Interface

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 158

RMS Output Interface and Transient Response

Output transient response is determined by the integration capacitances CINTA & CINTB and output load conditions.

Using larger values of CINT will narrow the operating bandwidth of the integrator, resulting in a longer averaging

time-interval and a more  ltered output signal; however it will also slow the power detector’s transient response. A

larger CINT value favors output accuracy over speed. For the fastest possible transient settling times, leave the CINT

pins free of any external capacitance. This con guration will operate the integrator at its widest possible bandwidth,

resulting in short averaging time-interval and an output signal with little  ltering. Most applications will choose to

have some external integration capacitance, maintaining a balance between speed and accuracy. Furthermore, error

performance over crest factor is degraded when CINT is very small (for CINT < 100 pF).

Modulation and deviation results in Electrical Speci cation Table 2 are provided with CINT = 0.1 uF.

Start by selecting CINT using the following expression, and then adjust the value as needed, based on the application’s

preference for faster transient settling or output accuracy.

CINT = 1500 uF/(2*π *ƒlam), in Farads, where ƒlam = lowest amplitude-modulation component frequency in Hertz

Example: when ƒlam = 10 kHz, CINT = 1500 F/(2*π*1000) = 24E-9 Farads ~ 22 nF

Table: Transient response vs. CINT capacitance: with COFS = 0

CINT

RMS Rise - Time

over Dynamic Range

Pin = 0 dBm

RMS Fall - Time

Pin = -30 dBm Pin = -10 dBm Pin = 0 dBm

0 35 nsec 120 nsec 200 nsec 1.18 usec

100 pF 80 nsec 410 nsec 720 nsec 1.26 usec

1 nF 780 nsec 3.3 usec 5.6 usec 7 usec

10 nF 7.8 usec 32.4 usec 54 usec 66.4 usec

Input signal is 1900 MHz CW-tone switched on and off

RMS is loaded with 1kΩ, 4 pF, and VTGT = 2V,

RF Input Interface (Continued)

900 1400 1900 2400 2900 3400 3900

TUNING CAPACITANCE (pF)

TUNING INDUCTANCE (nH)

FREQUENCY (MHz)

Tuning, Single Ended Interface:

fc ± 300 MHz

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

Note: For Single Ended 5800 MHz tune: C = 0.8 pF and L = 1 nH

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 159

Transient response can also be slewed by the RMS output if it is excessively loaded: keep load resistance above

375Ω. An optimal load resistance of approximately 500Ω to 1kΩ will allow the output to move as quickly as it is able.

For increased load drive capability, consider a buffer ampli er on the RMS output.

Using an integrating ampli er on the RMS output allows for an alternative treatment for faster settling times. An external

ampli er optimized for transient settling can also provide additional RMS  ltering, when operating HMC714LP5E with

a lower CINT capacitance value.

LOG-Slope and Intercept

The HMC714LP5E provides for an adjustment of output scale by controlling the fraction of RMSA/RMSB that is

fed-back to the setpoint interface at the VSETA/VSETB pins. Log-slope and intercept can be adjusted to “magnify” a

speci c portion of the input sensing range, and to fully utilize the dynamic range of the RMS output.

A log-slope of 36.5 mV/dBm is set by connecting the RMSA/RMSB outputs directly to VSETA/VSETB pins using

0 resistors RFBKA and RFBKB. The log-slope is adjusted by using the appropriate resistors RFBKA, RFBKB,

RSHUNTA, RSHUNTB on the RMSA/RMSB and VSETA/VSETB pins. Log-intercept is adjusted by applying a DC

voltage to the VSETA/VSETB pins through resistors RSETA and RSETB .

Due to the 15 k input resistance at the VSETA/VSETB pins, moderately low resistance values should be used to

minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of RMSA/RMSB outputs

while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of

the on-chip and external resistor temperature coefficients.

When RFBK = 0 Ohm to set RMS = VSET, then ß = 1

Note: Avoid excessive loading of the RMS output; keep

CLOAD < 35 pF, and RLOAD > 375

Optimized slope = ß * log slope

Optimized intercept = log intercept - (RFBK / RSET) * Vzc

RFBK

ß = RFBK // RSHUNT // RSET

0.5

1.5

2.5

3.5

0 50 100 150 200 250

10 dBm

0 dBm

-10 dBm

-20 dBm

-30 dBm

TIME (usec)

RMSOUT (V)

0.5

1.5

2.5

3.5

0 0.5 1 1.5 2 2.5 3

10 dBm

0 dBm

-10 dBm

-20 dBm

-30 dBm

TIME (usec)

RMSOUT (V)

Rise/Fall Characteristics, CINT = 0 pF Rise/Fall Characteristics, CINT = 10 nF

RMS Output Interface and Transient Response (Continued)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 160

Example: The logarithmic slope can be simply increased by choosing appropriate RFBK and RSHUNT values while

not populating the RSET resistor on the evaluation board to keep the intercept at nominal value. Setting RFBK =

820 and RSHUNT = 2200 results in an optimized slope of:

Example: The logarithmic intercept can also be adjusted by choosing appropriate RFBK, RSHUNT, and RSET values

while keeping the logarithmic slope at about 50mV/dB. Setting RFBK = 820 Ohm and RSHUNT = RSET = 4700

results in an optimized slope of:

Optimized Slope = ß * log_slope = 1.42 * 36.5 mV / dB

Optimized Slope = 52 mV / dB

Optimized Slope = ß * log_slope = 1.4 * 36.5 mV / dB

Optimized Slope = 51 mV / dB

Optimized Intercept = log_intercept -

Optimized Intercept = log_intercept - 0.174 * VZC

RFBK * VZC

RSET

0.5

1.5

2.5

3.5

4.5

-70 -60 -50 -40 -30 -20 -10 0 10

High Slope

Nominal

INPUT POWER (dBm)

RMSOUT (V)

Slope=51mV/dB

Rset=open

Rfbk=820ohm

Rshunt=2200ohm

Slope=36.2mV/dB

Rset=open

Rfbk=0ohm

Rshunt=open

Slope Adjustment

0.5

1.5

2.5

3.5

4.5

-60 -50 -40 -30 -20 -10 0 10

Vzc=0

Vzc=0.8

Vzc=1.6

Vzc=3.2

Vzc=-0.8

Vzc=-1.6

Vzc=-3.2

INPUT POWER (dBm)

RMS (V)

Rset=4700ohm

Rfbk=820ohm

Rshunt=4700ohm

0.5

1.5

2.5

3.5

4.5

-60 -50 -40 -30 -20 -10 0 10

+25C

+85C

-40C

INPUT POWER (dBm)

VOUT (V)

VSET=1.6V

VSET=0V

VSET=-1.6V

Intercept Adjustment Intercept Adjustment (with Temp)

LOG-Slope and Intercept (Continued)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 161

The INSA and INSB are envelope detector outputs for A & B channels that provide a measurement of instantaneous

signal power normalized average power. This feature is called Instantaneous Peak to Average Ratio (iPAR). The iPAR

makes peak-to-average power comparisons immediately obvious. This simultaneous measurement of envelope power

and average power in HMC714LP5E has two fundamental advantages over traditional methods of which employ two

different power detectors working in parallel.

• Both the iPAR and RMS detectors share the same measurement structures, and

• Both the iPAR and RMS detectors share the same temperature compensation mechanisms.

With traditional implementation of peak-to-average power detection, the dominant source of errors is due to the

uncorrelated measurement deviations between the two separate detectors. Both detectors in the HMC714LP5E share

the same circuits (INSA-RMSA pair and INSB-RMSB pair), so any deviations, however small, are fully correlated.

The iPAR feature can be con gured to provide two major functions:

1. A measurement of instantaneous signal power normalized to average power

In this most basic measurement mode, INSA (INSB) output is terminated to ground using an

external resistor which forms an output buffer with the internal transistor Q1 connected in

emitter-follower con guration. With Rext = 3.9 kOhm (R20 and R12 on the evaluation board

for A & B channels), INSA (INSB) output can track the input envelope up to a modulation

bandwidth of 35 MHz at which point the output swing drops by 50%. For an unmodulated input

signal with f>>35 MHz, the INSA (INSB) output will provide a constant value of approximately

1.6V indicating that the instantaneous power is equal to the average power.

The INSA (INSB) output voltages linearly follow the instantaneous power levels at the

detector input with the transfer gain scaled by an external voltage applied to VTGT (pin 28).

For a nominal voltage of 2V on VTGT the scaling factor of the INSA (INSB) output is 200 mV.

INS[A,B] = IREF[A,B] + SF*(EAR[A,B] - 1)

where IREF[A,B] = (VCC[A,B]*REXT) /( 3*(REXT+65 Ohm)) ≈ 1.6 V (for VCC = 5V, REXT = 2 k)

where EAR[A,B] = input signal RF AM envelope-to-average power ratio on channel [A,B]

and SF = the scaling factor set by an external voltage applied to VTGT (200 mV when VTGT = 2.0V)

For example, the INSA (INSB) voltage will drop to 1.4 V (1.6-0.2V) when the input power instantaneously drops to zero,

and will increase to 2.2V (1.6+0.2*3) when the input power instantaneously increases to 4 times the average power.

With lower VTGT values the scaling factor also decreases, allowing INSA (INSB) to linearly track larger swings of input

power.

iPAR – Envelope Power Normalized To Average Power

0.25

0.75

1.25

1.75

2.25

-0.5

0.5

1.5

012345

INS [A,B] (V)

INPUT RF SIGNAL ENVELOPE (V)

Time (usec)

IPAR Output

Input RF Signal Envelope

iPAR Output & Input RF Signal Envelope

vs. Time for an Input Crest Factor of

9.03 dB @ 1900 MHz [1]

1.4

1.6

1.8

2.2

2.4

2.6

2.8

024681012

=Pin/Pav*0.2+(1.6-0.2)

IPWR Output VTGT = 2V

=Pin/Pav*0.1+(1.6-0.1)

IPWR Output VTGT = 1V

IPWR OUTPUT (V)

INSTANTANEOUS INPUT POWER

(NORMALIZED TO AVERAGE POWER)

IPWR(t) = (VTGT/10)x(Pin(t)/Pavg)+(1.6-(Vtgt/10))

INS [A,B] Output vs. Instantaneous

Input Power (Normalized to Average

Power)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

[1] Differential Input Con guration with baluns, RF Input Power @ -20 dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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POWER DETECTORS - SMT

12 - 162

The INSA (INSB) output is highly independent from input signal frequency, input average power, and temperature.

Proprietary design techniques assure very little part-to-part variation and maintain a very high degree of match

between channels.

2. A measurement of peak-power normalized to average power

To measure peak power, a peak-hold mechanism is required at the INSA (INSB) output. The

peak-hold circuit can be as simple as an RC combination on the INSA (INSB) pin. In this

con guration, peak excursions of the input signal is stored as a peak voltage on the external

Cext capacitor. Rext is used to set the quiescent bias point of Q1, and together with Cext

will for a time-constant for the peak-hold function. The larger Cext is the longer the peak-

detector will “remember” the largest signal excursion; conversely a smaller value of Cext will

result in a shorter memory, and less  ltering. The value of Rext for this “peak-power” mode

of the iPAR function should be much larger than the value used for the iPAR mode described

previously (instantaneous power tracking mode) to extend the RextCext time-constant.

INS[A,B] = IREF[A,B] + SF*(PAR[A,B] - 1)

where IREF[A,B] = VCC[A,B] / 3 + 0.15V ≈ 1.82V (for VCC = 5V, REXT = 500 k)

where PAR[A,B] = input signal peak-to-average ratio on channel [A,B]

and SF = the scaling factor set by an external voltage applied to VTGT (150 mV when VTGT = 2.0V)

The graphs below describes the INSA (INSB) peak-hold levels as a function of input peak-to-average ratio (PAR) and

also crest factor. Note how the voltage applied at VTGT affects the INSA (INSB) reading. The voltage applied to the

VTGT pin also has a secondary effect on crest-factor performance. The VTGT signal optimizes internal bias points for

measurement accuracy at higher crest factors: refer to the section under “Adjusting VTGT for greater precision” for a

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

123456789101112

INSA

Linear Fit

PEAK TO AVERAGE POWER RATIO (PAR)

INSA (V)

VTGT=2V

VTGT=1V

Single Tone (CW) Inputs

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

2 3 4 5 6 7 8 9 10 11 12 13 14

VTGT=2V Rext=100kohm

VTGT=2V Rext=500kohm

VTGT=1V Rext=500kohm

INPUT CREST FACTOR (dB)

INSA (V)

256QAM (1Mbps)

Crest Factor~7.8dB

Single Tone

(CW) Inputs

iPAR Feature Peak-to-Average Power

Detection Con guration (REXT = 500Ω,

CEXT = 100 nF)

iPAR Feature Peak-to-Average Power

Detection Con guration vc Crest Factor

(CEXT = 100 nF)

PAR – Envelope Power Normalized To Average Power (Continued)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 163

Standby Mode

The ENX can be used to force the power detector into a low-power standby mode. In this mode, the entire power

detector is powered-down. As ENX is deactivated, power is restored to all of the circuits. There is no memory of

previous conditions. Coming-out of stand-by, CINT and COFS capacitors will require recharging, so if large capacitor

values have been chosen, the wake-up time will be lengthened.

DC Offset Compensation Loop

Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical

function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs

this function, and its response is largely de ned by the capacitance off. Setting DC offset cancellation, loop bandwidth

strives to strike a balance between offset cancellation accuracy, and loop response time. A larger value of COFS results

in a more precise offset cancellation, but at the expense of a slower offset cancellation response. A smaller value of

COFS tilts the performance trade-off towards a faster offset cancellation response. The optimal loop bandwidth setting

will allow internal offsets to be cancelled at a minimally acceptable speed.

full description on crest factor optimization.

iPAR Reference Outputs: IREFA & IREFB

HMC714LP5E also provides two reference voltage outputs, IREFA (pin 26) and IREFB (pin 15) for A & B channels,

which when used with the INSA/INSB outputs allows cancellation of temperature and supply related variations of the

INSA/INSB DC offsets. INS

A/INSB DC offsets are equal to the IREFA/IREFB reference voltages, and these levels

corresponds to the envelope-to-average ratio (EAR) or peak-to-average ratio (PAR) of an unmodulated carrier (CW-

tone crest factor = 3 dB). For the best cancellation of the effects of temperature and supply voltage on INSA/INSB DC

offsets, load both the INSA/INSB and IREFA/IREFB outputs with an equivalent RC network.

Propagation Delay of INSA & INSB

The proper operation of the iPAR feature depends on

the proper settling of the RMS outputs because both

the iPAR feature and the RMS detection feature share

the same internal structures. After internal mechanisms

of the detector have settled, the RMS outputs (RMSA &

RMSB) provide a reading of input average power while

iPAR outputs (INSA & INSB) provides the instantaneous

(or peak) power value of the input signal. There is of

course some  nite propagation delay from the instant of

input power change to the change of INSA (INSB). That

propagation delay is de ned by the external capacitor,

Cext. The  gure illustrates the propagation delay from a

900 MHz, 6-tone (multi-carrier) input signal at -10 dBm

average power to the INSA output of HMC714LP5E. As

illustrated, the propagation delay is 26 nsec with the

detector con gured with the wideband, single-ended

input interface. The use of the differential input interface

with the balun increases the propagation delay to 37

nsec under similar test conditions.

PAR – Envelope Power Normalized To Average Power (Continued)

-0.2

-0.15

-0.1

-0.05

0.05

0.1

0.15

0.2

0.36

0.71

1.07

1.42

1.78

2.14

2.49

2.85

-150 -100 -50 0 50 100 150 200 250

Input Signal Envelope (V)

INSA (V)

Vpd (Vdc)

26nS

Propagation Delay with Wideband

Single Ended Input Interface

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 164

DC Offset Cancellation Loop Bandwith Hz

For example: loop bandwidth for DC cancellation with COFS = 1nF, bandwidth is ~62 kHz

Note: The measurement error produced by internal DC offsets cannot be measured repeatably at any single operating

point, in terms of input signal frequency and level. Measurement error must be calculated to a best  t line, over the

entire range of input signal (again, in terms of signal level and frequency).

Adjusting VTGT for Greater Precision

There are two competing aspects of performance, for which VTGT can be used to set a preference. Depending on

which aspect of precision is more important to the application, the VTGT pin can be used to  nd a compromise between

two sources of RMS output error: internal DC offset cancellation error and deviation at high crest factors (>12dB).

• Increasing VTGT input voltage will reduce the effect of internal DC offsets, but deviation at high crest factors

will increase slightly. A 50% increase in VTGT should produce an 18% improvement in RMS precision due to a

reduction in internal DC offsets effects.

• Decreasing VTGT input voltage will reduce errors at high crest factors, but internal DC offsets will have more

of an effect on measurement accuracy.

If input signal crest factor is not expected to exceed 10dB, you can improve RMS precision by increasing VTGT voltage.

Keep in mind that changing VTGT also adjusts the log-intercept point, which shifts the “input dynamic range”. The best

set-point for VTGT will be the lowest voltage that still maintains the “input dynamic range” over the required range of

input power. This new VTGT set-point should optimize the amount of DC offset related errors.

If error performance at high crest factors requires optimization, set VTGT for the maximum tolerable error at the

highest expected crest factor. Increasing VTGT beyond that point will unnecessarily compromise internal DC offset

cancellation performance. After changing VTGT, re-verify that the “input dynamic range” still covers the required range

of input power.

VTGT should be referenced to VREF for best performance. It is recommended to use a temperature stable DC ampli er

between VTGT and VREF to create VTGT > VREF. The VREF pin is a temperature compensated voltage reference output,

only intended for use with VTGT.

VGTG

Error due to

internal DC offsets

1.0 V nominal + 0.2 dB

1.5 V nominal + 0.1 dB

2.0 V nominal

3.0 V 7.nominal + 0.06 dB

3.5 V nominal + 0.1 dB

VTGT in uence on DC offset compensation

≈ π(500)(COFS + 20 x 1012)

-3

-2.5

-2

-1.5

-1

-0.5

0 2 4 6 8 10 12 14

VTGT=0.5V

VTGT=1V

VTGT=2V

VTGT=3V

CREST FACTOR (dB)

RMSA/RMSB ERROR (dB)

RMS Output Error vs. Crest Factor

DC Offset Compensation Loop (Continued)

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

POWER DETECTORS - SMT

12 - 165

Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy

absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end

and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and

amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile

memory. Calibrate iPAR scaling by measuring the peak-to-average ratio of a known signal.

For example if the following two calibration points were measured at 2.35 GHz:

With Vrms = 2.34V at Pin = -7dBm,

and Vrms=1.84V at Pin = -16dBm

Slope Calibration Constant = SCC

SCC = (-16+7)/(1.84-2.34) = 18 dB/V

Intercept Calibration Constant = ICC

ICC = Pin – SCC*Vrms = -7 – 18.0 * 2.34 = -49.12dBm

Now performing a power measurement:

Vrms measures 2.13V

[Measured Pin] = [Measured Vrms]*SCC + ICC

[Measured Pin] = 2.13*18.0 – 49.12 = -10.78dBm

An error of only 0.22dB

Factory system calibration measurements should be made using an input signal representative of the application. If

the power detector will operate over a wide range of frequencies, choose a central frequency for calibration.

Layout Considerations

• Mount RF input coupling capacitors close to the IN+ and IN- pins.

• Solder the heat slug on the package underside to a grounded island which can draw heat away from the die

with low thermal impedance. The grounded island should be at RF ground potential.

• Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close

to the supply pins.

De nitions:

• Log-slope: slope of PIN –> VRMS transfer characteristic. In units of mV/dB

• Log-intercept: x-axis intercept of PIN –> VRMS transfer characteristic. In units of dBm.

• RMS Output Error: The difference between the measured PIN and actual PIN using a line of best  t.

[measured_PIN] = [measured_VRMS] / [best- t-slope] + [best- t-intercept], dBm

• Input Dynamic Range: the range of average input power for which there is a corresponding RMS output

voltage with “RMS Output Error” falling within a speci c error tolerance.

• Crest Factor: Peak power to average power ratio for time-varying signals.

System Calibration

HMC714LP5 / 714LP5E

v07.1109 DUAL RMS POWER DETECTOR

0.1 - 5.8 GHz