1S$355 Diode, switching, surface mount These diodes are suitable for high density Dimensions (Units : mm) surface mounting on printed circuit boards. They have a high switching CATHODE MARK speed. (The reverse recovery time (t,,) is typically 2 ns.) Features available in UMD2 (USM, SOD-323) package * part marking, letter A 0.3+0.05 [0.1 #0.05 high surge resistance herent Applications 09 Min, 0.7 *3:7 high speed switching 0.8 Min|= = PO = Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Peak reverse voltage Vem 40 DC reverse voltage Ve 40 Peak forward current lem 225 mA Mean rectifying current lo 100 mA Surge current (1 s) lsurge 500 mA Junction temperature Tj 125 C Storage temperature Tstg 55 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol| Min /|Typical| Max Unit Conditions Forward voltage Ve 0.94 1.2 Vo so|le = 100 mA Reverse current In 0.01 0.1 Va =35V Capacitance between _ _ terminals C 0.72 3.0 pF |Vp=0.5 V, f= 1 MHz Reverse recovery time tre 1. 4 ns |VR=6V, lp=10mMA, R_ = 100Q Diodes Rom 671SS355 Switching diodes Electrical characteristic curves = < Ta = 125C < z a & Z W Cc 4 5 3 Q a e it $ qi oO a Ww 1 eu op 04 06 08 10 42 14 0 20 40. 60 80 100 120 140 FORWARD VOLTAGE : Vr (V) REVERSE VOLTAGE Vp (V} Figure 1 Figure 2 3 c a _~ = wo Oo 25 & z 2 Zz 20 y 2 L = z c e Ww > re 215 ui LA Lu 2 4 2 g ly 1.0 4 8 % z ti & 05 ul Oo Ww z c So 0 0 10 20 30 0 10 20 30 REVERSE VOLTAGE : Va {V) FORWARD CURRENT : Ir (mA) Figure 3 Figure 4 Ta = 25C NON: REPETITIVE FORWARD SURGE CURRENT We tay < wo PULSE WIDTH . 0.01 pF Diode under test a \{ | t || > D> oO Ww 9 | Pulse generator 5kQ Sampling a Output: 50 W $50 Q | oscilloscope & 3 c oO Ww Test circuit for measurin PULSE WIDTH ; (m8) Tw reverse recovery time (t,, Figure 5 Figure 6 68 Rom Diodes