IPB017N10N5 MOSFET OptiMOS5Power-Transistor,100V D-PAK7pin Features *Idealforhighfrequencyswitchingandsync.rec. *ExcellentgatechargexRDS(on)product(FOM) *Verylowon-resistanceRDS(on) *N-channel,normallevel *100%avalanchetested *Pb-freeplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplications *Halogen-freeaccordingtoIEC61249-2-21 tab 1 7 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.7 m ID 180 A Qoss 213 nC QG(0V..10V) 168 nC Type/OrderingCode Package IPB017N10N5 PG-TO263-7 1) Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Marking 017N10N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 1Maximumratings atTA=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 180 180 A TC=25C TC=100C - 720 A TC=25C - - 1166 mJ ID=100A,RGS=25 VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25C Operating and storage temperature Tj,Tstg -55 - 175 C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.4 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - Soldering temperature and reflow soldering is allowed - - 260 C reflow MSL1 Tsold 1) see Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=279A - 0.1 10 5 100 A VDS=100V,VGS=0V,Tj=25C VDS=100V,VGS=0V,Tj=125C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.5 1.7 1.7 2.2 m VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance1) RG - 1.3 2.0 - Transconductance gfs 132 264 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 12000 15600 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 1810 2353 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 80 140 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 33 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6 Rise time tr - 23 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6 Turn-off delay time td(off) - 80 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6 Fall time tf - 27 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6 Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 53 - nC VDD=50V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 34 51 nC VDD=50V,ID=100A,VGS=0to10V Switching charge Qsw - 51 - nC VDD=50V,ID=100A,VGS=0to10V Gate charge total Qg - 168 210 nC VDD=50V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=100A,VGS=0to10V Output charge1) Qoss - 213 283 nC VDD=50V,VGS=0V Gate to source charge 1) 1) 1) Defined by design. Not subject to production test. SeeGatechargewaveformsforparameterdefinition. 2) Final Data Sheet 4 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 180 A TC=25C - 720 A TC=25C - 0.9 1.2 V VGS=0V,IF=100A,Tj=25C trr - 88 176 ns VR=50V,IF=100A,diF/dt=100A/s Qrr - 235 470 nC VR=50V,IF=100A,diF/dt=100A/s Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 200 180 160 300 140 ID[A] Ptot[W] 120 200 100 80 60 100 40 20 0 0 50 100 150 0 200 0 50 100 TC[C] 150 200 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 s 10 s 100 s 2 10 0.5 ZthJC[K/W] ID[A] 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 700 4 10 V 6V 600 4.5 V 8V 3 500 5V ID[A] RDS(on)[m] 400 300 5V 200 2 8V 10 V 1 100 0 6V 4.5 V 0 1 2 3 4 0 5 0 100 200 VDS[V] 300 400 500 600 700 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 500 360 450 320 400 280 350 240 gfs[S] ID[A] 300 250 200 160 200 120 150 80 100 175 C 50 0 0 2 25 C 4 40 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25C 7 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4 4.0 3.5 3 3.0 2790 A 2 max VGS(th)[V] RDS(on)[m] 2.5 typ 279 A 2.0 1.5 1 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 C 175 C 25 C max 175 C max Ciss 4 10 102 IF[A] C[pF] Coss 103 101 Crss 102 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8 50 V 102 6 VGS[V] IAS[A] 25 C 100 C 20 V 80 V 4 1 10 150 C 2 100 100 101 102 103 0 0 tAV[s] 50 100 150 200 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 -60 -20 20 60 100 140 180 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 5PackageOutlines Figure1OutlinePG-TO263-7,dimensionsinmm/inches Final Data Sheet 10 Rev.2.3,2016-09-23 OptiMOS5Power-Transistor,100V IPB017N10N5 RevisionHistory IPB017N10N5 Revision:2016-09-23,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version 2.1 2015-02-09 Reduce active area by 0.7% 2.2 2015-10-15 Update package outline 2.3 2016-09-23 Update Avalanche Energy TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.3,2016-09-23