CTT181
Thyristor-Thyristor Modules
Type
CTT181GK08
CTT181GK12
CTT181GK14
CTT181GK16
CTT181GK18
VRRM
VDRM
V
800
1200
1400
1600
1800
VRSM
VDSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
TVJ=TVJM
TC=85oC; 180o sine 300
181 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
6000
6400
5250
5600
A
ITSM, IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
180000
170000
137000
128000
A2s
i2dt
(di/dt)cr
150
500 A/us
(dv/dt)cr TVJ=TVJM; VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise) 1000 V/us
PGM TVJ=TVJM tp=30us
IT=ITAVM tp=500us 120
60 W
PGAV 8 W
ITRMS, IFRMS
ITAVM, IFAVM
oC
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M6)
Terminal connection torque (M6)
_
2.25-2.75/20-25
4.5-5.5/40-48 Nm/lb.in.
Weight 125 g
TVJ=TVJM repetitive, IT=500A
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A non repetitive, IT=500A
diG/dt=0.5A/us
VRGM 10 V
Typical including screws
DEECorp.
CTT181
Thyristor-Thyristor Modules
Symbol Test Conditions Characteristic Values Unit
V
VT, VFIT, IF=300A; TVJ=25oC 1.25
VTO For power-loss calculations only (TVJ=125oC) 0.88 V
rT1.15 m
VD=6V; TVJ=25oC
TVJ=-40oC
VGT 2.5
2.6 V
VD=6V; TVJ=25oC
TVJ=-40oC
IGT 150
200 mA
VGD TVJ=TVJM; VD=2/3VDRM 0.2 V
IGD 10 mA
IHTVJ=25oC; VD=6V; RGK= 200 mA
TVJ=25oC; tp=30us; VD=6V
IG=0.5A; diG/dt=0.5A/us 300 mAIL
per thyristor/diode; DC current
per module
RthJC 0.155
0.0775 K/W
per thyristor/diode; DC current
per module
RthJK 0.225
0.1125 K/W
dSCreeping distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM 10 mA
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tgd 2us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ.
VR=100V; dv/dt=20V/us; VD=2/3VDRM
tq150 us
uC
QSTVJ=TVJM; IT, IF=300A; -di/dt=50A/us 550
IRM 235 A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Keyed gate/cathode twin pins
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
DEECorp.
CTT181
Thyristor-Thyristor Modules
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 Gate trigger characteristics
Fig. 6 Gate trigger delay time
Fig. 2 i2t versus time (1-10 ms)
DEECorp.
3 x CTT181
CTT181
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.155
180oC0.167
120oC0.176
60oC0.197
30oC0.227
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.225
180oC0.237
120oC0.246
60oC0.267
30oC0.297
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0072 0.001
2 0.0188 0.08
3 0.129 0.2
4 0.07 1.0
DEECorp.
3 x CTT181
