VBO 105 IdAVM = 107 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1300 1700 800 1200 1600 Conditions IdAVM TC = 85C, module IFSM TVJ = 45C VR = 0 ~ 107 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1650 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1500 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11250 11300 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9120 9350 A2s A2 s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 15% 15% 15% 15% Nm lb.in. Nm lb.in. 225 g TVJ TVJM Tstg 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) t = 1 min t=1s 5 44 5 44 Terminal connection torque (M5) Weight typ. Symbol Conditions IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM < < 0.3 8.0 mA mA VF IF = 150 A TVJ = 25C < 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 5 V m RthJC per per per per 0.83 0.138 1.13 0.188 K/W K/W K/W K/W RthJK + - Maximum Ratings VISOL - ~ ~ ~ VBO 105-08NO7 VBO 105-12NO7 VBO 105-16NO7 Symbol I2t + Type Features * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values diode; 180 module; 180 diode; 180 module; 180 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 1-2 VBO 105 I F(OV) -----I FSM 200 A TVJ=45C 1.6 160 10 IFSM (A) 2 As TVJ=150C 1500 5 1350 1.4 T=150C 120 1.2 10 4 TVJ=45C 1 80 TVJ=150C 0 VRRM 0.8 1/2 V RRM T=25C 40 0.6 1 VRRM IF 10 0.4 0 VF 1 0 10 1.5 V Fig. 1 Forward current versus voltage drop per diode 300 [W] 10 1 t[ms] 10 2 10 3 3 1 4 t [ms] 0.19 0.11 250 = RTHCA [K/W] 90 0.28 95 DC sin.180 rec.120 rec.60 rec.30 [A] 90 100 200 10 120 85 PSB 105 6 Fig. 3 I2dt versus time (1-10ms) per diode or thyristor Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 2 105 0.44 110 60 115 150 120 0.77 125 100 DC sin.180 rec.120 rec.60 rec.30 50 PVTOT 0 30 130 1.77 135 IdAV 140 0 50 145 C 100 150 200 TC(C) 150 IFAVM 50 0 100 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode/thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 2-2