© 2000 IXYS All rights reserved 1 - 2
123 123 123
VRSM VRRM Type
V V
1200 1200
Symbol Test Conditions Maximum Ratings
IFRMS TC = °CA
IFAVM
ÿÿ
①TC = °C; rectangular, d = 0.5 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TVJ °C
Tstg °C
TSmax °C
Ptot Tc = 25°CW
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL £ 1 mA t = 1 s V~
MdMounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
dSCreeping distance on surface mm
dAStrike distance through air mm
aMaximum allowable acceleration m/s2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°CV
R= VRRM mA
TVJ = 25°CV
R= 0.8 • VRRM mA
TVJ = 125°CV
R= 0.8 • VRRM mA
VFIF = A; TVJ =125°CV
TVJ =25°CV
IF = A; TVJ =125°CV
TVJ =25°CV
VT0 For power-loss calculations only V
rTmW
RthJH DC current K/W
RthJC DC current K/W
trr IF = A TVJ = 100°Cns
IRM VR= V TVJ = 25°CA
-di/dt = A/msT
VJ = 100°CA
Features
●International standard package
with DCB ceramic base plate
●Planar passivated chips
●Short recovery time
●Low switching losses
●Soft recovery behaviour
●Isolation voltage 3600 V~
●UL registered E 72873
Applications
●Antiparallel diode for high frequency
switching devices
●Free wheeling diode in converters
and motor control circuits
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●High reliability circuit operation
●Low voltage peaks for reduced
protection circuits
●Low noise switching
●Low losses
Dimensions in mm (1 mm = 0.0394")
300 450 500
600 55
400 83
1.16
1.46
75 367
75 260
1480
3000
3600
-40...+150
-40...+125
110
28800
29300
23300
23800
2400
2640
2160
2380
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
150 1.38
1.69
260 1.54
1.80
0.228
0.143
12
3
60
Preliminary data
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
MEA 250-12DA MEK 250-12DA MEE 250-012DA
749
875
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
VRRM = 1200 V
IFAVM = 260 A
trr = 450 ns
123
http://store.iiic.cc/
© 2000 IXYS All rights reserved 2 - 2
0.001 0.01 0.1 1 10
0.00
0.05
0.10
0.15
0.20
0.25
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
200 600 10000 400 800
0
200
400
600
800
1000
1200
Kf
TVJ
°C-diF/dt
t
s
K/W
0 400 800 1200
10
30
50
70
90
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
VFR
diF/dt
A
200 600 10000 400 800
20
60
100
140
180
0
40
80
120
160
200
100 1000
0
10
20
30
40
50
60
70
80
0.00.51.01.52.02.5
0
50
100
150
200
250
300
350
400
450
500
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns µs
tfr
ZthJS
A/
m
s
Fig. 7 Transient thermal impedance junction to heatsink
TVJ= 100°C
VR = 600V TVJ= 125°C
IF = 260A
Constants for ZthJS calculation:
iR
thi (K/W) ti (s)
1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus
voltage drop VF per leg
TVJ= 100°C
VR = 600V TVJ= 100°C
VR = 600V
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
tfr
TVJ=125°C
TVJ= 25°C
IF= 300A; max.
IF= 300A; typ.
IF= 250A; typ.
IF= 125A; typ.
IF= 300A; max.
IF= 300A; typ.
IF= 250A; typ.
IF= 125A; typ.
IRM
Qr
IF= 300A; max.
IF= 300A; typ.
IF= 250A; typ.
IF= 125A; typ.
VFR
MEA 250-12 DA MEE 250-12 DA
MEK 250-12 DA
V
ZthJH
http://store.iiic.cc/
