December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
1
MDD1951– Single N-Channel Trench MOSFET 60V
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Characteristics
Symbol
Rating
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 2)
TC=25oC (a)
ID
17.9
TA=25oC (b)
4.4
Pulsed Drain Current
IDM
80
Power Dissipation for Single Operation
TC=25oC
PD
32.8
TA=25oC
2.0
Single Pulse Avalanche Energy (Note 3)
EAS
50
Junction and Storage Temperature Range
TJ, Tstg
-55~+150
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient(Steady-State) (Note 1)
RθJA
60
oC/W
Thermal Resistance, Junction-to-Case
RθJC
3.8
MDD1951
Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ
General Description
The MDD1951 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-
state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
Applications
Inverters
General purpose applications
Features
VDS = 60V
ID = 17.9A @VGS = 10V
RDS(ON)
< 45.0mΩ @ VGS = 10V
< 55.0mΩ @ VGS = 4.5V
December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
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MDD1951– Single N-Channel Trench MOSFET 60V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDD1951RH
-55~150oC
TO-252
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC unless otherwise noted)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
60
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.0
2.0
3.0
Zero Gate Voltage Drain Current
IDSS
VDS = 60V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 17A
-
36
45
mΩ
VGS = 4.5V, ID = 12A
-
44
55
Forward Transconductance
gFS
VDS = 5V, ID = 17A
-
26
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 30V, ID = 17A, VGS = 4.5V
-
4.8
-
nC
Gate-Source Charge
Qgs
-
1.6
-
Gate-Drain Charge
Qgd
-
2.2
-
Input Capacitance
Ciss
VDS = 30V, VGS = 0V, f = 1.0MHz
-
470
-
pF
Reverse Transfer Capacitance
Crss
-
32
-
Output Capacitance
Coss
-
70
-
Turn-On Delay Time
td(on)
VGS = 10V ,VDS = 30V, ID = 17A ,
RGEN = 5Ω
-
7.4
-
ns
Turn-On Rise Time
tr
-
15.2
-
Turn-Off Delay Time
td(off)
-
21.2
-
Turn-Off Fall Time
tf
-
7.6
-
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 5A, VGS = 0V
-
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 17A, di/dt = 100A/μs
-
29
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
32
-
nC
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA, t<10sec
3. Starting TJ=25°C, L=1mH, VGS=10V,ID=7A, VDD=30V, Rated VDS=60V,
December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
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MDD1951– Single N-Channel Trench MOSFET 60V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0 0.5 1.0 1.5 2.0
0
5
10
15
20
VGS=10.0V
VGS=5.0V
VGS=4.5V
ID (A)
VDS (Volts)
510 15 20
30
40
50
60
VGS=10V
VGS=4.5V
RDS(ON) [mΩ ]
ID [A]
-75 -50 -25 0 25 50 75 100 125 150 175
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS=4.5V
ID=3.0A
VGS=10V
ID=4.5A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 4 6 8 10
40
60
80
100
120
140
160
180
200
TA = 125℃
TA = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0 1 2 3 4 5
0
5
10
15
20
VDS=20V
25℃
ID (A)
VGS (Volts)
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
25℃
-IS [A]
-VSD [V]
December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
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MDD1951– Single N-Channel Trench MOSFET 60V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current
Vs. Case Temperature
Fig.11 Transient Thermal Response
Curve
0 5 10
0
2
4
6
8
10
※ Note : ID = 17A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
0 5 10 15 20 25 30
0
200
400
600
800
Crss
Coss
Ciss
Capacitance [pF]
VDS [V]
10-1 100101102
10-1
100
101
102
10s
1s
DC
100ms
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Normalized Thermal Response
t1, Rectangular Pulse Duration [sec]
December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
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MDD1951– Single N-Channel Trench MOSFET 60V
Physical Dimensions
2 Leads, DPAK (TO252)
Dimensions are in millimeters unless otherwise specified
December 2009. Version 1.1 MagnaChip Semiconductor Ltd.
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MDD1951– Single N-Channel Trench MOSFET 60V
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The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
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for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.