MRF9060NR1 MRF9060NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
•Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — -31.5 dBc
•Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Integrated ESD Protection
•200_C Capable Plastic Package
•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
•TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
•TO-272-2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate-Source Voltage VGS - 0.5, + 15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD223
1.79
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.56 °C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Document Number: MRF9060N
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
MRF9060NR1
MRF9060NBR1
945 MHz, 60 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337- 03, STYLE 1
TO-272- 2
PLASTIC
MRF9060NBR1
CASE 1265- 08, STYLE 1
TO-270- 2
PLASTIC
MRF9060NR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Charge Device Model MRF9060NR1
MRF9060NBR1
C6 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J- STD-020
MRF9060NR1
MRF9060NBR1
1
3
260
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th) 2 2.8 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q) 3 3.7 5 Vdc
Drain- Source On-Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on) — 0.21 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
gfs — 5.3 — S
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 101 — pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 53 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.5 — pF
(continued)
MRF9060NR1 MRF9060NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps 17 18 — dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η37 40 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD — -31.5 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL — -14.5 -9 dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Gps — 18 — dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
η— 40 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IMD — -31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
IRL — -12.5 — dB
4
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Z10 0.060″ x 0.520″ Microstrip
Z11 0.360″ x 0.270″ Microstrip
Z12 0.060″ x 0.270″ Microstrip
Z13 0.130″ x 0.060″ Microstrip
Z14 0.300″ x 0.060″ Microstrip
Z15 0.210″ x 0.060″ Microstrip
Z16 0.600″ x 0.060″ Microstrip
Z17 0.290″ x 0.060″ Microstrip
Z18 0.340″ x 0.060″ Microstrip
Z1 0.240″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.100″ x 0.270″ x 0.080″, Taper
Z5 0.330″ x 0.270″ Microstrip
Z6 0.120″ x 0.270″ Microstrip
Z7 0.270″ x 0.520″ x 0.140″, Taper
Z8 0.240″ x 0.520″ Microstrip
Z9 0.340″ x 0.520″ Microstrip
RF
INPUT
RF
OUTPUT
C6
C1
Z16
VDD
Z18
+
VGG
Z1 Z3 Z7
Z15 Z17
C13
B2B1
C17
+
Z4Z2
C7
C2
L1 C14 C16
+
C15
+
Z14Z13Z12
C10 C11 C12
L2
C3
C9C4
C5 C8
Z8 Z9
DUT
Z10Z5 Z6
Z11
Table 6. 930-960 MHz Broadband Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Short Ferrite Bead 95F786 Newark
B2 Long Ferrite Bead 95F787 Newark
C1, C7, C13, C14 47 pF Chip Capacitors 100B470JP 500X ATC
C2, C3, C11 0.8- 8.0 Gigatrim Variable Capacitors 44F3360 Newark
C4, C5 11 pF Chip Capacitors (MRF9060NR1)
10 pF Chip Capacitors (MRF9060NBR1)
100B110JP 500X
100B100JP 500X
ATC
C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitors 93F2975 Newark
C8, C9 10 pF Chip Capacitors 100B100JP 500X Newark
C10 3.9 pF Chip Capacitor 100B3R9CP 500X ATC
C12 1.7 pF Chip Capacitor 100B1R7BP 500X ATC
C17 220 mF Electrolytic Chip Capacitor 14F185 Newark
L1, L2 12.5 nH Inductors A04T- 5 Coilcraft
N1, N2 N- Type Panel Mount, Stripline 3052- 1648- 10 Avnet
WB1, WB2 15 mil Brass Wear Blocks
Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu RF- 35-0300 Taconic
PCB Etched Circuit Board TO-270/TO-272 Surface/Bolt DSelectronics
MRF9060NR1 MRF9060NBR1
5
RF Device Data
Freescale Semiconductor
CUT OUT AREA
WB1
C1 C2 C3
C4
C6
C7
C9
C8
C10
C5 C11 C12 C13
C14 C15 C16
C17
L1 L2
B1
B2
VDD
VGG
MRF9060MB
WB2
INPUT OUTPUT
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout
MRF9060M
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
6
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
TYPICAL CHARACTERISTICS
Gps
960
11
19
−36
50
IRL
η
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
Two−Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
Gps, POWER GAIN (dB)
−10
−18
−14
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
−12
−16
18 45
17 40
16 35
15 −28
14 −30
13 −32
12 −34
955950945940935930
, DRAINη
EFFICIENCY (%)
Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
100
8
20
0.1
0
60
ηVDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
18 50
16 40
14 30
12 20
10 10
110
Gps
100
19
IDQ = 625 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Gps, POWER GAIN (dB)
275 mA
500 mA
18.5
18
17.5
17
16.5
101 100
−55
−15
IDQ = 275 mA
450 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULATION DISTORTION (dBc)IMD,
500 mA
625 mA
−20
−30
−40
−50
110
−45
−35
−25
100
−80
−10
7th Order
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULATION DISTORTION (dBc)IMD,
5th Order
3rd Order
−20
−30
−40
−50
−60
−70
110
IMD
MRF9060NR1 MRF9060NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 8. Power Gain, Efficiency, and IMD versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
100
8
20
−60
60
Pout, OUTPUT POWER (WATTS) PEP
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
18 40
16 20
14 0
12 −20
10 −40
110
η
IMD
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
Gps
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
108
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
Figure 9. MTTF Factor versus Junction Temperature
109
8
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
f
MHz
Zsource
Ω
Zload
Ω
930
945
960
0.63 + j0.57
0.57 + j0.45
0.60 + j0.41
1.8 + j0.84
1.7 + j0.55
1.6 + j0.36
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP
Figure 10. Series Equivalent Source and Load Impedance
f = 960 MHz
Zo = 2 Ω
f = 930 MHz
f = 930 MHz
f = 960 MHz
Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
MRF9060NR1 MRF9060NBR1
9
RF Device Data
Freescale Semiconductor
NOTES
10
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
NOTES
MRF9060NR1 MRF9060NBR1
11
RF Device Data
Freescale Semiconductor
NOTES
12
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
PACKAGE DIMENSIONS
MRF9060NR1 MRF9060NBR1
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
MRF9060NR1 MRF9060NBR1
15
RF Device Data
Freescale Semiconductor
TO-272 -2
PLASTIC
MRF9060NBR1
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
CASE 1337- 03
ISSUE C
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
H
C
A
B
SEATING
PLANE
DATUM
PLANE
2X b1
A
E1
r1
DRAIN
LEAD
D
D1
E
NOTE 8
YY
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1 .039 .043 0.99 1.09
A2 .040 .042 1.02 1.07
D.928 .932 23.57 23.67
D1
E.438 .442 11.12 11.23
E1 .248 .252 6.30 6.40
F
b1 .193
c1 .007 .011 .18
r1 .063 .068 1.60
aaa
1
VIEW Y- Y
.810 BSC
.004
20.57 BSC
.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
.025 BSC
.28
1.73
PIN 3
A1
A2
F
ZONE "J"
7
Baaa MCA
aaa MCA
2X
.199 4.90
0.64 BSC
5.05
c1
2
DRAIN ID
GATE
LEAD
E2
E2
E2 .241 .245 6.12 6.22
16
RF Device Data
Freescale Semiconductor
MRF9060NR1 MRF9060NBR1
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Document Number: MRF9060N
Rev. 10, 5/2006
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