TAS5755MDFD - TEXAS INSTRUMENTS

October, 2018 − Rev. 6

1Publication Order Number:

MOCD217M/D

MOCD207M, MOCD208M,

MOCD211M, MOCD213M,

MOCD217M

8-pin SOIC Dual-Channel

Phototransistor Output

Optocoupler

These devices consist of two gallium arsenide infrared emitting

diodes optically coupled to two monolithic silicon phototransistor

detectors, in a surface mountable, small outline, plastic package. They

are ideally suited for high−density applications, and eliminate the need

for through−the−board mounting.

Features

•Closely Matched Current Transfer Ratios

•Minimum BVCEO of 70 V Guaranteed

– MOCD207M, MOCD208M, MOCD213M

•Minimum BVCEO of 30 V Guaranteed

– MOCD211M, MOCD217M

•Low LED Input Current Required for Easier Logic Interfacing

– MOCD217M

•Convenient Plastic SOIC−8 Surface Mountable Package Style, with

0.050″ Lead Spacing

•Safety and Regulatory Approvals:

– UL1577, 2,500 VACRMS for 1 Minute

– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage

•These are Pb−Free Devices

Applications

•Feedback Control Circuits

•Interfacing and Coupling Systems of Different Potentials and

Impedances

•General Purpose Switching Circuits

•Monitor and Detection Circuits

EMITTER 1

COLLECTOR 1ANODE 1

CATHODE 1

EMITTER 2

COLLECTOR 2

ANODE 2

CATHODE 2

Figure 1. Schematic

SOIC8

M SUFFIX

CASE 751DZ

www.onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

43 5

SYYX

D207

MARKING DIAGRAM

1 − Logo

2 − Device Number

3 − DIN EN/IEC60747−5−5 Option (only appears

on component ordered with this option)

4 − One−Digit Year Code, e.g., “4”

5 − Digit Work Week, Ranging from “01” to “53”

6 − Assembly Package Code

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

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Safety and Insulation Ratings

As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.

Compliance with the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated

Mains Voltage

< 150 VRMS I−IV

< 300 VRMS I−III

Climatic Classification 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,

Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC

904 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,

100% Production Test with tm = 1 s, Partial Discharge < 5 pC

1060 Vpeak

VIORM Maximum Working Insulation Voltage 565 Vpeak

VIOTM Highest Allowable Over−Voltage 4000 Vpeak

External Creepage ≥4 mm

External Clearance ≥4 mm

DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm

TSCase Temperature (Note 1) 150 °C

IS,INPUT Input Current (Note 1) 200 mA

PS,OUTPUT Output Current (Note 1) 300 mW

RIO Insulation Resistance at TS, VIO = 500 V (Note 1) >109W

1. Safety limit values – maximum values allowed in the event of a failure.

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Rating Value Unit

TOTAL DEVICE

TSTG Storage Temperature −40 to +125 °C

TAAmbient Operating Temperature −40 to +100 °C

TJJunction Temperature −40 to +125 °C

TSOL Lead Solder Temperature 260 for 10 seconds °C

PDTotal Device Power Dissipation @ TA = 25°C 240 mW

Derate Above 25°C 2.94 mW/°C

EMITTER

IFContinuous Forward Current 60 mA

IF (pk) Forward Current – Peak (PW = 100 ms, 120 pps) 1.0 A

VRReverse Voltage 6.0 V

PDLED Power Dissipation @ TA = 25°C 90 mW

Derate Above 25°C 0.8 mW/°C

DETECTOR

ICContinuous Collector Current 150 mA

VCEO Collector−Emitter Voltage

− MOCD207M, MOCD208M, MOCD213M

70 V

− MOCD211M, MOCD217M 30 V

VECO Emitter−Collector Voltage 7 V

PDDetector Power Dissipation @ TA = 25°C 150 mW

Derate Above 25°C 1.76 mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter Device Test Conditions Min Typ Max Unit

EMITTER

VFInput Forward Voltage MOCD217M IF = 1 mA −1.05 1.3 V

MOCD213M IF = 10 mA −1.15 1.5 V

MOCD207M,

MOCD208M,

MOCD211M

IF = 30 mA −1.25 1.5 V

IRReverse Leakage Current All VR = 6 V −0.001 100 mA

CIN Input Capacitance All −18 −pF

DETECTOR

ICEO Collector−Emitter Dark Current All VCE = 10 V, TA = 25°C−1.0 50 nA

VCE = 10 V, TA = 100°C−1.0 −mA

BVCEO Collector−Emitter Breakdown

Voltage

MOCD211M,

MOCD217M

IC = 100 mA30 100 −V

MOCD207M,

MOCD208M,

MOCD213M

IC = 100 mA70 100 −V

BVECO Emitter−Collector Breakdown

Voltage

All IE = 100 mA7 10 −V

CCE Collector−Emitter Capacitance All f = 1.0 MHz, VCE = 0 −7−pF

COUPLED

CTR Collector−Output Current MOCD207M IF = 10 mA, VCE = 5 V 100 −200 %

MOCD208M IF = 10 mA, VCE = 5 V 40 −125 %

MOCD211M IF = 10 mA, VCE = 5 V 20 − − %

MOCD213M IF = 10 mA, VCE = 5 V 100 − − %

MOCD217M IF = 1 mA, VCE = 5 V 100 − − %

VCE(SAT) Collector−Emitter Saturation

Voltage

MOCD207M,

MOCD208M,

MOCD211M,

MOCD213M

IC = 2 mA, IF = 10 mA − − 0.4 V

MOCD217M IC = 100 mA, IF = 1 mA − − 0.4 V

ton Turn−On Time All IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 7)

−7.5 −ms

toff Turn−Off Time All IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 7)

−5.7 −ms

trRise Time All IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 7)

−3.2 −ms

tfFall Time All IC = 2 mA, VCC = 10 V,

RL = 100 W (Figure 7)

−4.7 −ms

ISOLATION

VISO Input−Output Isolation Voltage All t = 1 Minute 2500 − − VACRMS

CISO Isolation Capacitance All VI−O = 0 V, f = 1 MHz −0.2 −pF

RISO Isolation Resistance All VI−O = ±500 VDC, TA = 25°C 1011 − − W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 2. LED Forward Voltage vs. Forward

Current

Figure 3. Output Current vs. Input Current

Figure 4. Output Current vs. Ambient

Temperature

Figure 5. Output Current vs. Collector−Emitter

Voltage

Figure 6. Dark Current vs. Ambient

Temperature

IF – LED INPUT CURRENT (mA)

0.1 1 10 100

IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)

0.01

0.1

VCE = 5 V

NORMALIZED TO I F = 10 mA

TA – AMBIENT TEMPERATURE (_C)

−80 −60 −40 −20 0 20 40 60 80 100 120

IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)

0.1

NORMALIZED TO T

A = 25_C

VCE – COLLECTOR−EMITTER VOLTAGE (V)

IC – OUTPUT COLLECTOR CURRENT (NORMALIZED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

IF = 10 mA

NORMALIZED TO VCE = 5 V

TA – AMBIENT TEMPERATURE ( _C)

0 20406080100

ICEO – COLLECTOR −EMITTER DARK CURRENT (nA)

0.1

100

1000

10000

VCE = 10 V

IF – LED FORWARD CURRENT (mA)

VF – FORWARD VOLTAGE (V)

110100

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

TA = –55_C

TA = 25

TA = 100_C

1 234 567 8910

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

SWITCHING TIME TEST CIRCUIT AND WAVEFORMS

Figure 7. Switching Time Test Circuit and Waveforms

OUTPUT PULSE

INPUT PULSE

trtf

INPUT

IFRL

RBE

VCC = 10 V

OUTPUT

ton

10%

90%

toff

Adjust IF to produce IC = 2 mA

REFLOW PROFILE

Figure 8. Reflow Profile

Time (seconds)

Temperature (_C)

Time 25°C to Peak

260

240

220

200

180

160

140

120

100

Tsmax

Tsmin

120

Preheat Area

Max. Ramp−up Rate = 3°C/S

Max. Ramp−down Rate = 6°C/S

240 360

Profile Feature Pb−Free Assembly Profile

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 − 120 seconds

Ramp−up Rate (tL to tP) 3°C/second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 − 150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C30 seconds

Ramp−down Rate (TP to TL) 6°C/second maximum

Time 25°C to Peak Temperature 8 minutes maximum

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

ORDERING INFORMATION

Part Number Package Shipping

MOCD207M Small Outline 8−Pin 100 Units / Tube

MOCD207R2M Small Outline 8−Pin 2500 Units / Tape & Reel

MOCD207VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOCD207R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel

MOCD208M Small Outline 8−Pin 100 Units / Tube

MOCD208R2M Small Outline 8−Pin 2500 Units / Tape & Reel

MOCD208VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOCD208R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel

MOCD211M Small Outline 8−Pin 100 Units / Tube

MOCD211R2M Small Outline 8−Pin 2500 Units / Tape & Reel

MOCD211VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOCD211R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel

MOCD213M Small Outline 8−Pin 100 Units / Tube

MOCD213R2M Small Outline 8−Pin 2500 Units / Tape & Reel

MOCD213VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOCD213R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel

MOCD217M Small Outline 8−Pin 100 Units / Tube

MOCD217R2M Small Outline 8−Pin 2500 Units / Tape & Reel

MOCD217VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube

MOCD217R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

PACKAGE DIMENSIONS

SOIC8

CASE 751DZ

ISSUE O

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M

www.onsemi.com

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MOCD217M/D

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