OPTEK TECHNOLOGY INC ObE D ff b798580 OOOOL4S 1 i Optoelectronics Division TRW Electronic Components Group Product Bulletin 5097 January 1985 T- 4) -e! pee NPN Silicon Phototransistors Types OP501, OP501SLD, OP501SLC, OP501SLB, OP501SLA DIMENSIONS ARE IN INCHES (MILLIMETERS). -200 (5.08) 160 8.57) 185 (4.19) 500 (12.7 146 (3.68) EMITTER q 100 C aa 125 (3.18) A ats (2027 C4 | x COLLECTOR p| |< e .030 (0.78) 025 (0.84 ad ee sa ,050 (1.27) NOM Features ; Absolute Maximum Ratings (Ta = 26C unless otherwise noted! 6,100 (2.64 mm) lead spacing Collactor-Emitter Voltage... .... cee cee cece cece cence enero cs reeeeteeersneseeeeteuuness 30V Wide range of collector currents Emitter-Collector Voltage... 2... 0. cece cece cece cece cece cece eases scesteeecereareners 5.0V Lensed for high sensitivity Storage and Operating Temperature Range ..........ccceeccvevsreevereseeeers -40C to + 100C ; Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with soldering iront!! .......,. 240C Description Power Dissipation oo... . see ccc cc ces ceceevasseueevecuecuveuseveueusuucaarnegevens 100 mw The OP501 and OPSO1SLD through SLA each consist of an NPN silicon phototransistor mounted in a lensed, cleer plastic, end looking package. Tha lensing affect of tha package allows an acceptance half angle of 8 measured fram the Optical axis to the half power point. This saries is identical to the OPS00 except for lead spacing, It ig machanically and spectrally matched to tha OP160SL and OP161SL series of infrared emitting diodes. Notes: (1) BMA flux f recommended. Quration can ba extended to 10 sec, max. when wave soldering. {2] Derate linearly 1.33 mWPC above 25C, {3} Junction temperature maintained at 26C. (4) Light source is an unfiltered tungsten bulb operating at CT = 2870K or equivalent infrared source. (51 To calculate typical collector dark current in A, use the formula Ipgq = 10'0-040 Ta - 34) where Ta is ambient temperature in C. . Typical Parformance Curves Coupling Characteristics of OP161SL and OP501 Photosensor Spactral Response vs. GaAlAs and GaAs oN COTTE Ps oy IM ; AN AAN 00 700 800 900 1000 = #100 0 0.2 04 0.6 0.8 1.0 4 WAVELENGTH Nanometers DISTANCE BETWEEN LENS TIPS laches Test Conditions (LED: Ta Ty= 25C. [p= 100 mA. DC = 0.1%, PW = 100 gs Peck Wavelength - Ap: {A} XSTA 850 + 30 nm, (8) LED GaAlAs 75 + 20 mm, (C) LEO Gads 930 2 15 am 3 3 = RELATIVE QUTPUT CURRENT RELATIVE RESPONSE OR EMISSION % 0 Optoelectronics Division, TAW Electronic Components Group, 1215 W. Crosby Ra., Carrollton, TX 75006 (214) 323-2200, TLX 6/16092 or 215849 52OPTEK TECHNOLOGY INC ObE D [J 798580 oooo14s 3 & Types OP501, OP501SLD, OP5SO1SLC, OP501SLB, OP5SO1SLA Electrical Characteristics (TA = 25C unless otherwise noted} T= 4\-b) > s Symbol Parameter Min. | Typ. | Max.| Units Tast Conditions Iccony =| Gn-State Collector Current OPsoi | 4.0 mA | Vee = 5.0 V, Eg = 20 mWem2t OPBOISED | 10.0 24 1 mA | Vee = 6.0 V, Ey = 20 mWW/omet - OPEOISLC | 17.0 35 | mA | Vee = 8.0 V, Eq = 20 mW/em2t OPSOISLA | 25 50 | mA | Vpe=5.0 V, Ey = 20 mWfemzt OPSOISLA | 40 mA | Vee = 5.0 V, Eq = 20 mWicm2t Alc/AT | Relative I Changes with Temperature 1.00 KIC | Vee = 5.0 V, Ey = 1.00 mWicm2, = 675 nm Ieegt Callector Dark Current 100 nA | Vee = 10.0 V, Ep ~0 Vyarjceo | Collector-Emittar Breakdown Voltage 40 v Ic = 100 pA Viprjeco | Emitter-Collector Breakdown Voltage 5.0 V__ | te~ 100 pA VceiSAT | Collector-Emitter Saturation Voltage 0.40 Ve | te = 800 pA, Eg = 20 mW/cmtt Typical Performance Curves Normalized Collector Current On-State Collector Current Normalized Collector Currant vs. vs. Angular Displacement vs. Irradiance Collector to oe 0 ETM Ty Ty Ty 24 3 [ oPs70 AF = t mWicn? wre d= 076 10 GuAtA 7 . 2 os s F- {0} Tungsten 2870% Yi 7 3 decries #8 s Ss ie y = Ss bal 4 06 gj F IN 7 4 10 qs Soak 4 a Soa g - oN (8) > a = 3 - Y/ 0 4 = s S oot s = 0.2 I = (7 z = - > t a 5 von ML Jul 1 ii 2 40 20 20 10 GC 10 2 20 40 000i 901 =o 1 10 t00 0 0.25 Os @ ANGULAR DISPLACEMENT Deg. & - IRRADIANCE mice? Voce COLLECTOR TO EMITTER Volts Rise and Fall Time Normalized Output Switching Time vs. Load Resistance vs. Fraquancy Test Circuit 240 =5 "a Ty timmy Tm CIRCUIT 1 mur ano [a Wee wert von t PWet ms w LED = OP280 @ d = 875 om - | = 180 IS VOLTAGE ACROSS Ry = , \ cKT 1 = Ry = 1K Z 3 4 3 120 os 2 CKT 1 Ry = 10K 1 0 Z AL 1000S Jiras? $ o 2 4 6 8 Ay LOAD RESISTANCE kt Ww ee Nh 10 100 1,000 10,000 FREQUENCY KHz tot et adsad pulsed LED with ty and ty << 500 ns. Be aed our =1 Yor TAW reserves tha right ta make changes at any time in order to improve design and to supply the bast product possible. Optoslectranics Division, TRW Electronic Components Group, 1215 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716032 or 215849 TRW Ine, 191 85, 1982. TAW is tha name and merk of TRW lac. Printed in U.S.A.