07889 November 28, 2012 Rev: A
EL711DI
Enpirion 2012 all rights reserved, E&OE Enpirion Confidential www.enpirion.com, Page 12
Functional Description
Functional Overview
The EL711DI integrates MOSFET switches, the
PWM controller, gate-drive, controller
compensation, and a magnetics-on-silicon inductor
into a small 3.0mm x 4.5mm x 0.9mm DFN
package. Advanced package design, along with the
high level of integration, provides low output ripple
and noise. The EL711DI uses voltage mode
control for high noise immunity and load matching
to advanced sub-90nm digital-chip loads. An
external resistor divider is used to set the output
voltage over the 0.6V to 5.0V range. The EL711DI
provides exceptional power density for a 1000mA
DC-DC converter solution.
The key enabler of this revolutionary integration is
Enpirion’s proprietary high speed power MOSFET
technology combined with Enpirion’s latest
advanced magnetics-on-silicon inductor
technology. The advanced MOSFET switches are
implemented in deep sub-micron CMOS generating
very low switching loss at ultra-high switching
frequencies while allowing monolithic integration.
The semiconductor process allows seamless
integration of all switching, control, and inductive
energy storage functions.
The proprietary magnetic-on-silicon technology
provides high-density, high-inductance in a very
small footprint on a silicon die. Enpirion magnetics
are carefully matched to the control and
compensation circuits yielding an optimal solution
with assured performance over the entire operating
range.
Protection features include under-voltage lock-out
(UVLO), over-current protection (OCP), short circuit
protection, and thermal overload protection.
Integrated Inductor: Low-Loss, Low
Noise
The EL711DI utilizes a proprietary low loss
integrated inductor technology. The integration of
the inductor greatly simplifies the power supply
design process. Its inductor on silicon is
manufactured with ultra-low loss alloys capable of
operating in the 10-20 MHz regime. Alloy shielding
and compact die construction of the inductor silicon
die reduces the conducted and radiated noise that
can couple into the traces of the printed circuit
board. Further, the package layout is optimized to
reduce the electrical path length for the high di/dt
currents that are a major source of radiated
emissions from DC-DC converters. The unique,
leading-edge integrated inductor technology
provides the optimal solution to complexity, output
ripple, and costs that plague low power DC-DC
converter design with a viable LDO alternative.
Controller Topology
The EL711DI utilizes on-chip Type III Voltage-Mode
control. Voltage-Mode control is properly
impedance matched to digital loads in the sub-
90nm process technologies that are used in today’s
advanced ICs. It also provides a high degree of
noise immunity at light load currents so that low
ripple and high accuracy are maintained over the
entire load range. The very high switching
frequency allows for a very wide control loop
bandwidth and hence excellent transient
performance.
Soft Start
Internal soft start circuits limit in-rush current when
the device starts up from a power down condition or
when the “ENABLE” pin is asserted “high”. Digital
control circuitry limits the V
OUT
ramp rate to levels
that are safe for the Power MOSFETS and the
integrated inductor.
The EL711DI has a pre-set, fixed V
OUT
ramp time.
Therefore, the ramp rate will vary with the output
voltage setting. V
OUT
ramp time is given in the
Electrical Characteristics Table.
Due to this fixed startup ramp time, large and
excessive bulk capacitance on the output of the
device can cause an over-current trip condition at
startup. The maximum total capacitance on the
output, including the output filter capacitor and bulk
and decoupling capacitances, at the load, is given
as:
C
OUT_TOTAL_MAX
(µF) = 718 / V
OUT
(V)
The nominal value for C
OUT
is 10µF. See the
applications section for more details.
Over-Current and Short-Circuit
Protections (OCP and SCP)
The current limit function is achieved by sensing
the current flowing in the high-side switch through a
sense P-MOSFET which is compared to a
reference current. When this level is exceeded the
high-side P-FET is turned off and the low-side N-
FET is turned on, pulling V
OUT
low. This condition is
maintained for approximately 0.2 – 0.5 ms followed
by a normal soft start procedure. If the over-current