NPN Silicon Bipolar Common
Emitter Transistor
Technical Data
Features
• Operates Over a Wide Range
of Voltages and Frequencies
• +25.0 dBm P1dB and 60%
Collector Efficiency @
900 MHz, 4.8 Volts, Typ.
• 15 dB G1dB @ 900 MHz,
4.8 Volts, Typ.
• -35 dBc IMD3 @ Pout of
+14 dBm per tone, 900 MHz,
3 Volts, Typ.
• +21.5 dBm P1dB and 50%
Collector Efficiency @
1900 MHz, 3 Volts, Typ.
Applications
• Driver Amplifier for GSM
and AMPS/ETACS/NMT
Cellular Phones
• 900 and 1800 MHz ISM
• Special Mobile Radio, CATV
• 1900 MHz US PCS
AT-38043
Description
Agilent’s AT-38043 is a low cost,
NPN silicon bipolar junction
transistor housed in a miniature
SC-70 surface mount plastic
package. This device can be used
as a pre-driver, driver, or output
device in many applications for
cellular and other wireless
communications markets. At 4.8
volts, the AT-38043 features +25
dBm output power, while provid-
ing 15 dB of gain and 60% collec-
tor efficiency. Superior efficiency
and gain make the AT-38043 an
excellent choice for battery
powered systems.
The AT-38043 is fabricated with
Agilent’s 10 GHz Ft Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the use
of ion-implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
Surface Mount Package
SOT-343 (SC-70)
Outline 4T
Pin Configuration
4EmitterCollector
3
Emitter
1
Base 2
2
AT-38043 Absolute Maximum Ratings Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.4
VCBO Collector-Base Voltage V 16.0
VCEO Collector-Emitter Voltage V 9.5
ICCollector Current mA 160
PTPower Dissipation[2] mW 500
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[3]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2.
Derate at 7.7 mW/°C for T
C
> 85°C.
T
C
is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
V
CE
= 4.8 V, I
C
= 50 mA, T
J
= 150°C,
1– 2 µm “hot-spot” resolution
.
Electrical Specifications, TC = 25°C
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit A, unless otherwise specified
Symbol Parameters and Test Conditions Units Min. Typ. Max.
P1dB Output Power @ 1 dB Gain Compression[1] dBm +23.5 +25.0
G1dB 1 dB Compression Gain[1] dB 13.5 15.0
ηCCollector Efficiency @ 1 dB Gain Compression[1] %4560
Mismatch Tolerance, No Damage[1] Pout = +25 dBm 7:1
any phase, 2 sec duration
IMD33rd Order Intermodulation Distortion, F1 = 899 MHz dBc –35
2-Tone Test, Pout each tone = +14 dBm[1] F2 = 901 MHz
VCE = 3.0 V
BVEBO Emitter-Base Breakdown Voltage IE = 0.2 mA, open collector V 1.4
BVCBO Collector-Base Breakdown Voltage IC = 1.0 mA, open emitter V 16.0
BVCEO Collector-Emitter Breakdown Voltage IC = 3.0 mA, open base V 9.5
hFE Forward Current Transfer Ratio VCE = 3 V, IC = 160 mA — 50 150 330
ICEO Collector Leakage Current VCEO = 5 V µA15
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
3
AT-38043 Typical Performance, TC = 25°C
4
8
12
20
16
0
20
40
80
60
450 800 900 1800 19001000 2000
OUTPUT POWER
(dBm), GAIN
(dB)
COLLECTOR EFFICIENCY
(%)
5
9
17
13
25
21
0
20
60
40
100
80
450 800 900 1800 19001000 2000
OUTPUT POWER
(dBm), GAIN
(dB)
COLLECTOR EFFICIENCY
(%)
FREQUENCY (MHz)
Figure 1. Output Power, Gain, and
Collector Efficiency vs. Frequency
at V
CE
= 1.2 V, I
CQ
= 15 mA.
FREQUENCY (MHz)
5
10
20
15
30
25
0
20
60
40
100
80
450 800 900 1800 19001000 2000
OUTPUT POWER
(dBm), GAIN
(dB)
COLLECTOR EFFICIENCY
(%)
FREQUENCY (MHz)
Figure 2. Output Power, Gain, and
Collector Efficiency vs. Frequency
at V
CE
= 3.0 V, I
CQ
= 15 mA.
Figure 3. Output Power, Gain, and
Collector Efficiency vs. Frequency
at V
CE
= 4.8 V, I
CQ
= 15 mA.
Figure 5. IMD
3
, IMD
5
vs. Output
Power (per tone) at V
CE
= 3.0 V and
I
CQ
= 15 mA, Frequency = 900 MHz.
Figure 6. IMD
3
, IMD
5
vs. Output
Power (per tone) at V
CE
= 3.0 V and
I
CQ
= 15 mA, Frequency = 1900 MHz.
Figure 4. IMD
3
, IMD
5
vs. Output
Power (per tone) at V
CE
= 3.0 V and
I
CQ
= 15 mA, Frequency = 450 MHz.
P
1dB
η
c
G
1dB
IMD
5
P
1dB
η
c
G
1dB
P
1dB
η
c
G
1dB
-60
-50
-40
0
-10
-30
-20
8 9 10 11 12 14 15 1613 17
IMD
(dBc)
OUTPUT POWER/TONE (dBm)
Γsource = 0.855 170
Γload = 0.576 149
IMD
3
IMD
5
-60
-50
-40
0
-10
-30
-20
2 4 6 8 10 14 16 1812 20
IMD
(dBc)
OUTPUT POWER/TONE (dBm)
Γsource = 0.865 -164
Γload = 0.500 153
IMD
3
IMD
5
-60
-50
-40
0
-10
-30
-20
13579 1315 191711 21
IMD
(dBc)
OUTPUT POWER/TONE (dBm)
Γsource = 0.854 -142
Γload = 0.650 173
IMD
3
4
Frequency = 900 MHz
Duty Cycle
Parameters 12.5% 33% 50% 100% = CW
P1dB 22.8 22.7 22.6 22.5
G1dB 13.7 13.6 13.5 13.4
ηc 57.6 58.0 57.3 56.1
P3dB 23.5 23.5 23.5 23.6
G3dB 11.7 11.6 11.5 11.4
ηc 64.5 65.7 66.0 66.0
AT-38043 Typical Performance Under Pulsed Operation,
T
C
= 25°C
V
CE
= 3.0 V, I
CQ
= 15 mA, pulse width = 577 µs, unless otherwise specified
Frequency = 1900 MHz
Duty Cycle
Parameters 12.5% 33% 50% 100% = CW
P1dB 21.7 21.6 21.6 21.6
G1dB 7.4 7.4 7.3 7.3
ηc 51.7 52.0 52.2 50.4
P3dB 24.1 23.9 23.8 23.8
G3dB 5.4 5.5 5.3 5.3
ηc 64.6 64.3 64.5 63.1
5
AT-38043 Typical Large Signal Impedances
Freq. Bias Γsource Γload
( MHz ) VCE (V) ICQ (mA) Mag. Ang. Mag. Ang.
450 1.2 15.0 0.873 169.4 0.602 163.5
450 3.0 15.0 0.855 170.3 0.576 148.7
450 4.8 15.0 0.873 176.3 0.593 133.2
800 1.2 15.0 0.886 -166.6 0.607 173.4
800 3.0 15.0 0.896 -170.9 0.505 151.1
800 4.8 15.0 0.899 -167.8 0.530 131.0
900 1.2 15.0 0.861 -160.1 0.576 175.4
900 3.0 15.0 0.865 -164.1 0.500 153.3
900 3.6 15.0 0.897 -165.9 0.528 147.6
900 4.8 15.0 0.877 -165.7 0.479 137.9
900 6.0 15.0 0.872 -166.4 0.494 128.2
1000 1.2 15.0 0.867 -162.9 0.656 171.0
1000 3.0 15.0 0.877 -163.7 0.590 150.5
1000 4.8 15.0 0.881 -162.7 0.575 139.8
1800 1.2 15.0 0.830 -138.2 0.598 -176.1
1800 3.0 15.0 0.863 -145.3 0.633 175.8
1800 4.8 15.0 0.870 -146.2 0.603 164.3
1900 1.2 15.0 0.839 -138.4 0.642 -178.5
1900 3.0 15.0 0.854 -142.0 0.650 172.6
1900 3.6 15.0 0.895 -149.4 0.666 171.1
1900 4.8 15.0 0.842 -138.2 0.610 166.4
1900 6.0 15.0 0.907 -149.3 0.636 156.4
2000 1.2 15.0 0.855 -143.5 0.705 177.5
2000 3.0 15.0 0.866 -140.1 0.673 173.0
2000 4.8 15.0 0.864 -140.0 0.682 163.0
6
Figure 7. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
1.8
2.2
2.0
2.4
3.2
3.0
2.6
2.8
01234 67 98510
Ccb
(pF)
Vcb (V)
Packaged Model
C
CPad
CPad
Die Area = 0.67
CPad = 0.36 pF E1
B
E2
CPad
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
Label
NR
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
RE
RC
Value
0.9886
1E-9
1.11
3.598E-15
3
1.02 pF
0.4276
0.2508
0.001
0.999
0.98 pF
0.811
0.596
5.435
1.30
0.01
AT-38043 Spice Model Parameters
Die Model
BL = La L = Lb
R = Rb
R = Ra
C = Ca C = Cb
B
E1 E2
C
E
Label
Ra
Rb
La
Lb
Ca
Cb
Value
0.1 Ω
0.2 Ω
0.85 nH
0.25 nH
0.01 pF
0.01 pF
C
L = La L = Lb
R = Rb
R = Ra
C = Ca C = Cb
L = La R = RaL = Lb
R = Rb C = Cb C = Ca
L = La R = Ra
C = Cb C = Ca
7
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 1.2 V, IC = 50 mA, TC = +25°C
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.05 0.74 -84 29.4 29.45 147 -28.9 0.036 58 0.79 -48
0.10 0.79 -122 26.2 20.32 132 -26.2 0.049 47 0.64 -73
0.25 0.83 -157 19.5 9.41 129 -24.9 0.057 50 0.52 -80
0.50 0.84 -174 13.7 4.82 146 -24.5 0.060 78 0.51 -42
0.75 0.84 178 10.1 3.21 168 -24.2 0.061 110 0.52 12
0.90 0.84 175 8.6 2.70 -178 -23.9 0.064 130 0.50 45
1.00 0.83 173 7.7 2.43 -169 -23.8 0.065 144 0.51 70
1.25 0.84 169 5.9 1.97 -145 -23.2 0.069 176 0.49 125
1.50 0.84 165 4.2 1.63 -122 -22.8 0.072 -152 0.51 -180
1.75 0.84 161 2.9 1.40 -97 -22.4 0.076 -120 0.52 -120
2.00 0.84 157 1.9 1.24 -73 -21.8 0.081 -89 0.51 -63
2.25 0.85 152 0.7 1.09 -49 -21.5 0.084 -58 0.54 -7
2.50 0.85 148 -0.3 0.97 -24 -21.1 0.088 -27 0.56 55
2.75 0.85 144 -1.1 0.88 1 -20.6 0.093 4 0.55 113
3.00 0.86 141 -2.0 0.80 26 -20.3 0.097 34 0.55 168
3.25 0.86 138 -2.9 0.72 52 -20.0 0.100 64 0.57 -135
3.50 0.87 136 -3.6 0.66 78 -19.6 0.105 94 0.57 -76
3.75 0.87 134 -4.3 0.61 105 -19.2 0.109 124 0.57 -19
4.00 0.88 133 -5.0 0.56 131 -19.0 0.112 153 0.59 37
4.25 0.89 131 -5.8 0.51 158 -18.9 0.114 -178 0.62 95
4.50 0.89 129 -6.5 0.48 -175 -18.7 0.116 -147 0.64 155
4.75 0.90 128 -7.0 0.45 -147 -18.4 0.121 -118 0.65 -147
5.00 0.90 127 -7.6 0.42 -121 -18.2 0.124 -89 0.67 -92
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 3.0 V, IC = 50 mA, TC = +25°C
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.05 0.75 -66 30.5 33.53 154 -31.2 0.028 65 0.84 -33
0.10 0.78 -106 28.0 25.02 140 -27.7 0.041 53 0.67 -52
0.25 0.81 -149 21.8 12.34 133 -25.8 0.051 54 0.47 -62
0.50 0.82 -169 16.1 6.40 148 -25.3 0.054 80 0.42 -29
0.75 0.82 -179 12.6 4.27 170 -25.0 0.056 112 0.42 22
0.90 0.82 178 11.1 3.59 -177 -24.8 0.058 132 0.41 55
1.00 0.82 176 10.2 3.22 -167 -24.6 0.059 145 0.41 80
1.25 0.82 171 8.3 2.61 -144 -24.1 0.062 178 0.40 135
1.50 0.83 167 6.7 2.16 -120 -23.7 0.065 -150 0.41 -171
1.75 0.83 163 5.3 1.85 -96 -23.2 0.069 -117 0.43 -111
2.00 0.83 159 4.2 1.63 -72 -22.6 0.074 -85 0.43 -53
2.25 0.84 154 3.1 1.43 -48 -22.2 0.077 -55 0.46 2
2.50 0.84 150 2.1 1.27 -23 -21.8 0.081 -23 0.48 64
2.75 0.84 146 1.2 1.15 2 -21.3 0.086 8 0.47 123
3.00 0.85 142 0.3 1.03 27 -20.9 0.090 38 0.48 177
3.25 0.85 139 -0.6 0.93 52 -20.6 0.094 69 0.50 -126
3.50 0.86 137 -1.4 0.85 78 -20.2 0.098 99 0.51 -67
3.75 0.86 135 -2.2 0.78 105 -19.7 0.103 129 0.51 -9
4.00 0.87 134 -2.9 0.71 131 -19.4 0.107 158 0.53 46
4.25 0.88 132 -3.7 0.65 157 -19.2 0.109 -173 0.57 103
4.50 0.89 130 -4.5 0.60 -176 -19.0 0.112 -143 0.60 163
4.75 0.90 129 -5.0 0.56 -149 -18.7 0.117 -113 0.61 -140
5.00 0.90 128 -5.7 0.52 -122 -18.4 0.120 -84 0.62 -85
8
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 3.6 V, IC = 50 mA, TC = +25°C
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.05 0.75 -65 30.6 33.94 154 -31.3 0.027 65 0.84 -32
0.10 0.78 -104 28.1 25.49 140 -27.8 0.041 54 0.67 -50
0.25 0.81 -148 22.0 12.64 133 -25.9 0.050 54 0.46 -60
0.50 0.82 -169 16.4 6.57 148 -25.4 0.054 80 0.41 -28
0.75 0.82 -178 12.8 4.38 170 -25.1 0.055 112 0.41 23
0.90 0.82 178 11.3 3.68 -177 -24.8 0.057 132 0.40 56
1.00 0.82 176 10.4 3.30 -167 -24.7 0.058 145 0.41 81
1.25 0.82 171 8.5 2.67 -144 -24.2 0.062 178 0.39 136
1.50 0.83 167 6.9 2.21 -120 -23.8 0.065 -150 0.40 -170
1.75 0.83 163 5.5 1.89 -95 -23.3 0.068 -117 0.42 -110
2.00 0.83 159 4.4 1.67 -71 -22.7 0.073 -85 0.42 -52
2.25 0.83 154 3.3 1.46 -48 -22.3 0.077 -54 0.45 2
2.50 0.84 150 2.3 1.30 -23 -21.9 0.081 -23 0.47 65
2.75 0.84 146 1.4 1.18 2 -21.4 0.085 8 0.47 124
3.00 0.84 142 0.5 1.06 27 -21.0 0.090 39 0.47 178
3.25 0.85 140 -0.4 0.95 52 -20.6 0.093 69 0.49 -125
3.50 0.85 137 -1.2 0.87 78 -20.2 0.098 99 0.50 -66
3.75 0.86 135 -2.0 0.80 105 -19.8 0.102 129 0.50 -8
4.00 0.87 134 -2.7 0.73 131 -19.5 0.106 158 0.53 47
4.25 0.88 132 -3.5 0.67 157 -19.3 0.109 -172 0.57 104
4.50 0.89 130 -4.3 0.61 -176 -19.0 0.112 -142 0.59 164
4.75 0.90 129 -4.8 0.57 -149 -18.7 0.116 -113 0.60 -139
5.00 0.90 128 -5.5 0.53 -122 -18.4 0.120 -84 0.62 -84
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 4.8 V, IC = 50 mA, TC = +25°C
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.05 0.77 -63 30.8 34.50 155 -31.6 0.026 66 0.84 -31
0.10 0.79 -102 28.3 26.10 141 -28.0 0.040 55 0.68 -49
0.25 0.81 -147 22.3 13.02 133 -26.0 0.050 54 0.46 -58
0.50 0.81 -168 16.6 6.78 148 -25.5 0.053 80 0.40 -27
0.75 0.81 -178 13.1 4.52 170 -25.2 0.055 112 0.40 24
0.90 0.81 179 11.6 3.79 -176 -24.9 0.057 132 0.39 57
1.00 0.81 176 10.6 3.41 -167 -24.8 0.058 146 0.40 82
1.25 0.82 172 8.8 2.75 -143 -24.3 0.061 178 0.38 137
1.50 0.82 167 7.2 2.28 -120 -23.8 0.064 -149 0.39 -169
1.75 0.82 163 5.8 1.95 -95 -23.4 0.068 -117 0.41 -109
2.00 0.83 159 4.7 1.72 -71 -22.8 0.073 -85 0.41 -51
2.25 0.83 155 3.6 1.51 -47 -22.4 0.076 -54 0.44 3
2.50 0.83 150 2.5 1.34 -22 -21.9 0.080 -22 0.47 66
2.75 0.84 146 1.7 1.21 3 -21.4 0.085 9 0.46 125
3.00 0.84 143 0.7 1.09 27 -21.0 0.089 39 0.46 179
3.25 0.85 140 -0.2 0.98 53 -20.7 0.093 69 0.48 -124
3.50 0.85 138 -1.0 0.89 79 -20.3 0.097 100 0.49 -65
3.75 0.86 136 -1.7 0.82 105 -19.8 0.102 130 0.50 -7
4.00 0.87 134 -2.5 0.75 131 -19.5 0.106 159 0.52 48
4.25 0.88 132 -3.3 0.68 157 -19.3 0.108 -172 0.56 105
4.50 0.89 130 -4.0 0.63 -176 -19.1 0.111 -142 0.58 165
4.75 0.89 129 -4.6 0.59 -149 -18.7 0.116 -112 0.60 -138
5.00 0.90 128 -5.3 0.54 -122 -18.5 0.119 -83 0.61 -83
9
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 6.0 V, IC = 50 mA, TC = +25°C
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.05 0.78 -62 30.8 34.85 155 -31.7 0.026 66 0.84 -30
0.10 0.80 -101 28.5 26.47 141 -28.1 0.039 55 0.68 -48
0.25 0.81 -146 22.4 13.26 134 -26.1 0.05 55 0.45 -57
0.50 0.81 -168 16.8 6.90 149 -25.6 0.053 81 0.39 -26
0.75 0.81 177 13.3 4.60 170 -25.3 0.055 112 0.40 25
0.90 0.81 179 11.7 3.86 -176 -25.0 0.056 132 0.38 57
1.00 0.81 177 10.8 3.47 -167 -24.8 0.057 146 0.39 83
1.25 0.82 172 8.9 2.80 -143 -24.3 0.061 178 0.37 138
1.50 0.82 167 7.3 2.32 -120 -23.9 0.064 -149 0.39 -168
1.75 0.82 163 6.0 1.99 -95 -23.4 0.067 -116 0.40 -108
2.00 0.83 159 4.8 1.75 -71 -22.8 0.072 -85 0.40 -50
2.25 0.83 155 3.7 1.53 -47 -22.4 0.076 -54 0.43 4
2.50 0.83 150 2.7 1.36 -22 -22.0 0.08 -22 0.46 66
2.75 0.84 146 1.8 1.23 3 -21.5 0.084 9 0.45 125
3.00 0.84 143 0.9 1.11 27 -21.1 0.088 39 0.45 180
3.25 0.85 140 0 1.00 53 -20.7 0.092 70 0.48 -123
3.50 0.85 138 -0.8 0.91 79 -20.3 0.097 100 0.49 -64
3.75 0.86 136 -1.6 0.83 105 -19.9 0.101 130 0.49 -6
4.00 0.87 134 -2.3 0.76 131 -19.6 0.105 159 0.52 48
4.25 0.88 132 -3.2 0.70 157 -19.4 0.108 -172 0.55 106
4.50 0.89 130 -3.9 0.64 -176 -19.1 0.111 -141 0.58 165
4.75 0.89 129 -4.5 0.60 -149 -18.8 0.115 -112 0.59 -137
5.00 0.90 128 -5.2 0.55 -123 -18.5 0.119 -83 0.61 -83
10
Figure 8. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
V
CE
= 1.2 V, I
C
= 50 mA.
-10
0
-5
5
30
25
20
10
15
0.05 0.25 0.75 1.00
2.00 3.00 4.00 5.00
Gain
(dB)
FREQUENCY (GHz)
MSG
MAG
|S
21
|
2
Figure 9. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
V
CE
= 3.0 V, I
C
= 50 mA.
-10
0
-5
5
35
30
25
20
10
15
0.05 0.25 0.75 1.00
2.00 3.00 4.00 5.00
Gain
(dB)
FREQUENCY (GHz)
MSG
MAG
|S
21
|
2
Figure 10. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
V
CE
= 3.6 V, I
C
= 50 mA.
-10
0
-5
5
35
30
25
20
10
15
0.05 0.25 0.75 1.00
2.00 3.00 4.00 5.00
Gain
(dB)
FREQUENCY (GHz)
MSG
MAG
|S
21
|
2
Figure 11. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
V
CE
= 4.8 V, I
C
= 50 mA.
-10
0
-5
5
35
30
25
20
10
15
0.05 0.25 0.75 1.00
2.00 3.00 4.00 5.00
Gain
(dB)
FREQUENCY (GHz)
MSG
MAG
|S
21
|
2
Figure 12. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
V
CE
= 6.0 V, I
C
= 50 mA.
-10
0
-5
5
35
30
25
20
10
15
0.05 0.25 0.75 1.00
2.00 3.00 4.00 5.00
Gain
(dB)
FREQUENCY (GHz)
MSG
MAG
|S
21
|
2
AT-38043 Typical Performance, TC = 25°C
11
Test Circuit A: Test Circuit Board Layout @ 900 MHz
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz
V
BB
T1
R2
C3
R1
C5
C10
C9
V
CC
V
CC
C6 C7
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
T1
100.0 pF
100.0 pF
100.0 nF
10.0 pF
100.0 nF
1.5 µF
10.0 µF
100.0 pF
3.6 pF
100.0 pF
10.0 Ω
620.0 Ω
MBT 2222A
4/97
OUTPUTINPUT B–MFG0142
REV A
C4
C1
C2 C8
PA4 DEMO
76.2 (3.0)
38.1 (1.5)
V
BB
CW Test
V
CE
= 4.8 V
I
CQ
= 15 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
620 Ω
V
BB
V
CC
10 Ω
RF IN
100 pF
100 nF
80 Ω80 Ω
50 Ω
50 Ω
λ/4 @ 900 MHz λ/4 @ 900 MHz
B
CE
DC
Transistor
100 pF 100 pF
10 pF = 5.89 (.232)
100 pF
RF OUT
3.6 pF
= 27.74 (1.092)
100 nF 1.5 µF 10 µF
CW Test
V
CE
= 4.8 V
I
CQ
= 15 mA
Freq. = 900 MHz
12
Test Circuit B: Test Circuit Board Layout @ 1900 MHz
Test Circuit B: Test Circuit Schematic Diagram @ 1900 MHz
620 Ω
V
BB
V
CC
10 Ω
RF IN
100 pF
100 nF
80 Ω80 Ω
50 Ω
50 Ω
λ/4 @ 1900 MHz λ/4 @ 1900 MHz
B
CE
DC
Transistor
100 pF 100 pF
3.6 pF = 0.020 (0.510)
100 pF
RF OUT
1.8 pF
= 0.299 (7.590)
100 nF 1.5 µF 10 µF
CW Test
V
CE
= 3.0 V
I
CQ
= 15 mA
Freq. = 1900 MHz
V
BB
T1
R2
C2
R1
C7
C10
C5
V
CC
V
CC
C8 C9
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
T1
100.0 pF
100.0 nF
100.0 pF
3.6 pF
1.8 pF
100 pF
100 nF
1.5 µF
10 µF
100.0 pF
10.0 Ω
620.0 Ω
MBT 2222A
4/97
OUTPUTINPUT B–MFG0142
REV A
C4
C1
C3 C6
PA4 DEMO
76.2 (3.0)
38.1 (1.5)
V
BB
CW Test
V
CE
= 3.0 V
I
CQ
= 15 mA
Freq. = 1900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
13
Package Dimensions
SOT-343 (SC-70) Plastic Package
Part Number Ordering Information
Part Number Devices per Reel Container
AT-38043-TR1 3000 7" Reel
AT-38043-TR2 10,000 13" Reel
AT-38043-BLK 100 Tape
E
D
A
A1
b TYP
e
E1
1.30 (0.051)
BSC
1.15 (.045) BSC
θ
h
C TYP
L
DIMENSIONS ARE IN MILLIMETERS (INCHES)
DIMENSIONS
MIN.
0.80 (0.031)
0 (0)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
0.450 TYP (0.018)
1.15 (0.045)
0.10 (0.004)
0
MAX.
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
1.35 (0.053)
0.35 (0.014)
10
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
1.15 (.045) REF
1.30 (.051) REF
1.30 (.051)2.60 (.102)
0.55 (.021) TYP 0.85 (.033)
14
Device Orientation
Tape Dimensions
For Outline 4T
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL END VIEW
8 mm
4 mm
TOP VIEW
38 38 38 38
P
P
0
P
2
FW
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5966-1275E (11/99)
