RED MICRO: DEVICES | RF3817 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical Applications * Cellular Basestation Amplifiers and Transceivers * Gain Stage or Driver Amplifiers for Linear and Saturated Amplifiers Product Description The RF3817 is a high-performance inGaP/GaAs general purpose AF and microwave gain block amplifier. This 50Q amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-sig- nal applications. Designed with an external bias resistor, the RF3817 provides high output power and high gain over broad frequency range. This low-cost amplifier is packaged in a thermally efficient, industry standard, SOT89 package. Optimum Technology Matching Applied C siBut [] GaAsHBT [[] GaAs MESFET C] sipicmos [] SiGeHBT [] sicmos [Mf iInGae/HBT [] GaNHEMT [] SiGe BiCMOS , GND L2] a 2 o RF IN[ =] RF OUT [| Functional Block Diagram Rev A1 031110 Narrow and Broadband Commercial and Military Radio Designs AMPLIFIERS 1.04 a 0.50 _,! 1.60 oe] r | 0.30 : rs 40 3.10 4.60 2.90 4.40 = L 0.48 | 0 36- 260, 2PL 2.40 Shaded lead is pin 1. of bb Toes 0.38 GENERAL PURPOSE Dimensions in mm. Package Style: SOT89 Features Reliable, Low-Cost HBT Design 19.1dB Gain, +19.0dBm P1dB @ 1.0GHz * High P1dB of +18.8dBm @ 3.0GHz Single 6V Power Supply Operation 500 I/O Matched * Thermally-Efficient Package Ordering Information RF3817 Cascadable Broadband GaAs MMIC Amplifier DC to 3GHz RF3817SB 5-piece Sample Bag RF3817SA 100-piece Reel RF3817TR7 7 Reel (750 pieces) AF3817TR13 13 Reel (2,500 pieces) RAF3817PCBA-410 Evaluation Board FF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 hitp:/Awww.rimd.com 4-109@ a c > a = < c w = Ww oS a fo w 2 a a = < |_RF3817_ |} 4-110 Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. Rev A1 031110