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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD1N60C / FQU1N60C N-Channel QFET(R) MOSFET 600 V, 1.0 A, 11.5 Features Description * 1 A, 600 V, RDS(on) = 11.5 (Max.) @ VGS = 10 V, ID = 0.5 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. 4.8 nC) * Low Crss (Typ. 3.5 pF) * 100% Avalanche Tested * RoHS Compliant D D G S I-PAK D-PAK G D G S S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQD1N60CTM / FQU1N60CTU 600 Unit V 1 A 0.6 A - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage - Pulsed (Note 1) 4 A 30 V mJ EAS Single Pulsed Avalanche Energy (Note 2) 33 IAR Avalanche Current (Note 1) 1 A EAR (Note 1) dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C)* 2.8 4.5 2.5 mJ V/ns W PD Power Dissipation (TC = 25C) 28 0.22 -55 to +150 W W/C C 300 C TJ, TSTG TL (Note 3) - Derate Above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8'' from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction-to-Ambient (*1 in2 Pad of 2-oz Copper), Max. Semiconductor Components Industries, LLC, 2017 May, 2017, Rev.1.5 FQD1N60CTM / FQU1N60CTU 4.53 110 Unit C/W 50 Publication Order Number: FQD1N60C / FQU1N60C 1 FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET www.onsemi.com Part Number FQD1N60CTM Top Mark FQD1N60C Package D-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16mm Quantity 2500 units FQU1N60CTU FQU1N60C I-PAK Tube N/A N/A 70 units Electrical Characteristics Symbol TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 -- -- V -- 0.6 -- V/C VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 A 2.0 -- 4.0 V VGS = 10 V, ID = 0.5 A -- 9.3 11.5 VDS = 40 V, ID = 0.5 A -- 0.75 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 130 170 pF On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 19 25 pF -- 3.5 4.5 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 1.1 A, RG = 25 (Note 4) VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4) -- 7 24 ns -- 21 52 ns -- 13 36 ns -- 27 64 ns -- 4.8 6.2 nC -- 0.7 -- nC -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A ISM -- -- 4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 190 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/s -- 0.53 -- C Notes: 1. Repetitive Rating : pulse-width limited by maximum junction temperature. 2. L = 59 mH, IAS = 1.1 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 1.1 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. www.onsemi.com 2 FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 ID, Drain Current [A] 10 ID, Drain Current [A] Top : -1 10 0 10 o 150 C o -55 C o 25 C Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 -2 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics I DR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 30 25 VGS = 10V 20 15 VGS = 20V 10 5 Note : TJ = 25 0 0.0 0.5 1.0 1.5 2.0 2.5 150 Notes : 25 1. VGS = 0V 2. 250s Pulse Test -1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 250 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 120V 10 VGS, Gate-Source Voltage [V] 200 Capacitance [pF] 0 10 Ciss 150 Coss 100 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 1A 0 -1 10 0 0 10 1 10 0 1 2 3 4 5 6 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 1.2 Operation in This Area is Limited by R DS(on) 1 10 1.0 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 0 10 10 ms 100 ms DC -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 1 10 2 10 0.6 0.4 0.2 -2 10 0.8 0.0 25 3 10 10 50 75 100 125 TC, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature ZJC(t), Thermal Response [oC/W] ZJC(t), Thermal Response VDS, Drain-Source Voltage [V] D = 0 .5 10 0 N o te s : 1 . Z J C (t) = 4 .5 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 t2 0 .0 1 -1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET Typical Characteristics FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQD1N60C / FQU1N60C -- N-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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