T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 1 of 5
2N5114 thru 2N5116
Availa ble on
commercial
versions
P-CHANNEL J-FET
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
This leaded device is availa ble in high-reliability equivalents for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applicatio ns .
TO-18 (TO-206AA)
Package
Also available in:
UB package
(surface mount)
2N5114UB – 2N5116UB
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5114 thru 2N5116 series.
• Up-screening in reference to MIL-PRF-19500 is available. (See part nomenclature.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Leaded TO-18 package.
• Lightweight.
MAXIMUM RATINGS @ TC = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Gate-Source Voltage (1)
VGS
30
V
Drain-Source Voltage
VDS
30
V
Drain-Gate Voltage (1)
VDG
30
V
Gate Current
IG
50
mA
Steady-State Power Dissipation @ TA = +25 oC (2)
PD
0.500
W
Notes: 1. Symmetrical geom etry all ows operation of thos e units with source / drain leads interchanged.
2. Derate linearly 3.0 mW/°C for TA > +25 °C.
T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 2 of 5
2N5114 thru 2N5116
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, nickel pla ted kovar base, nickel cap.
• TERMINALS: Gold plate ov er nic kel, kovar, solder dip ped. RoHS compliant matte/tin plating available on commercial grade only.
• MARKING: Part number, data code, manufacturer’s ID.
• WEIGHT: Approximately 0.3 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
MX 2N5114 (e3)
MQ (reference JAN)
MX (reference JANTX)
MV (reference J ANTXV)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 3 of 5
2N5114 thru 2N5116
ELECTRICAL CHARACTERISTICS @ TA = +25 oC unless otherwise noted.
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0 μA
V(BR)GSS
30
V
Drain-Source “On” State Voltage
VGS = 0 V, ID = -15 mA
VGS = 0 V, ID = -7.0 mA
VGS = 0 V, ID = -3.0 mA
2N5114
2N5115
2N5116
VDS(on)
-1.3
-0.8
-0.6
V
Gate Reverse Current
VDS = 0, VGS = 20 V
IGSS
500
pA
Drain Current Cutoff
VGS = 12 V, VDS = -15 V
VGS = 7.0 V, VDS = -15 V
V
GS
= 5.0 V, V
DS
= -15 V
2N5114
2N5115
2N5116
ID(off)
-500
-500
-500
pA
Zero Gate Voltage Drain Current
VGS = 0, VDS = -18V
VGS = 0, VDS = -15V
V
GS
= 0, V
DS
= -15V
2N5114
2N5115
2N5116
IDSS
-30
-15
-5.0
-90
-60
-25
mA
Gate-Source Cutoff
VDS = -15, ID = -1.0 nA
VDS = -15, ID = -1.0 nA
V
DS
= -15, I
D
= -1.0 nA
2N5114
2N5115
2N5116
VGS(off)
5.0
3.0
1.0
10
6.0
4.0
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = -1.0 mA
2N5114
2N5115
2N5116
rds(on)1
75
100
175
Ω
Small-Signal Drain-Source “On” State Resistance
VGS = 0, ID = 0; f = 1 kHz
2N5114
2N5115
2N5116
rds(on)2
75
100
175
Ω
Small-Signal, Common-Source Short-Circuit
Reverse Transfer Capacitance
VGS = 12 V, VDS = 0
VGS = 7.0 V, VDS = 0
VGS = 5.0 V, VDS = 0
2N5114
2N5115
2N5116
Crss
7.0
pF
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = -15 V, f = 1.0 MHz 2N5114, 2N5115
2N5116
Ciss
25
27
pF
T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 4 of 5
2N5114 thru 2N5116
ELECTRICAL CHARACTERISTICS @ TA = +25 oC unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Delay Time
2N5114
2N5115
2N5116
Td(on)
6
10
25
η
s
Rise Time
2N5114
2N5115
2N5116
tr
10
20
35
η
s
Turn-Off Delay Time
2N5114
2N5115
2N5116
Td(off) 6
8
20
η
s
T4-LDS-0006, Rev. 2 (111983) ©2011 Microsemi Corporation Page 5 of 5
2N5114 thru 2N5116
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inc h es.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.0 00 inc h (1.37 +0. 03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device
may be measured by direct methods or by the gauge and gauging procedure shown in the lower figure.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontro lled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = source, lead 2 = gate, lead 3 = drain.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
6
LD
.016
.021
0.41
0.53
7,8
LL
.500
.750
12.70
19.05
7,8
LU
.016
.019
0.41
0.48
7,8
L1
.050
1.27
7,8
L2
.250
6.35
7,8
Q
.030
0.76
5
TL
.028
.048
0.71
1.22
3,4
TW
.036
.046
0.91
1.17
r
.010
0.25
10
α
45° TP
45° TP
6
1, 2, 9, 11, 12