PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET POUtCrOn v<v:025, 3301 ELECTRONICS WAY, WEST PALM BEACH, FLORIDA 33407 TEL: (407) 848-4311 FAX: (407) 863-5946 POOV . PsA 0 . 10 Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS SDF 250 JAA Drain-source Volt.(1i) vosSS 200 Vdc SDF250 JAB | [fatraarat [wor [oe Gate-Source Voltage VGS 20 Vde Cont FEATURES Brain Current Continuous eee (Te = 25C) ID 25 Adc RUGGED PACKAGE Drain Current Pulsed(3) 10M 120 A @ HI-REL CONSTRUCTION Total Power Dissipotion PD 150 W @ CERAMIC EYELETS Power Dissipation 1.2 w/e @ LEAD BENDING OPTIONS Derating > 25C . @ COPPER CORED 52 ALLOY PINS Operating & Storage Temp. | TJ/Tsig -55 TO +150 C @ LOW IR LOSSES Therma! Resistance RthJe 0.8 C/W @ LOW THERMAL RESISTANCE Max.Lead temperature TL 300 C @ OPTIONAL MIL-S-19500 ELECTRICAL CHARACTERISTICS Te =25C UNLESS OTHER- WISE SPECIFIED SCREENING SCHEMATIC (B) [TERMINAL CONNECTIONS G H h- 1] GATE 1 | DRAIN | 2|o0RAIN | 2] SOURCE (S) }3]source [3] GATE STANDARD BEND CONF I GURAT IONS JAA a S a D re 1 2 (CUSTOM BEND OPTIONS AVAILABLE) STANDARD SEND CONF IGURAT IONS J AB (CUSTOM BEND OPTIONS AVAILABLE) PARAMETER SYMBOL TEST CONDITIONS MIN] TYP.| MAX ,JUNITS Orain-source VGS=OV Breakdown Volt |(8%)055 1D=250 A 200} - ~ Vv Gote Thresholdlccry)| yps= =250 2.0 4.0| V Voltage DS=VGS 1D=250HA [2.0] - [4. Gate Source - ~ Leakage IGSS |VGS=420 V |100] nA Zero Gote VDS=MAX.RATING voS=0| - | - [250/ HA Voltage Drain {pss = Correa yosrg.= wax eazeN | - | oooh wn Static Orain- Source On-State|/RDS(ON VGS=10 Vv ~ - jo.10) Resistance(1) (ON) ID=16A Forword Trans- VDS 2 50 V Conductance (2) gfs IDS=16A 13] - - |S) Input Capacitance! CISS - {2600} - pF Output Capacitance! COSS oS OV HO Vv ~ |650| - | pF R Transt =i. z Seseedfoneet | oRSS = [150 [= [oF Turn-On Delay |td(on)|ypp=100V RG=6.2a -~ | - | 30 | ns Rise Time tr | De25A t RO-3.98 - ~ 1180] ns Turn-OTt BeTaylracor ty] MOET, sei tehing, ines |T-Tog Dns Foll Time tf dent of operating temp. _ _ 120] ns Total Gate Charge Gate-Source Plus| Qg 55] - [115] nc Gate-Drain) VGS=10V, ID=2SA Gate-Source VDS=0.8 MAX.RATING Charge gs (Gate charge is essenti- 10 |} - 21 | nc - ' Q y tnoependen a e Com tee Qgd operating temperature) 30 _ 60 nc Charge SOURCE -DRAIN DIODE RATINGS & CHARACT . Te = 25C ( UNLESS OTHER- WISE SPECIFIED PARAMETER SYMBOL TEST CONDITIONS MIN.| TYP.|]MAX. |UNITS Continuous te: Source Current] IS MO tore -}|- 125] A (Body Diode) Symbo! showing e integrol reverse Pulse Source P-N junction recti- Current (Body | ISM Ifier (See schematic)} - | - |100] A Diode) (1) Diode Forward IF=25A, VGS=OV _ _ Voltage (2) VSD Te=+25C 2.0] V Reverse =4+950 - Recovery Time | tPh |[Tc=*25 C - 950 | ns Reverse Re- Q di7ate 100A/ S - |3.8| - covery Charge re ' - M . HC Ai2 REV. 10/93 TJ = 1 2} 3) Repetitive Rat 25C to 150C. Pulse test: Pulse Width <300uS, Duty Cycle <2%. Pulse Width limited By Max.junction Temperature. ing: