tm
©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
September 2008
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC40 A
Collector Current @ TC = 100oC20 A
ICM (1) Pulsed Collector Current @ TC = 25oC 60 A
PDMaximum Power Dissipation @ TC = 25oC165 W
Maximum Power Dissipation @ TC = 100oC66 W
TJ Operating Junction Temperature -55 to +150 oC
Tstg Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.76 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 2.51 oC/W
RθJA Thermal Resistance, Junction to Ambient - 40 oC/W
G
E
C
ECG
COLLECTOR
(FLANGE)
FGH20N60SFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.2V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
2www.fairchildsemi.com
FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Packaging
Type Qty per Tube
Max Qty
per Box
FGH20N60SFD FGH20N60SFDTU TO-247 Tube 30ea -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
∆BVCES
∆TJ
Te mperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250µA-0.6-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V -2.22.8V
IC = 20A, VGE = 15V,
TC = 125oC-2.4- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 940 - pF
Coes Output Capacitance - 110 - pF
Cres Reverse Transfer Capacitance - 40 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
-13-ns
trRise Time - 16 - ns
td(off) Turn-Off Delay Time - 90 - ns
tfFall Time - 24 48 ns
Eon Turn-On Switching Loss - 0.37 - mJ
Eoff Turn-Off Switching Loss - 0.16 - mJ
Ets Total Switching Loss - 0.53 - mJ
td(on) Turn-On Delay Time
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
-12-ns
trRise Time - 16 - ns
td(off) Turn-Off Delay Time - 95 - ns
tfFall Ti me - 28 - ns
Eon Turn-On Switching Loss - 0.4 - mJ
Eoff Turn-Off Switching Loss - 0.28 - mJ
Ets Total Switching Loss - 0.69 - mJ
QgTotal Gate Charge VCE = 400V, IC = 20A,
VGE = 15V
-65-nC
Qge Gate to Emitter Charge - 7 - nC
Qgc Gate to Collector Charge - 33 - nC
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FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 10A TC = 25oC- 1.9 2.5V
TC = 125oC- 1.7 -
trr Diode Reverse Recovery Time
IES =10A, dIES/dt = 200A/µs
TC = 25oC- 34 - ns
TC = 125oC- 57 -
Qrr Diode Reverse Recovery Charge TC = 25oC- 41 - nC
TC = 125oC- 96 -
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FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0.01.53.04.56.0
0
20
40
60 20V
TC = 25oC
15V 12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 0.01.53.04.56.0
0
20
40
60
20V
TC = 125oC
15V
12V
10V
VGE = 8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
012345
0
20
40
60
Comm on E m itter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V] 4681012
0
20
40
60 Commo n Emitt e r
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125
1
2
3
4
40A
20A
IC = 10A
Comm on E mitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Case Temperature, TC [oC] 0 4 8 121620
0
4
8
12
16
20
IC = 10A
20A
40A
Comm on Emitter
TC = -40oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter V o ltage , V GE [V]
5www.fairchildsemi.com
FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
0 4 8 121620
0
4
8
12
16
20
IC = 10A
20A
40A
Comm on Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itter V o ltage , V GE [V] 0 4 8 121620
0
4
8
12
16
20
40A
IC = 10A
20A
Comm on E m itter
TC = 125oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
0.1 1 10
0
500
1000
1500
2000
2500 Comm on E mitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V] 30 020406080
0
3
6
9
12
15 Comm on Emitter
TC = 25oC
300V
200V
VCC = 100V
Gate-Emi tter Voltage, VGE [V]
Ga te Cha r g e , Qg [nC]
1 10 100 1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse TC = 25 oC
Curves m ust be derated
linearly with increase
in temperatur e
1ms
10 ms
DC
10µs
100µs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V] 0 102030405060
5
10
100
Common Emitter
VCC = 400V, V GE = 15V
IC = 20A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
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FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0 102030405060
10
100
1000 C o mm o n Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
0 10203040
3
10
100
200 Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A ]
0 10203040
10
100
300 Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Colle c to r Curren t, IC [A]
0 102030405060
0.1
1
3Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
1 10 100 1000
1
10
80
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0 10203040
0.02
0.1
1
10 Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC Eon
Eoff
Switching Loss [mJ]
Colle c to r C urren t, IC [A]
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FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23.Transient Thermal Impedance of IGBT
0 100 200 300 400 500 600
1E-3
0.01
0.1
1
10
100
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Current , IR [µA]
Reverse Voltage, VR [V]
01234
0.1
1
10
40
TJ = 75oC
TJ = 25oC
TJ = 125oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0 5 10 15 20
10
20
30
40
50
60
200A/µs
di/dt = 100A/µs
Stored Recovery Charge, Qrr [nC]
Forwa rd C u rre n t, IF [A] 0 5 10 15 20
10
20
30
40
50
60
200A/µs
di/dt = 100 A/µs
Reverse Recovery Time, trr [ns]
Forward Current, IF [A]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
D uty Fact or, D = t1/t2
Peak Tj = Pdm x Zth jc + TC
0.5
t1
PDM
t2
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FGH20N60SFD Rev. A
FGH20N60SFD 600V, 20A Field Stop IGBT
Mechanical Dimensions
TO247AB (FKS PKG CODE 001)
FGH20N60SFD 600V, 20A Field Stop IGBT
FGH20N60SFD Rev. A www.fairchildsemi.com9
Rev. I35
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