DATA SH EET
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
1995 Sep 04
DISCRETE SEMICONDUCTORS
BFS17W
NPN 1 GHz wideband transistor
1995 Sep 04 2
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
Marking code: E1
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage −−25 V
VCEO collector-emitter voltage −−15 V
ICDC collector current −−50 mA
Ptot total power dissipation up to Ts=118°C; note 1 −−300 mW
hFE DC current gain IC= 2 mA; VCE = 1 V 25 90 −
fTtransition frequency IC= 25 mA; VCE =5V −1.6 −GHz
Cccollector capacitance IE= 0; VCB = 10 V; f = 1 MHz −0.8 1.5 pF
Cre feedback capacitance IC= 1 mA; VCE =5V; f=1MHz −0.75 −pF
Tjjunction temperature −−175 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −25 V
VCEO collector-emitter voltage open base −15 V
VEBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −50 mA
Ptot total power dissipation Ts=118°C; note 1 −300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −175 °C
1995 Sep 04 3
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj=25°C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts=118°C; note 1 190 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =10V −−10 nA
hFE DC current gain IC= 2 mA; VCE =1V 25 90 −
f
Ttransition frequency IC= 25 mA; VCE =5V;
f = 500 MHz −1.6 −GHz
Cccollector capacitance IE=i
e= 0; VCB =10V;
f=1MHz −0.8 1.5 pF
Ceemitter capacitance IC=i
c= 0; VEB = 0.5 V;
f=1MHz −2−pF
Cre feedback capacitance IB=i
b= 0; VCE =5V;
f = 1 MHz; Tamb =25°C−0.75 −pF
F noise figure IC= 2 mA; VCE =5V;
f = 500 MHz; ΓS=Γopt
−4.5 −dB
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
200
0
MLB587
150T ( C)
o
s
Ptot
(mW)
300
400
100
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =1V.
handbook, halfpage
60
20
40
MBG237
0 110
h
FE
IC (mA)
10−1102
1995 Sep 04 4
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IB=i
b= 0; f = 1 MHz.
handbook, halfpage
0
2
010
MBG238
24
1.5
1
0.5
68
C
re
(pF)
VCB (V)
Fig.5 Transition frequency as a function
of collector current; typical values.
Tamb =25°C; f = 500 MHz.
handbook, halfpage
2
1.5
1
MBG239
2.5
10
1
5 V
VCE = 10 V
fT
(GHz)
IC (mA) 102
Fig.6 Minimum noise figure as function of
frequency; typical values.
VCE =10V.
handbook, halfpage
MBG240
F
(dB)
f (MHz)
20
15
10
5
0103
102
10−310−210−1101
1995 Sep 04 5
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
PACKAGE OUTLINE
Dimensions in mm.
Fig.7 SOT323.
handbook, full pagewidth
0.3
0.1
0.25
0.10
0.2
0.1
max
1.00
max
MBC871
1.4
1.2
2.2
1.8 B
A
1.35
1.15
0.4
0.2
B
M
0.2
A
M
0.2
2.2
2.0
3
2
1
1995 Sep 04 6
Philips Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
