NP1500SCMCT3G - ON Semiconductor

December, 2010 − Rev. 2

1Publication Order Number:

NP0640SAMC/D

NPMC Series

Ultra Low Capacitance

TSPD

The NPMC series of Low Capacitance Thyristor Surge Protection

Devices (TSPD) protect sensitive electronic equipment from transient

overvoltage conditions. Due to their ultra low off−state capacitance

(Co), they offer minimal signal distortion for high speed equipment

such as DSL and T1/E1 circuits. The low nominal offstate capacitance

translates into the extremely low differential capacitance offering

superb linearity with applied voltage or frequency.

The NPMC Series helps designers to comply with the various

regulatory standards and recommendations including:

GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,

TIA−968−A, FCC Part 68, EN 60950, UL 1950.

Features

•Ultra Low − Micro Capacitance

•Low Leakage (Transparent)

•High Surge Current Capabilities

•Precise Turn on Voltages

•Low Voltage Overshoot

•These are Pb−Free Devices

Typical Applications

•xDSL Central Office and Customer Premise

•T1/E1

•Other Broadband High Speed Data Transmission Equipment

ELECTRICAL PARAMETERS

Device

VDRM V(BO) VTIDRM I(BO) ITIH

V V V AmA A mA

NP0640SxMCT3G 58 77 4 5 800 2.2 150

NP0720SxMCT3G 65 88 4 5 800 2.2 150

NP0900SxMCT3G 75 98 4 5 800 2.2 150

NP1100SxMCT3G 90 130 4 5 800 2.2 150

NP1300SxMCT3G 120 160 4 5 800 2.2 150

NP1500SxMCT3G 140 180 4 5 800 2.2 150

NP1800SxMCT3G 170 220 4 5 800 2.2 150

NP2100SxMCT3G 180 240 4 5 800 2.2 150

NP2300SxMCT3G 190 260 4 5 800 2.2 150

NP2600SxMCT3G 220 300 4 5 800 2.2 150

NP3100SxMCT3G 275 350 4 5 800 2.2 150

NP3500SxMCT3G 320 400 4 5 800 2.2 150

G = indicates leadfree, RoHS compliant

* Recognized Components

ULTRA LOW CAPACITANCE

BIDIRECTIONAL SURFACE

MOUNT THYRISTOR

64 − 350 VOLTS

SMB

JEDEC DO−214AA

CASE 403C

A = Assembly Location

Y = Year

WW = Work Week

xxxx = Specific Device Code

(NPxxx0SxMC)

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

AYWW

xxxxMG

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Device Package Shipping†

ORDERING INFORMATION

NPxxx0SxMCT3G SMB

(Pb−Free)

2500 Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NPMC Series

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TEL−COM STANDARDS

Specification

Waveform x = series ratings

Unit

Voltage s) Current s) A B C

GR−1089−CORE 2x10 2x10 150 250 500 A(pk)

TIA−968−A 10x160 10x160 90 150 200

GR−1089−CORE 10x360 10x360 75 125 175

TIA−968−A 10x560 10x560 50 100 150

ITU−T K.20/21 10x700 5x310 75 100 200

GR−1089−CORE 10x1000 10x1000 50 80 100

SURGE RATINGS

Characteristics Symbol A B C Unit

Nominal Pulse

Surge Short Circuit Current Non – Repetitive

Double Exponential Decay Waveform (Notes 1, 2 and 3)

2 x 10 mSec

8 x 20 mSec

10 x 160 mSec

10 x 360 mSec

10 x 560 mSec

10 x 700 mSec

10 x 1000 mSec

IPPS1

IPPS2

IPPS3

IPPS4

IPPS5

IPPS6

IPPS7

150

250

150

125

100

500

400

200

150

200

100

A(pk)

1. Allow cooling before testing second polarity.

2. Measured under pulse conditions to reduce heating.

3. Nominal values may not represent the maximum capability of a device.

CAPACITANCE

Characteristics Symbol

Max

Unit

A B C

(f=1.0 MHz, 1.0 Vrms, 2 Vdc bias)

(Co Apx 45% @ 50 V) NP0640SxMCT3G

NP0720SxMCT3G

NP0900SxMCT3G

NP1100SxMCT3G

NP1300SxMCT3G

NP1500SxMCT3G

NP1800SxMCT3G

NP2100SxMCT3G

NP2300SxMCT3G

NP2600SxMCT3G

NP3100SxMCT3G

NP3500SxMCT3G

Co23

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol Rating Value Unit

VDRM Repetitive peak off−state voltage: Rated maximum

(peak) continuous voltage that may be applied in the

off−state conditions including all dc and repetitive

alternating voltage components.

(Stresses exceeding Maximum Ratings may damage

the device. Maximum Ratings are stress ratings only.

Functional operation above the Recommended

Operating Conditions is not implied. Extended

exposure to stresses above the Recommended

Operating Conditions may affect device reliability.)

NP0640SxMCT3G ±58 V

NP0720SxMCT3G ±65

NP0900SxMCT3G ±75

NP1100SxMCT3G ±90

NP1300SxMCT3G ±120

NP1500SxMCT3G ±140

NP1800SxMCT3G ±170

NP2100SxMCT3G ±180

NP2300SxMCT3G ±190

NP2600SxMCT3G ±220

NP3100SxMCT3G ±275

NP3500SxMCT3G ±320

NPMC Series

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ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)

Symbol Rating Min Typ Max Unit

V(BO) Breakover voltage: The maximum voltage across the device in or at the

breakdown region. (Note 4)

VDC = 1000 V, dv/dt = 100 V/ms

NP0640SxMCT3G ±77 V

NP0720SxMCT3G ±88

NP0900SxMCT3G ±98

NP1100SxMCT3G ±130

NP1300SxMCT3G ±160

NP1500SxMCT3G ±180

NP1800SxMCT3G ±220

NP2100SxMCT3G ±240

NP2300SxMCT3G ±260

NP2600SxMCT3G ±300

NP3100SxMCT3G ±350

NP3500SxMCT3G ±400

I(BO) Breakover Current: The instantaneous current flowing at the breakover voltage. 800 mA

IHHolding Current: Minimum current required to maintain the device in the on−state. (Notes 5, 6) 150 mA

IDRM Off−state Current: The dc value of current that results from the applica-

tion of the off−state voltage

VD = 50 V 2mA

VD = VDRM 5

VTOn−state Voltage: The voltage across the device in the on−state condition.

IT = 2.2 A (pk), PW = 300 ms, DC = 2%

4 V

di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device

can withstand without damage.

±500 A/ms

4. Electrical parameters are based on pulsed test methods.

5. Measured under pulsed conditions to reduce heating

6. Allow cooling before testing second polarity.

THERMAL CHARACTERISTICS

Symbol Rating Value Unit

TSTG Storage Temperature Range −65 to +150 °C

TJJunction Temperature −40 to +150 °C

R0JA Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”

Fan out in a 3x3 inch pattern, 2 oz copper track.

90 °C/W

NPMC Series

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ELECTRICAL PARAMETER/RATINGS DEFINITIONS

Symbol Parameter

VDRM Repetitive Peak Off−state Voltage

V(BO) Breakover Voltage

IDRM Off−state Current

I(BO) Breakover Current

IHHolding Current

VTOn−state Voltage

ITOn−state Current

ITSM Nonrepetitive Peak On−state Current

IPPS Nonrepetitive Peak Impulse Current

VDOff−state Voltage

IDOff−state Current

Figure 1. Voltage Current Characteristics of TSPD

IPPS

ITSM

−Voltage +Voltage

−I

I(BO)

IDRM

V(BO)

VDRM

Off−State Region

On−State Region

TIME (ms)

Ipp − PEAK PULSE CURRENT − %Ipp

100

tr = rise time to peak value

tf = decay time to half value

trtf

Peak

Value

Half Value

100

0.1 1 10 100 1000

Figure 2. Nonrepetitive On−State Current vs. Time

(ITSM)

Figure 3. Nonrepetitive On−State Impulse vs.

Waveform (IPPS)

CURRENT DURATION (s)

PEAK ON−STATE CURRENT

Figure 4. Capacitance vs. Off−State Voltage

VOLTAGE (V)

CAPACITANCE (pF)

0102030 605040

+125°C

−40 to +25°C

NPMC Series

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Detailed Operating Description

The TSPD or Thyristor Surge Protection Device are

specialized silicon based overvoltage protectors, used to

protect sensitive electronic circuits from damaging

overvoltage transient surges caused by induced lightning

and powercross conditions.

The TSPD protects by switching to a low on state voltage

when the specified protection voltage is exceeded. This is

known as a “crowbar” effect. When an overvoltage occurs,

the crowbar device changes from a high−impedance to a

low−impedance state. This low−impedance state then offers

a path to ground, shunting unwanted surges away from the

sensitive circuits.

This crowbar action defines the TSPD’s two states of

functionality: Open Circuit and Short Circuit.

Open Circuit – The TSPD must remain transparent during

normal circuit operation. The device looks like an open

across the two wire line.

Short Circuit – When a transient surge fault exceeds the

TSPD protection voltage threshold, the devices switches on,

and shorts the transient to ground, safely protecting the

circuit.

Figure 5. Normal and Fault Conditions

Protected

Equipment

−

V(OP)

I(OP)

TSPD

Normal Circuit Operation

Protected

Equipment

−

V(Fault)

I(Fault)

TSPD

Operation during a Fault

I(Fault)

•TSPD looks like an open

•Circuit operates normally

•Fault voltage greater than Vbo occurs

•TSPD shorts fault to ground

•After short duration events the O/V

switches back to an open condition

•Worst case (Fail/Safe)

•O/V permanent short

•Equipment protected

The electrical characteristics of the TSPD help the user to

define the protection threshold for the circuit. During the

open circuit condition the device must remain transparent;

this is defined by the IDRM. The IDRM should be as low as

possible. The typical value is less than 5 mA.

The circuit operating voltage and protection voltage must

be understood and considered during circuit design. The

V(BO) is the guaranteed maximum voltage that the protected

circuit will see, this is also known as the protection voltage.

The VDRM is the guaranteed maximum voltage that will

keep the TSPD in its normal open circuit state. The TSPD

V(BO) is typically a 20−30% higher than the VDRM. Based

on these characteristics it is critical to choose devices which

have a VDRM higher than the normal circuit operating

voltage, and a V(BO) which is less than the failure threshold

of the protected equipment circuit. A low on−state voltage

Vt allows the TSPD to conduct large amounts of surge

current (500 A) in a small package size.

Once a transient surge has passed and the operating

voltage and currents have dropped to their normal level the

TSPD changes back to its open circuit state.

Normal System

Operating Voltage

Equipment Failure Threshold

Time

Transient Surge

TSPD Protection

(short)

Figure 6. Protection During a Transient Surge

TSPD Transparent

(open)

TSPD Transparent

(open)

Volts

TSPD Protection Voltage

Upper Limit

TSPD’s are useful in helping designers meet safety and

regulatory standards in Telecom equipment including

GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC

Part 68, UL1950, and EN 60950.

ON Semiconductor offers a full range of these products in

the NP series product line.

DEVICE SELECTION

When selecting a TSPD use the following key selection

parameters.

Off−State Voltage VDRM

Choose a TSPD that has an Off−State Voltage greater than

the normal system operating voltage. The protector should

not operate under these conditions:

Example:

Vbat = 48 Vmax

Vring = 150 Vrms = 150*1.414 = 212 V peak

VDRM should be greater than the peak value of these two

components:

VDRM > 212 + 48 = 260 VDRM

Breakover Voltage V(BO)

Verify that the TSPD Breakover Voltage is a value less

than the peak voltage rating of the circuit it is protecting.

Example: Relay breakdown voltage, SLIC maximum

voltage, or coupling capacitor maximum rated voltage.

Peak Pulse Current Ipps

Choose a Peak Pulse current value which will exceed the

anticipated surge currents in testing. In some cases the 100 A

“C” series device may be needed when little or no series

resistance is used. When a series current limiter is used in the

circuit a lower current level of “A” or “B” may be used. To

determine the peak current divide the maximum surge

current by the series resistance.

Hold Current (IH)

The Hold Current must be greater than the maximum

system generated current. If it is not then the TSPD will

remain in a shorted condition, even after a transient event

has passed.

NPMC Series

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TYPICAL APPLICATIONS

Figure 7. ADSL

Tip

Ring

Voice

NP3100SCMC

DSL

Figure 8. T1/E1

POWERTX

NP0640SCMC

NP1800SCMC

NP0640SCMC

NP1800SCMC

NP0640SCMC

NPMC Series

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN

DIMENSION P.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.160 0.180 4.06 4.57

B0.130 0.150 3.30 3.81

C0.075 0.095 1.90 2.41

D0.077 0.083 1.96 2.11

H0.0020 0.0060 0.051 0.152

J0.006 0.012 0.15 0.30

K0.030 0.050 0.76 1.27

P0.020 REF 0.51 REF

S0.205 0.220 5.21 5.59

SMB

CASE 403C−01

ISSUE A

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ǒmm

inchesǓ

SCALE 8:1

2.743

0.108

2.159

0.085

2.261

0.089

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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Phone: 81−3−5773−3850

NP0640SAMC/D

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