© 2011 IXYS All rights reserved 1 - 2
20110114a
DSA 9
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
typ. max.
IRVR = VRRM TVJ = TVJM 3 mA
VFIF = 36 A TVJ = 25°C 1.4 V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
15
V
mW
RthJC
RthJH
DC current
180° sine
DC current
2
2.17
3.0
K/W
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
2.0
2.0
100
mm
mm
m/s2
Data according to IEC 60747
VRRM = 1200-1800 V
IF(RMS) = 18 A
IFAVM = 11 A
Avalanche Diode
Features
• International standard package
JEDEC DO-203 AA
• Planar passivated chips
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature & power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
IFRMS
IFAVM
TVJ = TVJM
TC = 150°C; 180° sine
18
11
A
A
PRSM TVJM, tp = 10 ms 4.5 kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
250
265
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
220
A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
310
295
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
190
A2s
TVJ
TVJM
Tstg
-40...+180
180
-40...+180
°C
°C
°C
Mdmounting torque 2.2...2.8 Nm
Weight typical 5 g
A C DO-203 AA
A = Anode, C = Cathode
C
A
VRSM
V
V(BR)min
V
VRRM
V
Type
1300 1300 1200 DSA 9-12F
1700 1750 1600 DSA 9-16F
1900 1950 1800 DSA 9-18F
7.8
10.3
2.3
0.5
SW 11 19.711.5
0.5
10.5
4 2
0.8
max. 2
4.4
2.6
Ø 2
M5
4
Dimensions in mm (1 mm = 0.0394")
© 2011 IXYS All rights reserved 2 - 2
20110114a
DSA 9
IXYS reserves the right to change limits, test conditions and dimensions.
10-3 10-2 10-1 100101
0
50
100
150
200
250
300
2 3 4 5 6 7 8 91 10
200
400
600
800
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10
20
30
40
50
0 5 10 15 20
0
5
10
15
20
25
0 50 100 150 200
0
10-3 10-2 10-1 100101102103104
0
1
2
3
4
5
I2t
IFSM
A
IF
A
VFt
s
t
ms
PF
W
IF(AV)M
A
Tamb
°C
t
s
ZthJH
K/W
A2s
0 50 100 150 200 250
0
5
10
15
20
25
IF(AV)M
Tc
A
°C
V
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
RthJH for various conduction angles d:
d RthJH (K/W)
DC 3.0
180°3.35
120°3.56
60°4.0
30°4.64
Constants for ZthJH calculation:
i Rthi (K/W) ti (s)
1 0.095 0.00032
2 0.515 0.0102
3 1.39 0.360
4 1.0 2.30
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
typ. lim.
TVJ= 180°C
TVJ= 25°C
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 180°C
VR = 0 V
TVJ=45°C
TVJ=180°C
DC
d = 180° sin
d = 120°
d = 60°
d = 30°
30°
60°
120°
180°
DC
RthJA :
8.3 K/W
13 K/W
(CU80x80)
18 K/W
DC
180° sin
120°
60°
30°
ase