2MBI150UB-120 IGBT Module U-Series 1200V / 150A 2 in one-package Equivalent Circuit Schematic Applications Features * High speed switching * Inverter for Motor drive * Voltage drive * Low inductance module structure * AC and DC Servo drive amplifier * Uninterruptible power supply E2 C1 * Industrial machines, such as Welding machines C2E1 G1 E1 Maximum ratings and characteristics G2 E2 Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Conditions Symbol VCES VGES IC Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C ICp Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 -IC -IC pulse PC Tj Tstg Viso 1 device AC:1min. Rating 1200 20 200 150 400 300 150 300 780 +150 -40 to +125 2500 3.5 3.5 Unit V V A W C VAC N*m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=150A VGE=15V RG=4.7 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C IF=150A Characteristics Min. Typ. - - - - 4.5 6.5 - 1.90 - 2.15 - 1.75 - 2.00 - 17 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.75 - 1.85 - 1.60 - 1.70 - - - 0.97 Max. 2.0 400 8.5 2.25 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.05 - 1.90 - 0.35 - Unit Characteristics Min. Typ. - - - - - 0.025 Max. 0.16 0.24 - mA nA V V nF s V s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit C/W C/W C/W IGBT Module 2MBI150UB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 400 400 VGE=20V 15V 12V VGE=20V 15V Collector current : Ic [A] Collector current : Ic [A] 12V 300 300 200 10V 100 200 10V 100 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 Collector current vs. Collector-Emitter voltage (typ.) 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 400 T j=25C Collector - Emitter voltage : VCE [ V ] 10 300 Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] T j=125C 200 100 0 8 6 4 Ic=300A Ic=150A Ic=75A 2 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1M Hz, Tj= 25C Vcc=600V, Ic=150A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 300 600 Gate charge : Qg [ nC ] http://store.iiic.cc/ 900 IGBT Module 2MBI150UB-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=4.7, Tj= 25C Vcc=600V, VGE=15V, Rg=4.7, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 10 0 100 200 0 300 Collector current : Ic [ A ] 300 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 25C Vcc=600V, VGE=15V, Rg=4.7 30 ton toff 1000 tr 100 tf Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 200 Collector current : Ic [ A ] 10000 Eoff(125C) Eon(125C) 25 20 Eoff(25C) Eon(25C) 15 10 Err(125C) 5 10 Err(25C) 0 1.0 10.0 100.0 0 100 200 300 Collector current : Ic [ A ] Gate resistance : Rg [ ] Reverse bias safe operating area (max.) Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=15V, Tj= 125C +VGE=15V,-VGE <= 15V, RG >= 4.7 ,Tj <= 125C 400 150 Eon 100 50 Eoff Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 100 300 200 100 Err 0 0 1.0 10.0 100.0 Gate resistance : Rg [ ] 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ IGBT Module 2MBI150UB-120 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=15V, Rg=4.7 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 Tj=25C 300 Tj=125C 200 100 100 10 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 0 100 200 Forward current : IF [ A ] Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [ C/W ] trr (125C) Irr (125C) Irr (25C) trr (25C) 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M233 http://store.iiic.cc/ 300