650nm Index-Guided Red Laser Diode
Description
The SLD1133VL-53 is an index-guided red laser
diode designed for DVD systems. For bar code
scanners, its wavelength (650nm Typ.) is 20nm shorter
than that of the current device.
Features
•Small astigmatism (7µm typ.)
•Low operating current (60mA typ.)
•Small package (φ5.6mm)
•Single longitudinal mode
Applications
•DVD
•Bar code scanner
Structure
•AlGaInP quantum well structure laser diode
•PIN photo diode for optical power output monitor
Recommended Optical Power Output
5mW
Absolute Maximum Ratings (Tc = 25°C)
•Optical power output Po 7 mW
•Reverse voltage VRLD 2 V
PD 15 V
•Operating temperature Topr –10 to +70 °C
•Storage temperature Tstg –40 to +85 °C
– 1 – E98213C92-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD1133VL-53
M-274
Pin Configuration
3
LD
1
2
PD
Common
21
3
Bottom View
1. LD Anode
2. PD Anode
3. Common
Connection Diagram
For the availability of this product, please contact the sales office.
– 2 –
SLD1133VL-53
Electrical and Optical Characteristics (Tc: Case temperature, Tc = 25°C)
Item
Threshold current
Operating current
Operating voltage
Wavelength
Radiation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Monitor current
Ith
Iop
Vop
λ
θ⊥
θ//
∆X, ∆Y, ∆Z
∆φ//
∆φ⊥
ηD
As
Imon
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW
Po = 5mW, VR= 5V
640
24
7
0.15
0.08
50
60
2.3
650
30
8
0.4
7
0.1
65
70
2.8
660
40
10
±80
±2
±3
0.7
15
0.25
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
Symbol Conditions Min. Typ. Max. Unit
Perpendicular
Parallel
Position
Angle
Handling Precautions
(1) Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 4W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS
use safety goggles that block infrared rays.
Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
Safety goggles for
protection from laser beam
IR fluorescent plate
Optical
material
Lens
Laser diode
Optical board
Optical power output control device
Temperature control device
(2) Prevention of surge current and electrostatic discharge
Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light
emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that
the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser
diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by
a human body. Be great careful about excess current and electrostatic discharge.
– 3 –
SLD1133VL-53
Example of Representative Characteristics
IF – Forward current [mA]
Imon – Monitor current [mA]
Po – Optical output [mW]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
Angle [degree]
Relative radiant intensity
Far field pattern (FFP)
Tc – Case temperature [°C]
Monitor current vs. Temperature characteristics
Tc – Case temperature [°C]
Ith – Threshold current [mA]
Threshold current vs. Temperature characteristics
100600
0 0.2
4020–20 0 60
0.2
lmon-Monitor current [mA]
0
25°C
20 40 80
TC = 0°C 50°C
Imon
PO = 5mW
0.1
0
4020–20 0 60
200
100
10
1
2
3
4
5
6
7
70°C25°CTC = 0°C 50°C 70°C
200–60 –40 –20 40 60
θ⊥
θ//
Po = 5mW
Tc = 25°C
80 80
– 4 –
SLD1133VL-53
645 650 655 660 665
Tc = 0°C
Tc = 25°C
Tc = 50°C
Tc = 70°C
Po = 5mW
Relative radiant intensity
Temperature dependence of spectrum
λ – Wavelength [nm]
– 5 –
SLD1133VL-53
645 650 655 660 665
Po = 1mW
Po = 3mW
Po = 5mW
Po = 7mW
Tc = 25°C
λ – Wavelength [nm]
Relative radiant intensity
Power output dependence of spectrum
– 6 –
SLD1133VL-53
Package Outline Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
Reference
Slot 1.0
0.5
90°
0.4
φ5.6 – 0.025
0
φ4.4 MAX
φ3.7 MAX
φ1.0 MIN
0.5 MIN
Window Glass
Reference
Plane
LD Chip
& Photo
Diode
0.25
2.6 MAX
∗1.26
1.2 ± 0.1
6.5
2 3 1
3 – φ0.45
PCD φ2.0
∗Optical
Distance = 1.35 ± 0.08
1
23
M-274 PACKAGE WEIGHT 0.3g
M-274
