SILICON POWER MOS FET NE5500234 4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Die are manufactured using our NEWMOS technology (our 0.6 m WSi gate lateral MOS FET), housed in a surface mount 3-pin power Minimold (34 PKG) (SOT-89 type) package. The device can deliver 32.5 dBm output power with 50% power added efficiency at 1.9 GHz with 4.8 V supply voltage. FEATURES * High output power : Pout = 32.5 dBm TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm) * High power added efficiency : add = 50% TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm) * High linear gain : GL = 11 dB TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz) * Surface mount package : 3-pin power Minimold (34 PKG) (SOT-89 type) * Single supply : VDS = 3.0 to 6.0 V APPLICATIONS <R> <R> * Digital cellular phones : DCS1800/PCS1900 handsets * Handheld transceiver : FRS (Family Radio Service), GMRS (General Mobile Radio Service) * Others : General purpose amplifiers for various applications ORDERING INFORMATION Part Number NE5500234 Order Number NE5500234-AZ Package Marking 3-pin power minimold V2 (SOT-89, Our code: 34) Supplying Form * Magazine case * Qty 25 pcs/case (Pb-Free : External solder plating) NE5500234-T1 NE5500234-T1-AZ 3-pin power minimold (SOT-89, Our code: 34) (Pb-Free : External * 12 mm wide embossed taping * Source pin face the perforation side of the tape * Qty 1 kpcs/reel solder plating) Remarks 1. To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5500234-AZ 2. This product is containing Pb-material inside. Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10405EJ02V0DS (2nd edition) Date Published August 2007 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NE5500234 ABSOLUTE MAXIMUM RATINGS (T A = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 20 V Gate to Source Voltage VGS 6.0 V ID 1.0 A Total Power Dissipation Ptot 10 W Channel Temperature Tch 125 C Storage Temperature Tstg 65 to +125 C Test Conditions MIN. TYP. MAX. Unit Drain Current RECOMMENDED OPERATING CONDITIONS Parameter Symbol Drain to Source Voltage VDS 3.0 4.8 6.0 V Gate to Source Voltage VGS 0 2.0 3.5 V Drain Current ID Duty Cycle 50%, Ton 1 s 0.75 1.0 A Input Power Pin f = 1.9 GHz, VDS = 4.8 V 27 dBm MIN. TYP. MAX. Unit ELECTRICAL CHARACTERISTICS (T A = +25C, unless otherwise specified, using our standard test fixture.) Parameter Symbol Test Conditions Gate to Source Leakage Current IGSO VGS = 6.0 V 100 nA Drain to Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS = 8.5 V 100 nA Gate Threshold Voltage Vth VDS = 4.8 V, IDS = 1 mA 1.0 1.4 2.0 V Thermal Resistance Rth Channel to Case 10 C/W Transconductance gm VDS = 4.8 V, IDS = 500 mA 840 mS IDSS = 10 A 20 24 V 31.5 32.5 dBm 610 mA 43 50 % 11.0 dB Drain to Source Breakdown Voltage Output Power Drain Current Power Added Efficiency Linear Gain Note BVDSS Pout ID add f = 1.9 GHz, VDS = 4.8 V, Pin = 25 dBm, IDset = 400 mA (RF OFF) GL Note Pin = 10 dBm DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 Data Sheet PU10405EJ02V0DS NE5500234 <R> TYPICAL CHARACTERISTICS (T A = +25C) Remark The graphs indicate nominal characteristics. Data Sheet PU10405EJ02V0DS 3 NE5500234 Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10405EJ02V0DS NE5500234 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) Data Sheet PU10405EJ02V0DS 5 NE5500234 <R> RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Partial Heating Caution 6 Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Do not use different soldering methods together (except for partial heating). Data Sheet PU10405EJ02V0DS IR260 WS260 HS350