2007. 4. 6 1/2
SEMICONDUCTOR
TECHNICAL DATA
PG15FBUSC
Single Line TVS Diode for ESD
Protection in Portable Electronics
Revision No : 0
Protection in Portable Electronics Applications.
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects on I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Peak Pulse Power (tp=8/20 s) PPK 350 W
Peak Pulse Current (tp=8/20 s) IPP 12 A
Operating Temperature Tj-55 150
Storage Temperature Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Stand-Off Voltage VRWM - - - 15 V
Reverse Breakdown Voltage VBR It=1mA 16.7 - - V
Reverse Leakage Current IRVRWM=15V - - 1 A
Clamping Voltage VCIPP=12A, tp=8/20 s - - 29 V
Junction Capacitance CJVR=0V, f=1MHz - - 75 pF