STx42N65M5 N-channel 650 V, 0.070 , 33 A MDmeshTM V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Features Type VDSS @ TJmax RDS(on) max ID STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 710 V 710 V 710 V 710 V 710 V < 0.079 < 0.079 < 0.079 < 0.079 < 0.079 33 A 33 A (1) 33 A 33 A 33 A TO-220FP TO-220 worldwide best RDS(on) Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested 3 1 2 1. Limited only by maximum temperature allowed 3 3 1 1 TO-220 DPAK 3 12 2 3 1 IPAK Figure 1. 2 TO-247 Internal schematic diagram $ Application Switching applications ' Description MDmeshTM V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. Table 1. Device summary 3 !-V Order codes Marking Package Packaging STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 42N65M5 42N65M5 42N65M5 42N65M5 42N65M5 DPAK TO-220FP IPAK TO-220 TO-247 Tape and reel Tube Tube Tube Tube June 2009 Doc ID 15317 Rev 3 1/18 www.st.com 18 Contents STx42N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 Doc ID 15317 Rev 3 STx42N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, TO-247 DPAK, IPAK VGS ID ID IDM (2) PTOT Gate- source voltage Unit TO-220FP 25 Drain current (continuous) at TC = 25 C 33 Drain current (continuous) at TC = 100 C 33 20.8 Drain current (pulsed) 132 Total dissipation at TC = 25 C 190 V (1) A 20.8 (1) A 132 (1) A 40 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 11 A EAS Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V) 950 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Tstg Storage temperature Tj -- 2500 V -55 to 150 C 150 C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 33 A, di/dt 400 A/s, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionambient max -- Rthj-pcb Thermal resistance junction-pcb max 30 Tl Maximum lead temperature for soldering purpose 0.66 Doc ID 15317 Rev 3 62.5 -- -300 3.1 C/W 50 62.5 C/W -- -- C/W C 3/18 Electrical characteristics 2 STx42N65M5 Electrical characteristics (TC = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C 1 100 A A IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.070 0.079 Min. Typ. Max. Unit VGS = 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 16.5 A Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 4650 110 3.2 - pF pF pF Co(er)(1) Equivalent output capacitance energy related VGS = 0, VDS = 0 to 80% V(BR)DSS - 100 - pF Co(tr)(2) Equivalent output capacitance time related VGS = 0, VDS = 0 to 80% V(BR)DSS - 285 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.1 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 16.5 A, VGS = 10 V (see Figure 20) - 100 26 38 - nC nC nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/18 Doc ID 15317 Rev 3 STx42N65M5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM - 61 24 65 13 Max Unit - ns ns ns ns Source drain diode Parameter IRRM Typ. VDD = 400 V, ID = 20 A, RG = 4.7 , VGS = 10 V (see Figure 19) Symbol trr Qrr Min. Test conditions Min. Typ. Max. Unit - 33 132 A A ISD = 33 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/s VDD = 100 V (see Figure 24) - 400 7 35 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 24) - 532 10 38 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Doc ID 15317 Rev 3 5/18 Electrical characteristics STx42N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, DPAK, IPAK Figure 3. Thermal impedance for TO-220, DPAK, IPAK Figure 5. Thermal impedance for TO-247 Figure 7. Thermal impedance for TO-220FP AM01565v1 ID (A) D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 100 10 10s 100s 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-247 AM03246v1 ID (A) on ) 10s D S( O Li per m at ite io d ni by n m this ax a R rea is 100 10 100s 1ms 10ms 1 0.1 0.1 Figure 6. 1 10 100 Safe operating area for TO-220FP AM01566v1 ID (A) 100 VDS(V) is ea ar (on) S t RD in ax n io y m t ra d b pe O mite Li s hi 10 10s 100s 1ms 1 10ms 0.1 0.01 0.1 6/18 1 10 100 VDS(V) Doc ID 15317 Rev 3 STx42N65M5 Figure 8. Electrical characteristics Output characteristics Figure 9. AM01589v1 ID (A) 80 VGS=10V Transfer characteristics AM01590v1 ID (A) 80 8V 70 7.5V 60 70 VDS=20V 60 50 7V 50 40 40 30 30 6.5V 20 10 6V 0 0 20 10 0 5 10 VDS(V) 15 3 4 5 7 6 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM01569v1 VGS (V) VGS 10 VDS VDS (V) 500 400 8 VDD=520V VGS=10V ID=16.5A 6 100 40 60 80 0 100 120 Qg(nC) Figure 12. Capacitance variations 0.068 0.066 0.064 0 10 20 30 ID(A) Figure 13. Output capacitance stored energy AM01570v1 C (pF) 0.074 0.070 2 20 VGS=10V 0.072 4 0 0.076 300 200 0 AM01568v1 RDS(on) () 10000 AM03231v1 Eoss (J) 16 Ciss 1000 14 12 10 100 Coss 8 6 10 4 Crss 1 1 10 100 VDS(V) Doc ID 15317 Rev 3 2 0 0 100 200 300 400 500 600 VDS(V) 7/18 Electrical characteristics STx42N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM01571v1 VGS(th) (norm) 1.1 Figure 15. Normalized on resistance vs temperature AM01573v1 RDS(on) (norm) ID = 16.5 A VGS= 10 V 2.0 ID = 250 A 1.0 1.5 0.9 1.0 0.8 0.5 0.7 0.6 -50 0 50 Figure 16. Source-drain diode forward characteristics 0 50 100 TJ(C) Figure 17. Normalized BVDSS vs temperature AM01574v1 VSD (V) 1.0 0 -50 TJ(C) 100 TJ=-25C AM01572v1 BVDSS (norm) 0.9 1.05 0.8 0.7 0.6 1.00 TJ=25C 0.5 ID = 1 mA TJ=150C 0.95 0.4 0.3 0.2 0 5 10 15 20 25 30 ISD(A) 0.90 -50 Figure 18. Switching losses vs gate resistance (1) E (J) 600 500 AM01575v1 ID=20A VDD=400V L=50H Eon 400 300 Eoff 200 100 0 0 5 10 15 20 25 30 35 40 45 RG() 1. Eon including reverse recovery of a SiC diode 8/18 Doc ID 15317 Rev 3 0 50 100 TJ(C) STx42N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15317 Rev 3 10% AM01473v1 9/18 Package mechanical data 4 STx42N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/18 Doc ID 15317 Rev 3 STx42N65M5 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 15317 Rev 3 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STx42N65M5 TO-247 mechanical data Dim. mm. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 e 15.75 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 oP 3.55 3.65 oR 4.50 5.50 S 12/18 Typ. 5.50 Doc ID 15317 Rev 3 STx42N65M5 Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J Doc ID 15317 Rev 3 13/18 Package mechanical data STx42N65M5 IPAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/18 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 15317 Rev 3 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STx42N65M5 Package mechanical data DPAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8 0 0.4 0 Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M Doc ID 15317 Rev 3 15/18 Packaging mechanical data 5 STx42N65M5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. 16/18 mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 1.574 0.933 0.956 Doc ID 15317 Rev 3 MAX. MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STx42N65M5 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 16-Jan-2009 1 First release 15-May-2009 2 Updated figures 9, 10, 11 and 17 12-Jun-2009 3 Figure 15 has been updated Doc ID 15317 Rev 3 17/18 STx42N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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