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DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

Max RDS(ON)

Max ID

@ TA = 25°C

-30V

1Ω @ VGS = -4.5V

-0.67A

1.5Ω @ VGS = -2.5V

-0.54A

2Ω @ VGS = -1.8V

-0.47A

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

 Load Switch in Portable Electronics

Features and Benefits

 Low Gate Threshold Voltage

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish –Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.009 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP31D0U-7

SOT23

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year

2011

~

2016

2017

2018

2019

2020

2021

2022

2023

Code

Y

~

D

E

F

G

H

I

J

K

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT23

Equivalent Circuit

Top View

Internal Schematic

Top View

D

GS

P3U = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

P3U

YM

D

S

G

Gate Protection

Diode

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

2 of 7

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April 2016

DMP31D0U

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±8

V

Continuous Drain Current

Steady

State

TA = +25°C (Note 6)

TA = +85°C (Note 6)

TA = +25°C (Note 5)

ID

-0.67

-0.48

-0.53

A

Pulsed Drain Current (Note 7)

IDM

2.5

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

0.45

W

(Note 6)

0.71

W

Thermal Resistance, Junction to Ambient

(Note 5)

RθJA

275

°C/W

(Note 6)

177

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

0.001 0.01 0.1 1 10 100 1,000

T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

0

10

20

30

40

50

60

70

80

90

100

P(pk), PEAK TRANSIENT POWER (W)

Single Pulse

Rthja = 176C/W

Rthja(t) = Rthja*r(t)

T - T = P*Rthja (t)

JA

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t)*R

R = 176C/W

Duty Cycle, D = t1/t2





JA JA

JA

t1, PULSE DURATION TIME (sec)

Fig. 2 Transient Thermal Resistance

0.001

0.01

0.1

1

R(t), TRANSIENT THERMAL RESISITANCE

r(t) @ D=Single Pulse

r(t) @ D=0.005

r(t) @ D=0.01

r(t) @ D=0.05

r(t) @ D=0.1

r(t) @ D=0.3

r(t) @ D=0.5

r(t) @ D=0.7

r(t) @ D=0.9

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = 25°C

IDSS

—

-1

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±3

μA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-0.5

—

-1.1

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)

—

1

Ω

VGS = -4.5V, ID = -400mA

1.5

VGS = -2.5V, ID = -200mA

2

VGS = -1.8V, ID = -100mA

Forward Transfer Admittance

|YFS|

50

—

mS

VDS = -3V, ID = -300mA

Diode Forward Voltage

VSD

—

-1.2

V

VGS = 0V, IS = -300mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

76

150

pF

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

9

—

pF

Reverse Transfer Capacitance

CRSS

—

6.43

—

pF

Gate Resistance

RG

—

167

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

QG

—

0.9

—

nC

VGS = -4.5V, VDS = -15V, ID = -1A

Total Gate Charge

QG

—

1.5

—

nC

VGS = -8V, VDS = -15V,

ID = -1A

Gate-Source Charge

QGS

—

0.1

—

nC

Gate-Drain Charge

QGD

—

0.2

—

nC

Turn-On Delay Time

tD(ON)

—

5.0

—

ns

VDD = -10V, RL = 10Ω

VGS = -4.5V, RG = 6Ω

Turn-On Rise Time

tR

—

5.9

—

ns

Turn-Off Delay Time

tD(OFF)

—

35.7

—

ns

Turn-Off Fall Time

tF

—

16.7

—

ns

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Typical Electrical Characteristics

0

0.2

0.4

0.6

0.8

1.0

0 1 2 3 4 5

-V , DRAIN -SOURCE VOLTAGE (V)

Fig. 3 Typical Output Characteristics

DS

-I , DRAIN CURRENT (A)

D

V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

V = 1.5V

GS

V = 1.2V

GS

0

0.2

0.4

0.6

0.8

1.0

0 0.5 1.0 1.5 2.0

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristics

-I , DRAIN CURRENT (A)

D

T = 150 C

A

T = 125 C

A

T = 85 C

A

T = 25 C

A

T = -55 C

A

V = -5.0V

DS

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 0.2 0.4 0.6 0.8 1.0

-I , DRAIN SOURCE CURRENT (A)

Fig. 5 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R ,DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

-V , GATE SOURCE VOLTAGE(V)

Gate Voltage

GS

Fig. 6 Typical On-Resistance vs.

Drain Current and

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 2 4 6 8

R ,DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 0.2 0.4 0.6 0.8 1.0

-I , DRAIN SOURCE CURRENT (A)

Fig. 7 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE( )

DS(ON) 

T = -55 C

A

T = 25 C

A

T = 85 C

A

T = 125 C

A

T = 150 C

A

V = -4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 8 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 9 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on) 

V = -4.5V

I = A

GS

D

-500m

V = 5V

I = A

GS

D

-2.

-250m

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Fig. 10 Gate Threshold Variation vs. Ambient Temperature

A

V , GATE THRESHOLD VOLTAGE(V)

GS(TH)

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

0

0.2

0.4

0.6

0.8

1.0

0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 11 Diode Forward Voltage vs. Current

SD

-I , SOURCE CURRENT (A)

S

0

20

40

60

80

100

120

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 12 Typical Junction Capacitance

DS

C , JUNCTION CAPACITANCE (pF)

T

Coss

Crss

Ciss

f = 1MHz

0.1

1

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 13 Typical Drain-Source Leakage Current vs. Voltage

DS

-I , LEAKAGE CURRENT (nA)

DSS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

0

2

4

6

8

0 0.4 0.8 1.2 1.6 2.0

Q , TOTAL GATE CHARGE (nC)

Fig. 14 Gate-Charge Characteristics

g

-V , GATE-SOURCE VOLTAGE (V)

GS

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

J

K1 K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

CB

D

G

F

a

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110

a

0°

8°

–

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

X

Y

Y1 C

X1

Dimensions

Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

DMP31D0U

Datasheet number: DS35754 Rev. 2 - 2

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DMP31D0U

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

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